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Juras Mickevicius
Juras Mickevicius
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Year
Internal quantum efficiency in AlGaN with strong carrier localization
J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska
Applied Physics Letters 101 (21), 211902, 2012
672012
Correlation between carrier localization and efficiency droop in AlGaN epilayers
J Mickevičius, G Tamulaitis, M Shur, M Shatalov, J Yang, R Gaska
Applied Physics Letters 103 (1), 011906, 2013
462013
Well-width-dependent carrier lifetime in quantum wells
J Mickevičius, G Tamulaitis, E Kuokštis, K Liu, MS Shur, JP Zhang, ...
Applied physics letters 90 (13), 131907, 2007
432007
Time-resolved experimental study of carrier lifetime in GaN epilayers
J Mickevičius, MS Shur, RSQ Fareed, JP Zhang, R Gaska, G Tamulaitis
Applied Physics Letters 87 (24), 241918, 2005
422005
Excitation power dynamics of photoluminescence in quantum wells with enhanced carrier localization
K Kazlauskas, G Tamulaitis, J Mickevičius, E Kuokštis, A Žukauskas, ...
Journal of applied physics 97 (1), 013525, 2005
412005
Exciton hopping and nonradiative decay in AlGaN epilayers
K Kazlauskas, A Žukauskas, G Tamulaitis, J Mickevičius, MS Shur, ...
Applied Physics Letters 87 (17), 172102, 2005
382005
Stimulated emission in AlGaN/AlGaN quantum wells with different Al content
J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 100 (8), 081902, 2012
352012
Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate
RS Qhalid Fareed, JP Zhang, R Gaska, G Tamulaitis, J Mickevicius, ...
physica status solidi (c) 2 (7), 2095-2098, 2005
352005
Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells
J Mickevičius, J Jurkevičius, G Tamulaitis, MS Shur, M Shatalov, J Yang, ...
Optics Express 22 (102), A491-A497, 2014
252014
Photoluminescence efficiency droop and stimulated recombination in GaN epilayers
J Mickevičius, J Jurkevičius, MS Shur, J Yang, R Gaska, G Tamulaitis
Optics Express 20 (23), 25195-25200, 2012
252012
Optical and structural properties of BGaN layers grown on different substrates
A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ...
Journal of Physics D: Applied Physics 48 (46), 465307, 2015
242015
Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, G Tamulaitis, RS Qhalid Fareed, ...
physica status solidi (a) 202 (1), 126-130, 2005
232005
Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers
J Mickevičius, R Aleksiejūnas, MS Shur, S Sakalauskas, G Tamulaitis, ...
Applied Physics Letters 86 (4), 041910, 2005
222005
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ...
Applied Surface Science 427, 1027-1032, 2018
212018
Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, ...
Journal of Physics D: Applied Physics 49 (14), 145110, 2016
212016
Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells
J Mickevičius, J Jurkevičius, K Kazlauskas, A Žukauskas, G Tamulaitis, ...
Applied Physics Letters 101 (4), 041912, 2012
202012
Fabrication of photonic structures by means of interference lithography and reactive ion etching
I Mikulskas, J Mickevičius, J Vaitkus, R Tomašiūnas, V Grigaliūnas, ...
Applied surface science 186 (1-4), 599-603, 2002
192002
Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition
A Kadys, T Malinauskas, T Grinys, M Dmukauskas, J Mickevičius, ...
Journal of Electronic Materials 44 (1), 188-193, 2015
182015
Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD
T Malinauskas, A Kadys, S Stanionytė, K Badokas, J Mickevičius, ...
physica status solidi (b) 252 (5), 1138-1141, 2015
172015
Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content
A Vaitkevičius, J Mickevičius, D Dobrovolskas, Tuna, C Giesen, ...
Journal of Applied Physics 115 (21), 213512, 2014
172014
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