Thierry Taliercio
Thierry Taliercio
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN
P Perlin, J Camassel, W Knap, T Taliercio, JC Chervin, T Suski, I Grzegory, ...
Applied Physics Letters 67 (17), 2524-2526, 1995
Internal electric field in wurtzite quantum wells
C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
Influence of electron-phonon interaction on the optical properties of III nitride semiconductors
XB Zhang, T Taliercio, S Kolliakos, P Lefebvre
Journal of Physics: Condensed Matter 13 (32), 7053, 2001
Radiative lifetime of a single electron-hole pair in quantum dots
T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In) N/GaN systems
A Morel, P Lefebvre, S Kalliakos, T Taliercio, T Bretagnon, B Gil
Physical Review B 68 (4), 045331, 2003
Barrier composition dependence of the internal electric field in quantum wells
T Bretagnon, P Lefebvre, T Guillet, T Taliercio, B Gil, C Morhain
Applied physics letters 90 (20), 201912, 2007
Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory
R Bardoux, T Guillet, B Gil, P Lefebvre, T Bretagnon, T Taliercio, ...
Physical Review B 77 (23), 235315, 2008
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
S Kalliakos, XB Zhang, T Taliercio, P Lefebvre, B Gil, N Grandjean, ...
Applied physics letters 80 (3), 428-430, 2002
Photoluminescence of single hexagonal quantum dots on : Spectral diffusion effects
R Bardoux, T Guillet, P Lefebvre, T Taliercio, T Bretagnon, S Rousset, ...
Physical Review B 74 (19), 195319, 2006
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite quantum well after high photoexcitation
P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ...
Physical Review B 69 (3), 035307, 2004
Acoustic investigation of porous silicon layers
RJM Da Fonseca, JM Saurel, A Foucaran, J Camassel, E Massone, ...
Journal of materials science 30 (1), 35-39, 1995
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P Lefebvre, T Taliercio, A Morel, J Allègre, M Gallart, B Gil, H Mathieu, ...
Applied Physics Letters 78 (11), 1538-1540, 2001
Localized surface plasmon resonances in highly doped semiconductors nanostructures
V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio
Applied Physics Letters 101 (16), 161113, 2012
Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
S Kalliakos, T Bretagnon, P Lefebvre, T Taliercio, B Gil, N Grandjean, ...
Journal of applied physics 96 (1), 180-185, 2004
Nonlinear behavior of photoabsorption in hexagonal nitride quantum wells due to free carrier screening of the internal fields
S Kalliakos, P Lefebvre, T Taliercio
Physical Review B 67 (20), 205307, 2003
Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties
R Viennois, T Taliercio, V Potin, A Errebbahi, B Gil, S Charar, A Haidoux, ...
Materials Science and Engineering: B 82 (1-3), 45-49, 2001
Realization of porous silicon membranes for gas sensor applications
T Taliercio, M Dilhan, E Massone, AM Gue, B Fraisse, A Foucaran
Thin Solid Films 255 (1-2), 310-312, 1995
Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration
T Taliercio, VN Guilengui, L Cerutti, E Tournié, JJ Greffet
Optics express 22 (20), 24294-24303, 2014
All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range
FB Barho, F Gonzalez-Posada, MJ Milla-Rodrigo, M Bomers, L Cerutti, ...
Optics express 24 (14), 16175-16190, 2016
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