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Shiheng Liang
Shiheng Liang
Hubei University
Verified email at hubu.edu.cn
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Cited by
Year
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe2/ferromagnet heterostructures
S Shi, S Liang, Z Zhu, K Cai, SD Pollard, Y Wang, J Wang, Q Wang, P He, ...
Nature nanotechnology 14 (10), 945-949, 2019
2152019
The study of interaction between graphene and metals by Raman spectroscopy
WX Wang, SH Liang, T Yu, DH Li, YB Li, XF Han
Journal of Applied Physics 109 (7), 2011
2142011
Electrical spin injection and detection in molybdenum disulfide multilayer channel
S Liang, H Yang, P Renucci, B Tao, P Laczkowski, S Mc-Murtry, G Wang, ...
Nature communications 8 (1), 14947, 2017
772017
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector
SH Liang, TT Zhang, P Barate, J Frougier, M Vidal, P Renucci, B Xu, ...
Physical Review B 90 (8), 085310, 2014
752014
Curvature-enhanced spin-orbit coupling and spinterface effect in fullerene-based spin valves
S Liang, R Geng, B Yang, W Zhao, R Chandra Subedi, X Li, X Han, ...
Scientific reports 6 (1), 19461, 2016
692016
Ferroelectric control of organic/ferromagnetic spinterface
S Liang, H Yang, H Yang, B Tao, A Djeffal, M Chshiev, W Huang, X Li, ...
Advanced Materials 28 (46), 10204-10210, 2016
622016
Spin‐Orbit Torque Magnetization Switching in MoTe2/Permalloy Heterostructures
S Liang, S Shi, CH Hsu, K Cai, Y Wang, P He, Y Wu, VM Pereira, H Yang
Advanced Materials 32 (37), 2002799, 2020
442020
MgO (001) barrier based magnetic tunnel junctions and their device applications
XF Han, SS Ali, SH Liang
Science China Physics, Mechanics and Astronomy 56, 29-60, 2013
402013
Spin orbit torque driven magnetization switching with sputtered Bi2Se3 spin current source
R Ramaswamy, T Dutta, S Liang, G Yang, MSM Saifullah, H Yang
Journal of Physics D: Applied Physics 52 (22), 224001, 2019
382019
Néel‐Type Elliptical Skyrmions in a Laterally Asymmetric Magnetic Multilayer
B Cui, D Yu, Z Shao, Y Liu, H Wu, P Nan, Z Zhu, C Wu, T Guo, P Chen, ...
Advanced Materials 33 (12), 2006924, 2021
342021
Sparse neuromorphic computing based on spin-torque diodes
J Cai, L Zhang, B Fang, W Lv, B Zhang, G Finocchio, R Xiong, S Liang, ...
Applied Physics Letters 114 (19), 192402, 2019
332019
Voltage-controlled skyrmion-based nanodevices for neuromorphic computing using a synthetic antiferromagnet
Z Yu, M Shen, Z Zeng, S Liang, Y Liu, M Chen, Z Zhang, Z Lu, L You, ...
Nanoscale Advances 2 (3), 1309-1317, 2020
322020
Tunneling magnetoresistance in Fe3Si/MgO/Fe3Si (001) magnetic tunnel junctions
LL Tao, SH Liang, DP Liu, HX Wei, J Wang, XF Han
Applied Physics Letters 104 (17), 2014
322014
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
P Barate, S Liang, TT Zhang, J Frougier, M Vidal, P Renucci, X Devaux, ...
Applied Physics Letters 105 (1), 2014
312014
Organic magnetic tunnel junctions: The role of metal-molecule interface
SH Liang, DP Liu, LL Tao, XF Han, H Guo
Physical Review B 86 (22), 224419, 2012
312012
Enhancement of ferroelectric performance in PVDF: Fe3O4 nanocomposite based organic multiferroic tunnel junctions
X Gao, S Liang, A Ferri, W Huang, D Rouxel, X Devaux, XG Li, H Yang, ...
Applied Physics Letters 116 (15), 2020
242020
Effect of interfacial structures on spin dependent tunneling in epitaxial L1-FePt/MgO/FePt perpendicular magnetic tunnel junctions
G Yang, DL Li, SG Wang, QL Ma, SH Liang, HX Wei, XF Han, T Hesjedal, ...
Journal of Applied Physics 117 (8), 2015
232015
First-principles study of MnAl for its application in MgO-based perpendicular magnetic tunnel junctions
X Zhang, LL Tao, J Zhang, SH Liang, L Jiang, XF Han
Applied Physics Letters 110 (25), 2017
222017
Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
F Cadiz, A Djeffal, D Lagarde, A Balocchi, B Tao, B Xu, S Liang, M Stoffel, ...
Nano Letters 18 (4), 2381-2386, 2018
212018
Intrinsic magnetism and biaxial strain tuning in two-dimensional metal halides V 3 X 8 (X= F, Cl, Br, I) from first principles and Monte Carlo simulation
H Xiao, X Wang, R Wang, L Xu, S Liang, C Yang
Physical Chemistry Chemical Physics 21 (22), 11731-11739, 2019
202019
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