| Internal quantum efficiency in AlGaN with strong carrier localization J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska Applied Physics Letters 101 (21), 211902, 2012 | 67 | 2012 |
| Correlation between carrier localization and efficiency droop in AlGaN epilayers J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska Applied Physics Letters 103 (1), 011906, 2013 | 46 | 2013 |
| Well-width-dependent carrier lifetime in quantum wells J Mickevičius, G Tamulaitis, E Kuokštis, K Liu, MS Shur, JP Zhang, ... Applied physics letters 90 (13), 131907, 2007 | 43 | 2007 |
| Time-resolved experimental study of carrier lifetime in GaN epilayers J Mickevičius, MS Shur, RSQ Fareed, JP Zhang, R Gaska, G Tamulaitis Applied Physics Letters 87 (24), 241918, 2005 | 42 | 2005 |
| Excitation power dynamics of photoluminescence in quantum wells with enhanced carrier localization K Kazlauskas, G Tamulaitis, J Mickevičius, E Kuokštis, A Žukauskas, ... Journal of applied physics 97 (1), 013525, 2005 | 41 | 2005 |
| Exciton hopping and nonradiative decay in AlGaN epilayers K Kazlauskas, A Žukauskas, G Tamulaitis, J Mickevičius, MS Shur, ... Applied Physics Letters 87 (17), 172102, 2005 | 38 | 2005 |
| Stimulated emission in AlGaN/AlGaN quantum wells with different Al content J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ... Applied Physics Letters 100 (8), 081902, 2012 | 35 | 2012 |
| Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ... physica status solidi (c) 2 (7), 2095-2098, 2005 | 35 | 2005 |
| Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells J Mickevičius, J Jurkevičius, G Tamulaitis, MS Shur, M Shatalov, J Yang, ... Optics Express 22 (102), A491-A497, 2014 | 25 | 2014 |
| Photoluminescence efficiency droop and stimulated recombination in GaN epilayers J Mickevičius, J Jurkevičius, MS Shur, J Yang, R Gaska, G Tamulaitis Optics Express 20 (23), 25195-25200, 2012 | 25 | 2012 |
| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 24 | 2015 |
| Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ... physica status solidi (a) 202 (1), 126-130, 2005 | 23 | 2005 |
| Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ... Applied Physics Letters 86 (4), 041910, 2005 | 22 | 2005 |
| Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ... Applied Surface Science 427, 1027-1032, 2018 | 21 | 2018 |
| Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ... Journal of Physics D: Applied Physics 49 (14), 145110, 2016 | 21 | 2016 |
| Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ... Applied Physics Letters 101 (4), 041912, 2012 | 20 | 2012 |
| Fabrication of photonic structures by means of interference lithography and reactive ion etching I Mikulskas, J Mickevičius, J Vaitkus, R Tomašiūnas, V Grigaliūnas, ... Applied surface science 186 (1-4), 599-603, 2002 | 19 | 2002 |
| Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition A Kadys, T Malinauskas, T Grinys, M Dmukauskas, J Mickevičius, ... Journal of Electronic Materials 44 (1), 188-193, 2015 | 18 | 2015 |
| Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ... physica status solidi (b) 252 (5), 1138-1141, 2015 | 17 | 2015 |
| Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content A Vaitkevičius, J Mickevičius, D Dobrovolskas, Ö Tuna, C Giesen, ... Journal of Applied Physics 115 (21), 213512, 2014 | 17 | 2014 |
