| Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm S Barraud, M Berthome, R Coquand, M Cassé, T Ernst, MP Samson, ... IEEE Electron Device Letters 33 (9), 1225-1227, 2012 | 254 | 2012 |
| Revisited parameter extraction methodology for electrical characterization of junctionless transistors DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo Solid-State Electronics 90, 86-93, 2013 | 115 | 2013 |
| Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013 | 46 | 2013 |
| Electrical characterization and revisited parameter extraction methodology in junctionless transistors DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo Proc. EuroSOI, 109-110, 2012 | 17 | 2012 |
| Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm M Najmzadeh, M Berthomé, JM Sallese, W Grabinski, AM Ionescu Solid-State Electronics 98, 55-62, 2014 | 15 | 2014 |
| Application-oriented performance of RF CMOS technologies on flexible substrates J Philippe, A Lecavelier, M Berthomé, JF Robillard, C Gaquière, ... 2015 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2015 | 11 | 2015 |
| Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu IEEE Transactions on Electron Devices 59 (12), 3519-3526, 2012 | 11 | 2012 |
| Physically-based, multi-architecture, analytical model for junctionless transistors M Berthomé, S Barraud, A Ionescu, T Ernst Ultimate Integration on Silicon (ULIS), 2011 12th International Conference …, 2011 | 9 | 2011 |
| Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions A Bhaskar, J Philippe, M Berthomé, E Okada, JF Robillard, D Gloria, ... 2018 7th Electronic System-Integration Technology Conference (ESTC), 1-6, 2018 | 6 | 2018 |
| Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate S Bouaziz, M Berthomé, JF Robillard, E Dubois 2015 European Microwave Conference (EuMC), 869-872, 2015 | 5 | 2015 |
| Focusing surface waves with an inhomogeneous metamaterial lens MA Escobar, M Berthomé, C Ma, Z Liu Applied optics 49 (7), A18-A22, 2010 | 5 | 2010 |
| Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm M Najmzadeh, JM Sallese, M Berthome, W Grabinski, AM Ionescu 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 4 | 2013 |
| Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm M Najmzadeh, JM Sallese, M Berthome, W Grabinski, AM Ionescu 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 4 | 2013 |
| Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding E Dubois, J Philippe, M Berthomé, JF Robillard, C Gaquière, F Danneville, ... 2016 6th Electronic System-Integration Technology Conference (ESTC), 1-5, 2016 | 1 | 2016 |
| Cost Effective Laser Structuration of Optical Waveguides on Thin Glass Interposer JM Boucaud, FE Ayi-Yovo, Q Hivin, M Berthomé, C Durand, F Gianesello, ... Journal of Lightwave Technology 35 (20), 4445-4450, 2017 | | 2017 |
| Ultrashort pulse laser processing as enabling technology for selectivity and ablation challenges in microelectronics ED Matthieu Berthomé, Quentin Hivin, Jean-François Robillard E-MRS 2016, 2016 | | 2016 |
| 2011 12th International Conference on Ultimate Integration on Silicon (ULIS 2011) M Berthomé, S Barraud, A Ionescu, T Ernst | | |
A.M. IonescuProfessor of NanoelectronicsDirección de correo verificada de epfl.ch
