| Band structure and fundamental optical transitions in wurtzite AlN J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei Applied Physics Letters 83 (25), 5163-5165, 2003 | 463 | 2003 |
| Unique optical properties of AlGaN alloys and related ultraviolet emitters KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 84 (25), 5264-5266, 2004 | 426 | 2004 |
| Mg acceptor level in AlN probed by deep ultraviolet photoluminescence KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang Applied physics letters 83 (5), 878-880, 2003 | 343 | 2003 |
| Optical and electrical properties of Mg-doped p-type J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 80 (7), 1210-1212, 2002 | 236 | 2002 |
| 200nm deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 89 (21), 2006 | 235 | 2006 |
| Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys KB Nam, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 86 (22), 2005 | 220 | 2005 |
| Temperature and compositional dependence of the energy band gap of AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 87 (24), 2005 | 218 | 2005 |
| Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys ML Nakarmi, N Nepal, JY Lin, HX Jiang Applied Physics Letters 94 (9), 2009 | 209 | 2009 |
| Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping ML Nakarmi, KH Kim, J Li, JY Lin, HX Jiang Applied physics letters 82 (18), 3041-3043, 2003 | 181 | 2003 |
| Transport properties of highly conductive -type Al-rich ML Nakarmi, KH Kim, K Zhu, JY Lin, HX Jiang Applied Physics Letters 85 (17), 3769-3771, 2004 | 179 | 2004 |
| Electrical and optical properties of Mg-doped Al0. 7Ga0. 3N alloys ML Nakarmi, KH Kim, M Khizar, ZY Fan, JY Lin, HX Jiang Applied Physics Letters 86 (9), 2005 | 177 | 2005 |
| Photoluminescence studies of impurity transitions in AlGaN alloys N Nepal, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 89 (9), 2006 | 172 | 2006 |
| Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied Physics Letters 90 (24), 2007 | 163 | 2007 |
| Correlation between optical and electrical properties of Mg-doped AlN epilayers ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang Applied physics letters 89 (15), 2006 | 162 | 2006 |
| Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 82 (11), 1694-1696, 2003 | 138 | 2003 |
| Band-edge photoluminescence of AlN epilayers J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 81 (18), 3365-3367, 2002 | 132 | 2002 |
| Achieving highly conductive AlGaN alloys with high Al contents KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 81 (6), 1038-1040, 2002 | 123 | 2002 |
| AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers KH Kim, ZY Fan, M Khizar, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 85 (20), 4777-4779, 2004 | 117 | 2004 |
| Band-edge exciton states in AlN single crystals and epitaxial layers L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ... Applied physics letters 85 (19), 4334-4336, 2004 | 107 | 2004 |
| Exciton localization in AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 88 (6), 2006 | 92 | 2006 |
Hongxing Jiang (江红星）Ed Whitacre Endowed Chair and P. W. Horn Distinguished Professor of ECE, Texas Tech UniversityVerified email at ttu.edu
