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Joe McGlone
Joe McGlone
Research Scientist, ECE and IMR at Ohio State University
Verified email at osu.edu - Homepage
Title
Cited by
Cited by
Year
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
3032017
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
1522019
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
1242019
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
1002020
Trapping Effects in Si 𝛿-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate
JF Mcglone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 2018
992018
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
882019
High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
Journal of Applied Physics 127 (21), 2020
812020
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 2018
702018
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...
APL Materials 8 (2), 2020
642020
Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3
NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ...
Applied Physics Letters 115 (15), 2019
572019
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
522020
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 2019
522019
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ...
Applied Physics Letters 117 (17), 2020
332020
APL Mater. 8, 021111 (2020)
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, A Bhuiyan, ...
15
Velocity saturation in La-doped BaSnO3 thin films
H Chandrasekar, J Cheng, T Wang, Z Xia, NG Combs, CR Freeze, ...
Applied Physics Letters 115 (9), 2019
132019
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
JF McGlone, H Ghadi, E Cornuelle, A Armstrong, G Burns, Z Feng, ...
Journal of Applied Physics 133 (4), 2023
102023
β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy
AV Dheenan, JF McGlone, NK Kalarickal, HL Huang, M Brenner, J Hwang, ...
Applied Physics Letters 121 (11), 2022
92022
Ferroelectric HfO2 Thin Films for FeFET Memory Devices
JF McGlone
Journal of the Microelectronic Engineering Conference 22 (1), 24, 2016
62016
Detailed investigation of MOCVD-grown [beta]-Ga2O3 through quantitative defect spectroscopies
H Ghadi, JF McGlone, Z Feng, AFMAU Bhuiyan, Y Zhang, H Zhao, ...
Oxide-based Materials and Devices XII 11687, 31-37, 2021
32021
Materials and device engineering for high-performance gallium oxide electronics (Conference Presentation)
S Dhara, A Dheenan, J Chandan, J McGlone, H Zhao, S Rajan
Oxide-based Materials and Devices XIV, PC124220I, 2023
22023
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