| Molecular beam epitaxy: from research to mass production Newnes, 2012 | 277* | 2012 |
| Growth of high Bi concentration GaAs1− xBix by molecular beam epitaxy RB Lewis, M Masnadi-Shirazi, T Tiedje Applied Physics Letters 101 (8), 2012 | 196 | 2012 |
| Nanoplasmonic terahertz photoconductive switch on GaAs B Heshmat, H Pahlevaninezhad, Y Pang, M Masnadi-Shirazi, ... Nano letters 12 (12), 6255-6259, 2012 | 123 | 2012 |
| Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8% M Masnadi-Shirazi, RB Lewis, V Bahrami-Yekta, T Tiedje, M Chicoine, ... Journal of Applied Physics 116 (22), 2014 | 75 | 2014 |
| Nanoplasmonics enhanced terahertz sources A Jooshesh, L Smith, M Masnadi-Shirazi, V Bahrami-Yekta, T Tiedje, ... Optics express 22 (23), 27992-28001, 2014 | 73 | 2014 |
| Temperature dependence of hole mobility in GaAs1− xBix alloys DA Beaton, RB Lewis, M Masnadi-Shirazi, T Tiedje journal of applied physics 108 (8), 2010 | 67 | 2010 |
| Surface reconstructions during growth of GaAs1− xBix alloys by molecular beam epitaxy M Masnadi-Shirazi, DA Beaton, RB Lewis, X Lu, T Tiedje Journal of crystal growth 338 (1), 80-84, 2012 | 62 | 2012 |
| Deep level defects in n-type GaAsBi and GaAs grown at low temperatures PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ... Journal of Applied Physics 113 (13), 2013 | 53 | 2013 |
| Significant performance improvement of a terahertz photoconductive antenna using a hybrid structure M Bashirpour, S Ghorbani, M Kolahdouz, M Neshat, M Masnadi-Shirazi, ... RSC advances 7 (83), 53010-53017, 2017 | 38 | 2017 |
| MBE growth optimization for GaAs1− xBix and dependence of photoluminescence on growth temperature V Bahrami-Yekta, T Tiedje, M Masnadi-Shirazi Semiconductor Science and Technology 30 (9), 094007, 2015 | 32 | 2015 |
| Ultrathin solar cells with Ag meta-material nanostructure for light absorption enhancement J Poursafar, M Bashirpour, M Kolahdouz, AV Takaloo, M Masnadi-Shirazi, ... Solar Energy 166, 98-102, 2018 | 29 | 2018 |
| Enhanced Terahertz Bandwidth and Power from GaAsBi‐based Sources B Heshmat, M Masnadi‐Shirazi, RB Lewis, J Zhang, T Tiedje, R Gordon, ... Advanced Optical Materials 1 (10), 714-719, 2013 | 25 | 2013 |
| Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films P Wu, T Tiedje, H Alimohammadi, V Bahrami-Yekta, M Masnadi-Shirazi, ... Semiconductor Science and Technology 31 (10), 10LT01, 2016 | 20 | 2016 |
| Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy M Beaudoin, RB Lewis, JJ Andrews, V Bahrami-Yekta, M Masnadi-Shirazi, ... Journal of Crystal Growth 425, 245-249, 2015 | 16 | 2015 |
| Fabrication of ionic polymer-metal composite actuators with durable and quality-enhanced sputtered electrodes M Hasani, A Alaei, MSS Mousavi, E Esmaeili, M Kolahdouz, VF Naeini, ... Journal of Micromechanics and Microengineering 29 (8), 085008, 2019 | 13 | 2019 |
| Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures PM Mooney, MC Tarun, V Bahrami-Yekta, T Tiedje, RB Lewis, ... Semiconductor Science and Technology 31 (6), 065007, 2016 | 12 | 2016 |
| Array of vertically aligned Al-doped ZnO nanorods: Fabrication process and field emission performance M Advand, M Kolahdouz, A Rostami, M Masnadi-Shirazi, M Norouzi, ... Thin Solid Films 656, 6-13, 2018 | 10 | 2018 |
| Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties Z Batool, S Chatterjee, A Chernikov, A Duzik, R Fritz, C Gogineni, K Hild, ... Molecular Beam Epitaxy, 139-158, 2013 | 10 | 2013 |
| Effect of CH3NH3I/CH3NH3Br precursors on the structural and surface morphology properties of the electrodeposited methylammonium lead–mixed halide … Z Heydari, H Abdy, MP Ghaziani, M Kolahdouz, E Asl-Soleimani, ... Journal of Solid State Electrochemistry 25, 583-590, 2021 | 8 | 2021 |
| Molecular Beam Epitaxy Z Batool, S Chatterjee, A Chernikov, A Duzik, R Fritz, C Gogineni, K Hild, ... Elsevier, 2013 | 8 | 2013 |
