Changqing Chen
Changqing Chen
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Luminescence from stacking faults in gallium nitride
R Liu, A Bell, FA Ponce, CQ Chen, JW Yang, MA Khan
Applied Physics Letters 86 (2), 021908, 2005
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ...
Applied physics letters 80 (19), 3542-3544, 2002
Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
A Chitnis, C Chen, V Adivarahan, M Shatalov, E Kuokstis, V Mandavilli, ...
Applied Physics Letters 84 (18), 3663-3665, 2004
AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
HM Wang, JP Zhang, CQ Chen, Q Fareed, JW Yang, MA Khan
Applied physics letters 81 (4), 604-606, 2002
Anisotropic structural characteristics of GaN templates and coalesced epitaxial lateral overgrown films deposited on sapphire
H Wang, C Chen, Z Gong, J Zhang, M Gaevski, M Su, J Yang, MA Khan
Applied physics letters 84 (4), 499-501, 2004
Pulsed atomic-layer epitaxy of ultrahigh-quality structures for deep ultraviolet emissions below 230 nm
JP Zhang, MA Khan, WH Sun, HM Wang, CQ Chen, Q Fareed, E Kuokstis, ...
Applied Physics Letters 81 (23), 4392-4394, 2002
Polarization effects in photoluminescence of - and -plane GaN/AlGaN multiple quantum wells
E Kuokstis, CQ Chen, ME Gaevski, WH Sun, JW Yang, G Simin, ...
Applied Physics Letters 81 (22), 4130-4132, 2002
Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells
C Chen, V Adivarahan, J Yang, M Shatalov, E Kuokstis, MA Khan
Japanese journal of applied physics 42 (9A), L1039, 2003
Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array
H Hu, B Tang, H Wan, H Sun, S Zhou, J Dai, C Chen, S Liu, LJ Guo
Nano Energy 69, 104427, 2020
AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
CQ Chen, JP Zhang, V Adivarahan, A Koudymov, H Fatima, G Simin, ...
Applied physics letters 82 (25), 4593-4595, 2003
GaN homoepitaxy on freestanding oriented GaN substrates
CQ Chen, ME Gaevski, WH Sun, E Kuokstis, JP Zhang, RSQ Fareed, ...
Applied physics letters 81 (17), 3194-3196, 2002
Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate
H Sun, S Mitra, RC Subedi, Y Zhang, W Guo, J Ye, MK Shakfa, TK Ng, ...
Advanced Functional Materials 29 (48), 1905445, 2019
AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
X Hu, J Deng, N Pala, R Gaska, MS Shur, CQ Chen, J Yang, G Simin, ...
Applied Physics Letters 82 (8), 1299-1301, 2003
High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement
W Zhang, J Xu, W Ye, Y Li, Z Qi, J Dai, Z Wu, C Chen, J Yin, J Li, H Jiang, ...
Applied Physics Letters 106 (2), 021112, 2015
High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes
JP Zhang, HM Wang, WH Sun, V Adivarahan, S Wu, A Chitnis, CQ Chen, ...
Journal of electronic materials 32 (5), 364-370, 2003
Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells
MA Khan, V Adivarahan, JP Zhang, C Chen, E Kuokstis, A Chitnis, ...
Japanese Journal of Applied Physics 40 (12A), L1308, 2001
A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire
C Chen, J Zhang, J Yang, V Adivarahan, S Rai, S Wu, H Wang, W Sun, ...
Japanese journal of applied physics 42 (7B), L818, 2003
Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN
R Gaska, C Chen, J Yang, E Kuokstis, A Khan, G Tamulaitis, I Yilmaz, ...
Applied physics letters 81 (24), 4658-4660, 2002
AlGaN layers grown on GaN using strain-relief interlayers
CQ Chen, JP Zhang, ME Gaevski, HM Wang, WH Sun, RSQ Fareed, ...
Applied physics letters 81 (26), 4961-4963, 2002
Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire
C Chen, J Yang, H Wang, J Zhang, V Adivarahan, M Gaevski, E Kuokstis, ...
Japanese journal of applied physics 42 (6B), L640, 2003
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