Antonio H. Castro Neto
Antonio H. Castro Neto
Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore
Verified email at - Homepage
Cited by
Cited by
The electronic properties of graphene
AHC Neto, F Guinea, NMR Peres, KS Novoselov, AK Geim
Reviews of modern physics 81 (1), 109, 2009
The electronic properties of graphene
AH Castro Neto, F Guinea, NMR Peres, KS Novoselov, AK Geim
Reviews of modern physics 81 (1), 109-162, 2009
2D materials and van der Waals heterostructures
KS Novoselov, A Mishchenko, A Carvalho, AHC Neto
Science 353 (6298), 2016
Substrate-induced bandgap opening in epitaxial graphene
SY Zhou, GH Gweon, AV Fedorov, PN First, WA De Heer, DH Lee, ...
Nature materials 6 (10), 770-775, 2007
Making graphene visible
P Blake, EW Hill, AH Castro Neto, KS Novoselov, D Jiang, R Yang, ...
Applied physics letters 91 (6), 063124, 2007
Strong light-matter interactions in heterostructures of atomically thin films
L Britnell, RM Ribeiro, A Eckmann, R Jalil, BD Belle, A Mishchenko, ...
Science 340 (6138), 1311-1314, 2013
Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect
EV Castro, KS Novoselov, SV Morozov, NMR Peres, JMBL Dos Santos, ...
Physical review letters 99 (21), 216802, 2007
Gate-tuning of graphene plasmons revealed by infrared nano-imaging
Z Fei, AS Rodin, GO Andreev, W Bao, AS McLeod, M Wagner, LM Zhang, ...
Nature 487 (7405), 82-85, 2012
Electronic properties of disordered two-dimensional carbon
NMR Peres, F Guinea, AHC Neto
Physical Review B 73 (12), 125411, 2006
Strain-induced pseudo–magnetic fields greater than 300 tesla in graphene nanobubbles
N Levy, SA Burke, KL Meaker, M Panlasigui, A Zettl, F Guinea, AHC Neto, ...
Science 329 (5991), 544-547, 2010
Tight-binding approach to uniaxial strain in graphene
VM Pereira, AHC Neto, NMR Peres
Physical Review B 80 (4), 045401, 2009
Strain-induced gap modification in black phosphorus
AS Rodin, A Carvalho, AHC Neto
Physical review letters 112 (17), 176801, 2014
Graphene bilayer with a twist: Electronic structure
JMBL Dos Santos, NMR Peres, AHC Neto
Physical review letters 99 (25), 256802, 2007
Electron-electron interactions in graphene: Current status and perspectives
VN Kotov, B Uchoa, VM Pereira, F Guinea, AHC Neto
Reviews of Modern Physics 84 (3), 1067, 2012
Electric field effect in ultrathin black phosphorus
SP Koenig, RA Doganov, H Schmidt, AH Castro Neto, B Özyilmaz
Applied Physics Letters 104 (10), 103106, 2014
Strain engineering of graphene’s electronic structure
VM Pereira, AHC Neto
Physical review letters 103 (4), 046801, 2009
Observation of Van Hove singularities in twisted graphene layers
G Li, A Luican, JMBL Dos Santos, AHC Neto, A Reina, J Kong, EY Andrei
Nature physics 6 (2), 109-113, 2010
Tunable phonon polaritons in atomically thin van der Waals crystals of boron nitride
S Dai, Z Fei, Q Ma, AS Rodin, M Wagner, AS McLeod, MK Liu, W Gannett, ...
Science 343 (6175), 1125-1129, 2014
Electron tunneling through ultrathin boron nitride crystalline barriers
L Britnell, RV Gorbachev, R Jalil, BD Belle, F Schedin, MI Katsnelson, ...
Nano letters 12 (3), 1707-1710, 2012
Electronic states and Landau levels in graphene stacks
F Guinea, AHC Neto, NMR Peres
Physical Review B 73 (24), 245426, 2006
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