Ian Cayrefourcq
Ian Cayrefourcq
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Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2gate stack
V Barral, T Poiroux, F Andrieu, C Buj-Dufournet, O Faynot, T Ernst, ...
2007 IEEE International Electron Devices Meeting, 61-64, 2007
Passive alignment using slanted wall pedestal
I Cayrefourcq, C Pusarla
US Patent 6,643,434, 2003
Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility
W Xiong, CR Cleavelin, P Kohli, C Huffman, T Schulz, K Schruefer, ...
IEEE Electron Device Letters 27 (7), 612-614, 2006
Performance enhancement of MUGFET devices using super critical strained-SOI (SC-SSOI) and CESL
N Collaert, R Rooyackers, F Clemente, P Zimmerman, I Cayrefourcq, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 52-53, 2006
Advanced SOI Substrate Manufacturing
C Mazuré, GK Celler, C Maleville, I Cayrefourcq
2004 International Conference on Integrated Circuit Design and Technology …, 2004
Electro-optical device, notably for optical distribution
I Cayrefourcq
US Patent 6,212,319, 2001
Method of detaching a thin film at moderate temperature after co-implantation
I Cayrefourcq, NB Mohamed, C Lagahe-Blanchard, NP Nguyen
US Patent 7,176,108, 2007
25nm Short and narrow strained FDSOI with TiN/HfO2 gate stack
S Deleonibus, C Mazure, P Gaud, H Grampeix, JP Colonna, B Previtali, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 134-135, 2006
Method of catastrophic transfer of a thin film after co-implantation
NP Nguyen, I Cayrefourcq, C Lagahe-Blanchard
US Patent 7,772,087, 2010
Study of HCl and secco defect etching for characterization of thick sSOI
A Abbadie, SW Bedell, JM Hartmann, DK Sadana, F Brunier, C Figuet, ...
Journal of The Electrochemical Society 154 (8), H713, 2007
Impact of Mobility Boosters (XsSOI, CESL, TiN gate) on the Performance of< 100> or< 110> oriented FDSOI cMOSFETs for the 32nm Node
F Andrieu, O Faynot, F Rochette, JC Barbé, C Buj, Y Bogumilowicz, ...
2007 IEEE Symposium on VLSI Technology, 50-51, 2007
Ultra-thin fully depleted SOI devices with thin BOX, ground plane and strained liner booster
C Gallon, C Fenouillet-Beranger, A Vandooren, F Boeuf, S Monfray, ...
2006 IEEE international SOI Conferencee Proceedings, 17-18, 2006
Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range
P Nguyen, I Cayrefourcq, KK Bourdelle, A Boussagol, E Guiot, ...
Journal of applied physics 97 (8), 083527, 2005
MEMS-based selectable laser source
I Cayrefourcq, PP Maigne
US Patent 6,693,926, 2004
New layer transfers obtained by the SmartCut process
H Moriceau, F Fournel, B Aspar, B Bataillou, A Beaumont, C Morales, ...
Journal of Electronic Materials 32 (8), 829-835, 2003
Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
NP Nguyen, I Cayrefourcq, C Lagahe-Blanchard, K Bourdelle, A Tauzin, ...
US Patent 8,309,431, 2012
Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology
AVY Thean, T White, M Sadaka, L McCormick, M Ramon, R Mora, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 134-135, 2005
Stress hybridization for multigate devices fabricated on supercritical strained-SOI (SC-SSOI)
N Collaert, R Rooyackers, A De Keersgieter, FE Leys, I Cayrefourcq, ...
IEEE electron device letters 28 (7), 646-648, 2007
Strain-enhanced CMOS through novel process-substrate stress hybridization of super-critically thick strained silicon directly on insulator (SC-SSOI)
C Mazure, I Cayrefourcq, J Mogab, S Venkatesan, BE White, BY Nguyen, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 130-131, 2006
Method of manufacturing a wafer
T Maurice, I Cayrefourcq, F Fournel
US Patent 6,838,358, 2005
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