Luca Banszerus
Luca Banszerus
Niels Bohr Institute, University of Copenhagen
Verified email at - Homepage
Cited by
Cited by
Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper
L Banszerus, M Schmitz, S Engels, J Dauber, M Oellers, F Haupt, ...
Science advances 1 (6), e1500222, 2015
Raman spectroscopy as probe of nanometre-scale strain variations in graphene
C Neumann, S Reichardt, P Venezuela, M Drögeler, L Banszerus, ...
Nature communications 6 (1), 8429, 2015
Production and processing of graphene and related materials
C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ...
2D Materials 7 (2), 022001, 2020
Ballistic transport exceeding 28 μm in CVD grown graphene
L Banszerus, M Schmitz, S Engels, M Goldsche, K Watanabe, T Taniguchi, ...
Nano letters 16 (2), 1387-1391, 2016
Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices
M Drögeler, C Franzen, F Volmer, T Pohlmann, L Banszerus, M Wolter, ...
Nano letters 16 (6), 3533-3539, 2016
Out-of-plane heat transfer in van der Waals stacks through electron–hyperbolic phonon coupling
KJ Tielrooij, NCH Hesp, A Principi, MB Lundeberg, EAA Pogna, ...
Nature nanotechnology 13 (1), 41-46, 2018
Identifying suitable substrates for high-quality graphene-based heterostructures
L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ...
2D Materials 4 (2), 025030, 2017
Gate-defined electron-hole double dots in bilayer graphene
L Banszerus, B Frohn, A Epping, D Neumaier, K Watanabe, T Taniguchi, ...
arXiv preprint arXiv:1803.10857, 2018
Single-electron double quantum dots in bilayer graphene
L Banszerus, S Möller, E Icking, K Watanabe, T Taniguchi, C Volk, ...
Nano letters 20 (3), 2005-2011, 2020
Hot-carrier cooling in high-quality graphene is intrinsically limited by optical phonons
EAA Pogna, X Jia, A Principi, A Block, L Banszerus, J Zhang, X Liu, ...
ACS nano 15 (7), 11285-11295, 2021
High mobility dry-transferred CVD bilayer graphene
M Schmitz, S Engels, L Banszerus, K Watanabe, T Taniguchi, C Stampfer, ...
Applied Physics Letters 110 (26), 2017
Electron–hole crossover in gate-controlled bilayer graphene quantum dots
L Banszerus, A Rothstein, T Fabian, S Moller, E Icking, S Trellenkamp, ...
Nano letters 20 (10), 7709-7715, 2020
Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport
L Banszerus, B Frohn, T Fabian, S Somanchi, A Epping, M Müller, ...
Physical review letters 124 (17), 177701, 2020
Graphene Field-Effect Transistors With High Extrinsic and
M Bonmann, M Asad, X Yang, A Generalov, A Vorobiev, L Banszerus, ...
IEEE Electron Device Letters 40 (1), 131-134, 2018
Spin-valley coupling in single-electron bilayer graphene quantum dots
L Banszerus, S Möller, C Steiner, E Icking, S Trellenkamp, F Lentz, ...
Nature communications 12 (1), 5250, 2021
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ...
arXiv preprint arXiv:1909.09523, 2019
Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
E Icking, L Banszerus, F Wörtche, F Volmer, P Schmidt, C Steiner, ...
Advanced Electronic Materials 8 (11), 2200510, 2022
Spin relaxation in a single-electron graphene quantum dot
L Banszerus, K Hecker, S Möller, E Icking, K Watanabe, T Taniguchi, ...
Nature communications 13 (1), 3637, 2022
Quantum transport through MoS2 constrictions defined by photodoping
A Epping, L Banszerus, J Güttinger, L Krückeberg, K Watanabe, ...
Journal of Physics: Condensed Matter 30 (20), 205001, 2018
Encapsulated graphene‐based Hall sensors on foil with increased sensitivity
Z Wang, L Banszerus, M Otto, K Watanabe, T Taniguchi, C Stampfer, ...
physica status solidi (b) 253 (12), 2316-2320, 2016
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