| Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers A Haque, H Yagi, T Sano, T Maruyama, S Arai Journal of applied physics 94 (3), 2018-2023, 2003 | 45 | 2003 |
| A comparison of wave-function penetration effects on gate capacitance in deep submicron n-and p-MOSFETs A Haque, MZ Kauser IEEE Transactions on Electron Devices 49 (9), 1580-1587, 2002 | 44 | 2002 |
| An efficient technique to calculate the normalized wave functions in arbitrary one-dimensional quantum well structures A Haque, AN Khondker Journal of applied physics 84 (10), 5802-5804, 1998 | 43 | 1998 |
| On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides A Haque, A Rahman, IB Chowdhury Solid-State Electronics 44 (10), 1833-1836, 2000 | 38 | 2000 |
| GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes H Yagi, T Sano, K Ohira, D Plumwongrot, T Maruyama, A Haque, ... Japanese journal of applied physics 43 (6R), 3401, 2004 | 36 | 2004 |
| Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates MM Satter, A Haque Solid-State Electronics 54 (6), 621-627, 2010 | 29 | 2010 |
| On the Enhancement of the Drain Current in Indium-Rich InGaAs Surface-Channel MOSFETs ATM Golam Sarwar, MR Siddiqui, MM Satter, A Haque Electron Devices, IEEE Transactions on 59 (6), 1653-1660, 2012 | 24 | 2012 |
| Quantum transport in mesoscopic devices: Current conduction in quantum wire structures A Haque, AN Khondker Journal of Applied Physics 87 (5), 2553-2560, 2000 | 24 | 2000 |
| A physically based accurate model for quantum mechanical correction to the surface potential of nanoscale MOSFETs MA Karim, A Haque IEEE transactions on electron devices 57 (2), 496-502, 2009 | 23 | 2009 |
| Accurate modeling of direct tunneling hole current in p-metal–oxide–semiconductor devices A Haque, K Alam Applied physics letters 81 (4), 667-669, 2002 | 21 | 2002 |
| Accumulation gate capacitance of MOS devices with ultrathin high-/spl kappa/gate dielectrics: modeling and characterization AE Islam, A Haque IEEE transactions on electron devices 53 (6), 1364-1372, 2006 | 19 | 2006 |
| Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs MMA Hakim, A Haque IEEE Transactions on Electron Devices 49 (9), 1669-1671, 2002 | 19 | 2002 |
| Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method H Yagi, T Sano, K Ohira, T Maruyama, A Haque, S Arai Japanese journal of applied physics 42 (7A), L748, 2003 | 18 | 2003 |
| Agrivoltaics analysis in a techno-economic framework: Understanding why agrivoltaics on rice will always be profitable MS Ahmed, MR Khan, A Haque, MR Khan Applied Energy 323, 119560, 2022 | 17 | 2022 |
| Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics MMA Hakim, A Haque Solid-State Electronics 48 (7), 1095-1100, 2004 | 15 | 2004 |
| Effects of wave function penetration into the gate-oxide on self-consistent modeling of scaled MOSFETs MZ Kauser, MS Hasan, A Haque IEEE Transactions on Electron Devices 49 (4), 693-695, 2002 | 15 | 2002 |
| Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal–oxide–semiconductor transistors K Alam, S Zaman, MM Chowdhury, MR Khan, A Haque Journal of applied physics 92 (2), 937-943, 2002 | 14 | 2002 |
| A study into the broadening of the quantized inversion layer states in deep submicron MOSFETs A Rahman, A Haque Solid-State Electronics 45 (5), 755-760, 2001 | 13 | 2001 |
| A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates MM Satter, AE Islam, D Varghese, MA Alam, A Haque Solid-State Electronics 56 (1), 141-147, 2011 | 12 | 2011 |
| On the conductance and the conductivity of disordered quantum wires A Haque, AN Khondker Journal of applied physics 80 (7), 3876-3880, 1996 | 10 | 1996 |
Takeo MaruyamaSchool of Electrical and Computer Engineering, Kanazawa UniversityVerified email at ec.t.kanazawa-u.ac.jp
