Pavel Bolshakov
Pavel Bolshakov
Intel Device Integration Engineer
Verified email at intel.com
Title
Cited by
Cited by
Year
Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young
Applied Physics Letters 111 (3), 032110, 2017
512017
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis
P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ...
2D Materials 5 (3), 031002, 2018
492018
Dual-Gate MoS2 Transistors with sub-10 nm Top-Gate High-k Dielectrics
P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ...
Applied Physics Letters 112 (25), 253502, 2018
402018
Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy
P Zhao, A Azcatl, YY Gomeniuk, P Bolshakov, M Schmidt, SJ McDonnell, ...
ACS applied materials & interfaces 9 (28), 24348-24356, 2017
402017
Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
P Zhao, A Azcatl, P Bolshakov, J Moon, CL Hinkle, PK Hurley, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
372017
Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young
Microelectronic Engineering 178, 190-193, 2017
302017
Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure
P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ...
ACS Applied Electronic Materials 1 (2), 210-219, 2019
272019
Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ...
ACS Applied Nano Materials 2 (1), 75-88, 2018
222018
Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics
P Zhao, PB Vyas, S McDonnell, P Bolshakov-Barrett, A Azcatl, CL Hinkle, ...
Microelectronic Engineering 147, 151-154, 2015
192015
Evaluation of few-layer MoS2 transistors with a top gate and HfO2 dielectric
CD Young, P Zhao, P Bolshakov-Barrett, A Azcatl, PK Hurley, ...
ECS Transactions 75 (5), 153, 2016
142016
Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System
P Zhao, A Padovani, P Bolshakov, A Khosravi, L Larcher, PK Hurley, ...
ACS Applied Electronic Materials 1 (8), 1372-1377, 2019
112019
Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes
CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ...
2D Materials 6 (4), 045020, 2019
82019
Investigation of critical interfaces in few-layer MoS2 field effect transistors with high-k dielectrics
CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ...
ECS Transactions 80 (1), 219, 2017
52017
Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study
P Zhao, A Azcatl, P Bolshakov-Barrett, RM Wallace, CD Young, PK Hurley
2016 International Conference on Microelectronic Test Structures (ICMTS …, 2016
32016
Impact of Al2O3 deposition temperature on the performance and initial stability of nanocrystalline ZnO thin-film transistors
RA Rodriguez-Davila, RA Chapman, P Bolshakov, CD Young, ...
Microelectronic Engineering 217, 111114, 2019
12019
Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2field-effect-transistors
P Bolshakov, P Zhao, CM Smyth, A Azcatl, RM Wallace, CD Young, ...
2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017
12017
Investigating interface states and oxide traps in the MoS2/oxide/Si system
E Coleman, G Mirabelli, P Bolshakov, P Zhao, E Caruso, F Gity, ...
Solid-State Electronics 186, 108123, 2021
2021
Deconvolution of Hot Carrier and Cold Carrier Injection in ZnO TFTs
P Bolshakov, RA Rodriguez-Davila, M Quevedo-Lopez, CD Young
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 73-74, 2020
2020
Investigation of Critical Interfaces of Transition Metal Dichalcogenide Devices for Future Device Applications
P Bolshakov
2019
Reliability Assessment of Low-Temperature ZnO-Based Thin-Film Transistors
CD Young, A Rodolfo, P Bolshakov, RA Chapman
Handbook of Flexible and Stretchable Electronics, 375, 2019
2019
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