| Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces C Zhou, S Zhang, Z Lv, Z Ma, C Yu, Z Feng, M Chan npj 2D Materials and Applications 4 (1), 46, 2020 | 63 | 2020 |
| Low‐power complementary inverter with negative capacitance 2D semiconductor transistors J Wang, X Guo, Z Yu, Z Ma, Y Liu, Z Lin, M Chan, Y Zhu, X Wang, Y Chai Advanced Functional Materials 30 (46), 2003859, 2020 | 62 | 2020 |
| Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope J Wang, L Cai, J Chen, X Guo, Y Liu, Z Ma, Z Xie, H Huang, M Chan, ... Science Advances 7 (44), eabf8744, 2021 | 39 | 2021 |
| Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance J Wang, X Guo, Z Yu, Z Ma, Y Liu, M Chan, Y Zhu, X Wang, Y Chai 2018 IEEE International Electron Devices Meeting (IEDM), 22.3. 1-22.3. 4, 2018 | 28 | 2018 |
| Control of hexagonal boron nitride dielectric thickness by single layer etching Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan Journal of Materials Chemistry C 7 (21), 6273-6278, 2019 | 16 | 2019 |
| Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations Z Ahmed, Q Shi, Z Ma, L Zhang, H Guo, M Chan IEEE Electron Device Letters 41 (1), 171-174, 2019 | 13 | 2019 |
| Low temperature synthesis of high-density carbon nanotubes on insulating substrate Y Xiao, Z Ahmed, Z Ma, C Zhou, L Zhang, M Chan Nanomaterials 9 (3), 473, 2019 | 11 | 2019 |
| Robust Lead‐Free Perovskite Nanowire Array‐Based Artificial Synapses Exemplifying Gestalt Principle of Closure via a Letter Recognition Scheme S Poddar, Z Chen, Z Ma, Y Zhang, CLJ Chan, B Ren, Q Zhang, D Zhang, ... Advanced Intelligent Systems 4 (7), 2200065, 2022 | 8 | 2022 |
| High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact Z Ma, L Zhang, C Zhou, M Chan IEEE Electron Device Letters 42 (3), 343-346, 2021 | 8 | 2021 |
| Ultralow- Dielectric With Structured Pores for Interconnect Delay Reduction Y Xiao, Z Ma, C Prawoto, C Zhou, M Chan IEEE Transactions on Electron Devices 67 (5), 2071-2075, 2020 | 8 | 2020 |
| Interconnect technology with h-BN-capped air-gaps C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan IEEE Electron Device Letters 40 (11), 1876-1879, 2019 | 8 | 2019 |
| Synthesis of vertical carbon nanotube interconnect structures using CMOS-compatible catalysts Z Ma, S Zhou, C Zhou, Y Xiao, S Li, M Chan Nanomaterials 10 (10), 1918, 2020 | 7 | 2020 |
| Complementary Two-Dimensional (2-D) FET Technology With MoS2/hBN/Graphene Stack CJ Estrada, Z Ma, M Chan IEEE Electron Device Letters 42 (12), 1890-1893, 2021 | 6 | 2021 |
| A vertically aligned multiwall carbon nanotube-based humidity sensor with fast response, low hysteresis, and high repeatability X Wang, Y Deng, X Chen, Z Ma, Y Wang, W Xu, H Yu IEEE Sensors Letters 5 (11), 1-4, 2021 | 6 | 2021 |
| Air-gap technology with a large void-fraction for global interconnect delay reduction C Prawoto, Z Ma, Y Xiao, S Raju, M Chan IEEE Transactions on Electron Devices 68 (10), 5078-5084, 2021 | 6 | 2021 |
| Image processing with a multi-level ultra-fast three dimensionally integrated perovskite nanowire array S Poddar, Y Zhang, Z Chen, Z Ma, Y Fu, Y Ding, CLJ Chan, Q Zhang, ... Nanoscale Horizons 7 (7), 759-769, 2022 | 5 | 2022 |
| On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors Z Ma, CJ Estrada, K Gong, L Zhang, M Chan Advanced Electronic Materials 8 (10), 2200480, 2022 | 4 | 2022 |
| Complementary Two-Dimensional (2-D) MoS2 FET Technology CJ Estrada, Z Ma, M Chan ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 2 | 2021 |
| Vertically aligned carbon nanotubes for fast humidity sensing ZC Ma, XY Wang, LN Zhang 2020 IEEE 15th International Conference on Nano/Micro Engineered and …, 2020 | 2 | 2020 |
| Current conduction mechanisms in h-BN as a dielectric material Z Ma, CC Prawoto, S Li, Z Ahmed, L Zhang, M Chan 2018 IEEE International Conference on Electron Devices and Solid State …, 2018 | 2 | 2018 |
Mansun ChanChair Professor, HKUSTVerified email at ust.hk
