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Xiankun Zhang (张先坤)
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Poly (4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode
X Zhang, Q Liao, S Liu, Z Kang, Z Zhang, J Du, F Li, S Zhang, J Xiao, ...
Nature communications 8, 15881, 2017
2112017
Interfacial Charge Behavior Modulation in Perovskite Quantum Dot‐Monolayer MoS2 0D‐2D Mixed‐Dimensional van der Waals Heterostructures
H Wu, Z Kang, Z Zhang, Z Zhang, H Si, Q Liao, S Zhang, J Wu, X Zhang, ...
Advanced Functional Materials 28 (34), 1802015, 2018
1332018
Manganese‐Based Materials for Rechargeable Batteries beyond Lithium‐Ion
H Li, W Zhang, K Sun, J Guo, K Yuan, J Fu, T Zhang, X Zhang, H Long, ...
Advanced Energy Materials 11, 2100867, 2021
1242021
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
X Zhang, B Liu, L Gao, H Yu, X Liu, J Du, J Xiao, Y Liu, L Gu, Q Liao, ...
Nature Communications 12 (1), 1522, 2021
1212021
Defect‐Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters
L Gao, Q Liao, X Zhang, X Liu, L Gu, B Liu, J Du, Y Ou, J Xiao, Z Kang, ...
Advanced Materials 32 (2), 1906646, 2020
1142020
Integrated High-Performance Infrared Phototransistor Arrays Composed of Nonlayered PbS–MoS2 Heterostructures with Edge Contacts
Y Wen, L Yin, P He, Z Wang, XK Zhang, Q Wang, TA Shifa, K Xu, F Wang, ...
Nano letters 16 (10), 6437-6444, 2016
1082016
Strain-engineered van der Waals interfaces of mixed-dimensional heterostructure arrays
B Liu, Q Liao, X Zhang, J Du, Y Ou, J Xiao, Z Kang, Z Zhang, Y Zhang
ACS nano 13 (8), 9057-9066, 2019
1032019
Piezotronic effect on interfacial charge modulation in mixed-dimensional van der Waals heterostructure for ultrasensitive flexible photodetectors
J Du, Q Liao, M Hong, B Liu, X Zhang, H Yu, J Xiao, L Gao, F Gao, Z Kang, ...
Nano Energy 58, 85-93, 2019
732019
Self-healing originated van der Waals homojunctions with strong interlayer coupling for high-performance photodiodes
X Zhang, Q Liao, Z Kang, B Liu, Y Ou, J Du, J Xiao, L Gao, H Shan, Y Luo, ...
ACS nano 13 (3), 3280-3291, 2019
732019
Hidden Vacancy Benefit in Monolayer 2D Semiconductors
X Zhang, Q Liao, Z Kang, B Liu, X Liu, Y Ou, J Xiao, J Du, Y Liu, L Gao, ...
Advanced Materials 33 (7), 2007051, 2021
702021
Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates
F Li, J Qi, M Xu, J Xiao, Y Xu, X Zhang, S Liu, Y Zhang
Small 13 (14), 1603103, 2017
702017
All‐van‐der‐Waals Barrier‐Free Contacts for High‐Mobility Transistors
X Zhang, H Yu, W Tang, X Wei, L Gao, M Hong, Q Liao, Z Kang, Z Zhang, ...
Advanced Materials 34 (34), 2109521, 2022
542022
Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure
J Wen, W Tang, Z Kang, Q Liao, M Hong, J Du, X Zhang, H Yu, H Si, ...
Advanced Science 8, 2101417, 2021
502021
Atomic‐Thin ZnO Sheet for Visible‐Blind Ultraviolet Photodetection
H Yu, Q Liao, Z Kang, Z Wang, B Liu, X Zhang, J Du, Y Ou, M Hong, ...
Small 16 (47), 2005520, 2020
492020
Strain modulation on graphene/ZnO nanowire mixed-dimensional van der Waals heterostructure for high-performance photosensor
S Liu, Q Liao, Z Zhang, X Zhang, S Lu, L Zhou, M Hong, Z Kang, Y Zhang
Nano Research 10, 3476-3485, 2017
432017
Gate‐controlled polarity‐reversible photodiodes with ambipolar 2D semiconductors
J Du, Q Liao, B Liu, X Zhang, H Yu, Y Ou, J Xiao, Z Kang, H Si, Z Zhang, ...
Advanced Functional Materials 31 (8), 2007559, 2021
402021
Single-Atom Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides
X Zhang, L Gao, H Yu, Q Liao, Z Kang, Z Zhang, Y Zhang
Accounts of Materials Research 2 (8), 655-668, 2021
382021
Reconstructing vanadium oxide with anisotropic pathways for a durable and fast aqueous K-ion battery
G Liang, Z Gan, X Wang, X Jin, B Xiong, X Zhang, S Chen, Y Wang, H He, ...
ACS nano 15 (11), 17717-17728, 2021
352021
Molecule‐Upgraded van der Waals Contacts for Schottky‐Barrier‐Free Electronics
X Zhang, Z Kang, L Gao, B Liu, H Yu, Q Liao, Z Zhang, Y Zhang
Advanced Materials 33 (45), 2104935, 2021
332021
Tuning Transport and Photoelectric Performance of Monolayer MoS2 Device by E‐Beam Irradiation
F Li, F Gao, M Xu, X Liu, X Zhang, H Wu, J Qi
Advanced Materials Interfaces 5 (14), 1800348, 2018
262018
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