Christian Volk
Christian Volk
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Cited by
Cited by
Universal control of a six-qubit quantum processor in silicon
SGJ Philips, MT Mądzik, SV Amitonov, SL de Snoo, M Russ, N Kalhor, ...
Nature, 919-924, 2022
Quantum dot arrays in silicon and germanium
WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ...
Applied Physics Letters 116 (8), 2020
Spin-orbit coupling and phase coherence in InAs nanowires
S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ...
Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010
Probing relaxation times in graphene quantum dots
C Volk, C Neumann, S Kazarski, S Fringes, S Engels, F Haupt, A Müller, ...
Nature Communications 4 (1), 1753, 2013
Loading a quantum-dot based “Qubyte” register
C Volk, AMJ Zwerver, U Mukhopadhyay, PT Eendebak, CJ van Diepen, ...
npj Quantum Information 5 (1), 29, 2019
Transport in graphene nanostructures
C Stampfer, S Fringes, J Güttinger, F Molitor, C Volk, B Terrés, J Dauber, ...
Frontiers of Physics 6, 271-293, 2011
Effect of Si-doping on InAs nanowire transport and morphology
S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ...
Journal of applied physics 110 (5), 2011
Single-electron double quantum dots in bilayer graphene
L Banszerus, S Möller, E Icking, K Watanabe, T Taniguchi, C Volk, ...
Nano letters 20 (3), 2005-2011, 2020
Electron–hole crossover in gate-controlled bilayer graphene quantum dots
L Banszerus, A Rothstein, T Fabian, S Moller, E Icking, S Trellenkamp, ...
Nano letters 20 (10), 7709-7715, 2020
Etched graphene quantum dots on hexagonal boron nitride
S Engels, A Epping, C Volk, S Korte, B Voigtländer, K Watanabe, ...
Applied Physics Letters 103 (7), 2013
Electronic excited states in bilayer graphene double quantum dots
C Volk, S Fringes, B Terrés, J Dauber, S Engels, S Trellenkamp, ...
Nano letters 11 (9), 3581-3586, 2011
Disorder induced Coulomb gaps in graphene constrictions with different aspect ratios
B Terrés, J Dauber, C Volk, S Trellenkamp, U Wichmann, C Stampfer
Applied physics letters 98 (3), 2011
Spin-valley coupling in single-electron bilayer graphene quantum dots
L Banszerus, S Möller, C Steiner, E Icking, S Trellenkamp, F Lentz, ...
Nature communications 12 (1), 5250, 2021
Charge detection in a bilayer graphene quantum dot
S Fringes, C Volk, C Norda, B Terrés, J Dauber, S Engels, S Trellenkamp, ...
physica status solidi (b) 248 (11), 2684-2687, 2011
Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
E Icking, L Banszerus, F Wörtche, F Volmer, P Schmidt, C Steiner, ...
Advanced Electronic Materials 8 (11), 2200510, 2022
Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
C Volk, A Chatterjee, F Ansaloni, CM Marcus, F Kuemmeth
Nano letters 19 (8), 5628-5633, 2019
Qubit device integration using advanced semiconductor manufacturing process technology
R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018
Spin relaxation in a single-electron graphene quantum dot
L Banszerus, K Hecker, S Möller, E Icking, K Watanabe, T Taniguchi, ...
Nature Communications 13 (1), 1-6, 2022
Reducing disorder in graphene nanoribbons by chemical edge modification
J Dauber, B Terrés, C Volk, S Trellenkamp, C Stampfer
Applied physics letters 104 (8), 2014
Graphene-based charge sensors
C Neumann, C Volk, S Engels, C Stampfer
Nanotechnology 24 (44), 444001, 2013
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