| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4, 786-799, 2021 | 312 | 2021 |
| Insulators for 2D nanoelectronics: the gap to bridge YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ... Nature Communications 11, 3385, 2020 | 267 | 2020 |
| The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ... 2D materials 3, 035004, 2016 | 191 | 2016 |
| Long-term stability and reliability of black phosphorus field-effect transistors YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ... ACS nano 10 (10), 9543-9549, 2016 | 170 | 2016 |
| Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... Nature Electronics 2 (6), 230-235, 2019 | 161 | 2019 |
| The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ... Nature Electronics 4 (2), 98-108, 2021 | 158 | 2021 |
| Improved Hysteresis and Reliability of MoS2 Transistors with High-Quality CVD Growth and Al2O3 Encapsulation YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser IEEE Electron Device Letters, 2017 | 92 | 2017 |
| Engineering field effect transistors with 2D semiconducting channels: Status and prospects X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza Advanced Functional Materials 30 (18), 1901971, 2020 | 74 | 2020 |
| Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ... ACS nano 12 (6), 5368-5375, 2018 | 55 | 2018 |
| Highly-stable black phosphorus field-effect transistors with low density of oxide traps YY Illarionov, M Waltl, G Rzepa, T Knobloch, JS Kim, D Akinwande, ... npj 2D Materials and Applications 1 (1), 23, 2017 | 55 | 2017 |
| A Physical Model for the Hysteresis in MoS2 Transistors T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ... IEEE Journal of the Electron Devices Society 6, 972-978, 2018 | 53 | 2018 |
| Energetic mapping of oxide traps in MoS2 field-effect transistors YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ... 2D Materials 4 (2), 025108, 2017 | 53 | 2017 |
| Bias-temperature Instability in Single-layer Graphene Field-effect Transistors Y Illarionov, M Waltl, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, ... Applied Physics Letters 105 (14), 143507, 2014 | 51 | 2014 |
| Dielectric Properties of Ultrathin CaF2 Ionic Crystals C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ... Advanced Materials, 2002525, 2020 | 45 | 2020 |
| Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ... 2D Materials 6 (4), 045004, 2019 | 35 | 2019 |
| Hot-carrier degradation and bias-temperature instability in single-layer graphene field-effect transistors: Similarities and differences Y Illarionov, A Smith, S Vaziri, M Ostling, T Mueller, M Lemme, T Grasser IEEE Transactions on electron devices 62 (11), 3876-3881, 2015 | 31 | 2015 |
| Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ... Nature Electronics 5 (6), 356-366, 2022 | 27 | 2022 |
| Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ... IEEE Transactions on Electron Devices 66 (1), 232-240, 2018 | 27 | 2018 |
| Electrical and optical characterization of Au/CaF2/p-Si(111) tunnel-injection diodes YY Illarionov, MI Vexler, SM Suturin, VV Fedorov, NS Sokolov Journal of applied Physics, 2014 | 26 | 2014 |
| A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures MI Vexler, SE Tyaginov, YY Illarionov, YK Sing, AD Shenp, VV Fedorov Semiconductors 47 (5), 686-694, 2013 | 25 | 2013 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEVerified email at iue.tuwien.ac.at
