| High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates S Muhtadi, SM Hwang, A Coleman, F Asif, G Simin, MVS Chandrashekhar, ... IEEE Electron Device Letters 38 (7), 914-917, 2017 | 67 | 2017 |
| 276 nm substrate-free flip-chip AlGaN light-emitting diodes S Hwang, D Morgan, A Kesler, M Lachab, B Zhang, A Heidari, H Nazir, ... Applied physics express 4 (3), 032102, 2011 | 65 | 2011 |
| Vertical injection thin film deep ultraviolet light emitting diodes with AlGaN multiple-quantum wells active region V Adivarahan, A Heidari, B Zhang, Q Fareed, M Islam, S Hwang, ... Applied physics express 2 (9), 092102, 2009 | 53 | 2009 |
| 280 nm deep ultraviolet light emitting diode lamp with an AlGaN multiple quantum well active region V Adivarahan, A Heidari, B Zhang, Q Fareed, S Hwang, M Islam, A Khan Applied Physics Express 2 (10), 102101, 2009 | 49 | 2009 |
| A hybrid micro-pixel based deep ultraviolet light-emitting diode lamp S Hwang, M Islam, B Zhang, M Lachab, J Dion, A Heidari, H Nazir, ... Applied physics express 4 (1), 012102, 2010 | 47 | 2010 |
| Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan IEEE Electron Device Letters 39 (10), 1568-1571, 2018 | 38 | 2018 |
| High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates S Muhtadi, S Hwang, A Coleman, F Asif, A Lunev, MVS Chandrashekhar, ... Applied Physics Letters 110 (19), 2017 | 32 | 2017 |
| High-speed solar-blind UV photodetectors using high-Al content Al0. 64Ga0. 36N/Al0. 34Ga0. 66N multiple quantum wells S Muhtadi, SM Hwang, AL Coleman, A Lunev, F Asif, VSN Chava, ... Applied Physics Express 10 (1), 011004, 2016 | 28 | 2016 |
| Selective area deposited n-Al0. 5Ga0. 5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity S Muhtadi, S Hwang, A Coleman, F Asif, A Lunev, MVS Chandrashekhar, ... Applied Physics Letters 110 (17), 2017 | 25 | 2017 |
| Ohmic contact to high-aluminum-content AlGaN epilayers S Srivastava, SM Hwang, MD Islam, K Balakrishnan, V Adivarahan, ... Journal of electronic materials 38, 2348-2352, 2009 | 25 | 2009 |
| Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors T Razzak, S Hwang, A Coleman, H Xue, SH Sohel, S Bajaj, Y Zhang, ... Applied Physics Letters 115 (4), 2019 | 24 | 2019 |
| All MOCVD grown Al0. 7Ga0. 3N/Al0. 5Ga0. 5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors H Xue, S Hwang, T Razzak, C Lee, GC Ortiz, Z Xia, SH Sohel, J Hwang, ... Solid-State Electronics 164, 107696, 2020 | 22 | 2020 |
| RF operation in graded AlxGa1−xN (x = 0.65 to 0.82) channel transistors T Razzak, S Hwang, A Coleman, S Bajaj, H Xue, Y Zhang, ... Electronics Letters 54 (23), 1351-1353, 2018 | 20 | 2018 |
| Reliability issues in AlGaN based deep ultraviolet light emitting diodes A Khan, S Hwang, J Lowder, V Adivarahan, Q Fareed 2009 IEEE International Reliability Physics Symposium, 89-93, 2009 | 11 | 2009 |
| Ultra-wide band gap materials for high frequency applications T Razzak, H Xue, Z Xia, S Hwang, A Khan, W Lu, S Rajan 2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018 | 8 | 2018 |
| Small signal analysis of ultra-wide bandgap Al0. 7Ga0. 3N channel MESFETs H Xue, T Razzak, S Hwang, A Coleman, SH Sohel, S Rajan, A Khan, ... Microelectronic Engineering 237, 111495, 2021 | 3 | 2021 |
| All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs H Xue, T Razzak, S Hwang, A Coleman, S Bajaj, Y Zhang, Z Jamal-Eddin, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 2 | 2018 |
| Reliability Physics Symp A Khan, S Hwang, J Lowder IEEE Int 89, 2009 | 2 | 2009 |
| Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors T Razzak, S Hwang, A Coleman, H Xue, SH Sohel, S Bajaj, Y Zhang, ... arXiv preprint arXiv:1906.10270, 2019 | | 2019 |
| Al0.65Ga0.35N channel high electron mobility transistors on AlN/ sapphire templates S Muhtadi, SM Hwang, A Coleman, F Asif, A Khan 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | | 2017 |
