| Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management JP Zhang, HM Wang, ME Gaevski, CQ Chen, Q Fareed, JW Yang, ... Applied physics letters 80 (19), 3542-3544, 2002 | 259 | 2002 |
| Anisotropic structural characteristics of GaN templates and coalesced epitaxial lateral overgrown films deposited on sapphire H Wang, C Chen, Z Gong, J Zhang, M Gaevski, M Su, J Yang, MA Khan Applied physics letters 84 (4), 499-501, 2004 | 193 | 2004 |
| Polarization effects in photoluminescence of - and -plane GaN/AlGaN multiple quantum wells E Kuokstis, CQ Chen, ME Gaevski, WH Sun, JW Yang, G Simin, ... Applied Physics Letters 81 (22), 4130-4132, 2002 | 155 | 2002 |
| Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm A Chitnis, J Sun, V Mandavilli, R Pachipulusu, S Wu, M Gaevski, ... Applied Physics Letters 81 (18), 3491-3493, 2002 | 146 | 2002 |
| Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors V Adivarahan, M Gaevski, WH Sun, H Fatima, A Koudymov, S Saygi, ... IEEE Electron Device Letters 24 (9), 541-543, 2003 | 108 | 2003 |
| GaN homoepitaxy on freestanding oriented GaN substrates CQ Chen, ME Gaevski, WH Sun, E Kuokstis, JP Zhang, RSQ Fareed, ... Applied physics letters 81 (17), 3194-3196, 2002 | 102 | 2002 |
| Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates Z Chen, RS Qhalid Fareed, M Gaevski, V Adivarahan, JW Yang, A Khan, ... Applied physics letters 89 (8), 081905, 2006 | 98 | 2006 |
| A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire C Chen, J Zhang, J Yang, V Adivarahan, S Rai, S Wu, H Wang, W Sun, ... Japanese journal of applied physics 42 (7B), L818, 2003 | 84 | 2003 |
| Optical power degradation mechanisms in AlGaN-based deep ultraviolet light-emitting diodes on sapphire Z Gong, M Gaevski, V Adivarahan, W Sun, M Shatalov, M Asif Khan Applied physics letters 88 (12), 121106, 2006 | 75 | 2006 |
| Room-temperature stimulated emission from AlN at 214 nm M Shatalov, M Gaevski, V Adivarahan, A Khan Japanese journal of applied physics 45 (12L), L1286, 2006 | 72 | 2006 |
| AlGaN layers grown on GaN using strain-relief interlayers CQ Chen, JP Zhang, ME Gaevski, HM Wang, WH Sun, RSQ Fareed, ... Applied physics letters 81 (26), 4961-4963, 2002 | 71 | 2002 |
| Voltage-gated ion transport through semiconducting conical nanopores formed by metal nanoparticle-assisted plasma etching T James, YV Kalinin, CC Chan, JS Randhawa, M Gaevski, DH Gracias Nano letters 12 (7), 3437-3442, 2012 | 66 | 2012 |
| Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire C Chen, J Yang, H Wang, J Zhang, V Adivarahan, M Gaevski, E Kuokstis, ... Japanese journal of applied physics 42 (6B), L640, 2003 | 66 | 2003 |
| Intrinsic microstrains and normal-phase flicker noise in epitaxial films grown on various substrates AV Bobyl, ME Gaevski, SF Karmanenko, RN Kutt, RA Suris, IA Khrebtov, ... Journal of applied physics 82 (3), 1274-1280, 1997 | 56 | 1997 |
| Magneto-optical study of magnetic-flux penetration into a current-carrying high-temperature-superconductor strip ME Gaevski, AV Bobyl, DV Shantsev, YM Galperin, TH Johansen, ... Physical Review B 59 (14), 9655, 1999 | 55 | 1999 |
| GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices WH Sun, JW Yang, CQ Chen, JP Zhang, ME Gaevski, E Kuokstis, ... Applied physics letters 83 (13), 2599-2601, 2003 | 51 | 2003 |
| Electrical properties of two-dimensional fullerene matrices TL Makarova, B Sundqvist, P Scharff, ME Gaevski, E Olsson, VA Davydov, ... Carbon 39 (14), 2203-2209, 2001 | 41 | 2001 |
| Technique to automatically measure electron-beam diameter and astigmatism: BEAMETR S Babin, M Gaevski, D Joy, M Machin, A Martynov Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 39 | 2006 |
| Submilliwatt operation of AlInGaN based multifinger-design 315 nm light emitting diode (LED) over sapphire substrate A Chitnis, V Adivarahan, M Shatalov, J Zhang, M Gaevski, W Shuai, ... Japanese journal of applied physics 41 (3B), L320, 2002 | 38 | 2002 |
| Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates V Adivarahan, Q Fareed, S Srivastava, T Katona, M Gaevski, A Khan Japanese journal of applied physics 46 (6L), L537, 2007 | 35 | 2007 |
Grigory SiminUniversity of South CarolinaVerified email at engr.sc.edu
