| Efficient and ultraviolet durable inverted organic solar cells based on an aluminum-doped zinc oxide transparent cathode H Liu, Z Wu, J Hu, Q Song, B Wu, H Lam Tam, Q Yang, W Hong Choi, ... Applied Physics Letters 103 (4), 135_1, 2013 | 78 | 2013 |
| Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ... Applied Physics Letters 113 (23), 233502, 2018 | 65 | 2018 |
| 100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10% X Li, S Wang, H Liu, FA Ponce, T Detchprohm, RD Dupuis physica status solidi (b) 254 (8), 1600699, 2017 | 53 | 2017 |
| Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ... Applied Physics Express 12 (5), 051015, 2019 | 37 | 2019 |
| CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells DE Swanson, C Reich, A Abbas, T Shimpi, H Liu, FA Ponce, JM Walls, ... Journal of Applied Physics 123 (20), 203101, 2018 | 35 | 2018 |
| Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics H Liu, H Fu, K Fu, SR Alugubelli, PY Su, Y Zhao, FA Ponce Applied Physics Letters 114 (8), 082102, 2019 | 34 | 2019 |
| GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD C Yang, H Fu, VN Kumar, K Fu, H Liu, X Huang, TH Yang, H Chen, J Zhou, ... IEEE Transactions on Electron Devices 67 (10), 3972-3977, 2020 | 28 | 2020 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 25 | 2021 |
| Dopant profiling in p-i-n GaN structures using secondary electrons SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, FA Ponce Journal of Applied Physics 126 (1), 015704, 2019 | 25 | 2019 |
| Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing m-plane GaN substrates H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ... Applied Physics Express 11 (11), 111003, 2018 | 25 | 2018 |
| The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices K Fu, H Fu, X Deng, PY Su, H Liu, K Hatch, CY Cheng, D Messina, ... Applied Physics Letters 118 (22), 222104, 2021 | 19 | 2021 |
| Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films PY Su, H Liu, C Yang, K Fu, H Fu, Y Zhao, FA Ponce Applied Physics Letters 117 (10), 102110, 2020 | 17 | 2020 |
| Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, MR McCartney, FA Ponce Applied Physics Letters 115 (20), 201602, 2019 | 17 | 2019 |
| Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots H Xie, R Prioli, G Torelly, H Liu, AM Fischer, R Jakomin, R Mourão, ... Semiconductor Science and Technology 32 (5), 055013, 2017 | 11 | 2017 |
| Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment C Yang, H Fu, PY Su, H Liu, K Fu, X Huang, TH Yang, H Chen, J Zhou, ... Applied Physics Letters 117 (5), 052105, 2020 | 8 | 2020 |
| Influence of substrate misorientation on the optical properties of Mg-doped GaN H Liu, PY Su, Z Wu, R Liu, FA Ponce Journal of Applied Physics 127 (19), 195701, 2020 | 8 | 2020 |
| Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices K Fu, X Qi, H Fu, PY Su, H Liu, TH Yang, C Yang, J Montes, J Zhou, ... Semiconductor Science and Technology 36 (1), 014005, 2020 | 4 | 2020 |
| The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers PY Su, H Liu, S Wang, Z Wu, R Liu, FA Ponce Journal of Applied Physics 128 (5), 055301, 2020 | 4 | 2020 |
| Dislocation baskets in thick InxGa1−xN epilayers S Wang, H Xie, H Liu, AM Fischer, H McFavilen, FA Ponce Journal of Applied Physics 124 (10), 105701, 2018 | 4 | 2018 |
| Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P PY Su, H Liu, RMS Kawabata, EC Weiner, R Jakomin, MP Pires, RR King, ... Journal of Applied Physics 125 (5), 053104, 2019 | 3 | 2019 |
