| Coverage and connectivity in WSNs: A survey, research issues and challenges A Tripathi, HP Gupta, T Dutta, R Mishra, KK Shukla, S Jit IEEE Access 6, 26971-26992, 2018 | 186 | 2018 |
| 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure S Kumar, E Goel, K Singh, B Singh, PK Singh, K Baral, S Jit IEEE Transactions on Electron Devices 64 (3), 960-968, 2017 | 167 | 2017 |
| A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- Stacked Gate-Oxide Structure S Kumar, E Goel, K Singh, B Singh, M Kumar, S Jit IEEE Transactions on Electron Devices 63 (8), 3291-3299, 2016 | 142 | 2016 |
| 2-D analytical modeling of threshold voltage for graded-channel dual-material double-gate MOSFETs E Goel, S Kumar, K Singh, B Singh, M Kumar, S Jit IEEE Transactions on Electron Devices 63 (3), 966-973, 2016 | 108 | 2016 |
| Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications MR Tripathy, AK Singh, A Samad, S Chander, K Baral, PK Singh, S Jit IEEE Transactions on Electron Devices 67 (3), 1285-1292, 2020 | 101 | 2020 |
| A 2D analytical model of the channel potential and threshold voltage of double-gate (DG) MOSFETs with vertical Gaussian doping profile PK Tiwari, S Kumar, S Mittal, V Srivastava, U Pandey, S Jit 2009 International Multimedia, Signal Processing and Communication …, 2009 | 77 | 2009 |
| Analytical modeling of channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile B Singh, D Gola, K Singh, E Goel, S Kumar, S Jit IEEE Transactions on Electron Devices 63 (6), 2299-2305, 2016 | 74 | 2016 |
| A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors PK Tiwari, S Dubey, M Singh, S Jit Journal of Applied Physics 108 (7), 2010 | 73 | 2010 |
| A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical … S Dubey, PK Tiwari, S Jit Journal of Applied Physics 108 (3), 2010 | 71 | 2010 |
| Ultraviolet Detection Properties of p-Si/n-TiO2Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study G Rawat, D Somvanshi, H Kumar, Y Kumar, C Kumar, S Jit IEEE Transactions on Nanotechnology 15 (2), 193-200, 2015 | 70 | 2015 |
| 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure S Kumar, K Singh, S Chander, E Goel, PK Singh, K Baral, B Singh, S Jit IEEE Transactions on Electron Devices 65 (1), 331-338, 2017 | 69 | 2017 |
| CuO nanowire-based extended-gate field-effect-transistor (FET) for pH sensing and enzyme-free/receptor-free glucose sensing applications AK Mishra, DK Jarwal, B Mukherjee, A Kumar, S Ratan, S Jit IEEE Sensors Journal 20 (9), 5039-5047, 2020 | 66 | 2020 |
| Mean barrier height and Richardson constant for Pd/ZnO thin film-based Schottky diodes grown on n-Si substrates by thermal evaporation method D Somvanshi, S Jit IEEE electron device letters 34 (10), 1238-1240, 2013 | 65 | 2013 |
| Ultraviolet photodetection properties of ZnO/Si heterojunction diodes fabricated by ALD technique without using a buffer layer P Hazra, SK Singh, S Jit JSTS: Journal of Semiconductor Technology and Science 14 (1), 117-123, 2014 | 64 | 2014 |
| Colloidal ZnO quantum dots based spectrum selective ultraviolet photodetectors Y Kumar, H Kumar, G Rawat, C Kumar, A Sharma, BN Pal, S Jit IEEE Photonics Technology Letters 29 (4), 361-364, 2017 | 59 | 2017 |
| Electrical and ammonia gas sensing properties of poly (3, 3‴-dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method C Kumar, G Rawat, H Kumar, Y Kumar, R Prakash, S Jit Organic Electronics 48, 53-60, 2017 | 58 | 2017 |
| Temperature analysis of Ge/Si heterojunction SOI-tunnel FET S Chander, SK Sinha, S Kumar, PK Singh, K Baral, K Singh, S Jit Superlattices and Microstructures 110, 162-170, 2017 | 57 | 2017 |
| Sol-gel-based highly sensitive Pd/n-ZnO thin film/n-Si Schottky ultraviolet photodiodes AB Yadav, A Pandey, D Somvanshi, S Jit IEEE Transactions on Electron Devices 62 (6), 1879-1884, 2015 | 57 | 2015 |
| Analysis of temperature-dependent electrical characteristics of n-ZnO nanowires (NWs)/p-Si heterojunction diodes D Somvanshi, S Jit IEEE transactions on nanotechnology 13 (1), 62-69, 2013 | 55 | 2013 |
| A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs P Pandey, BB Pal, S Jit IEEE Transactions on Electron Devices 51 (2), 246-254, 2004 | 55 | 2004 |
