| Polysilicon TFT technology for active matrix OLED displays M Stewart, RS Howell, L Pires, MK Hatalis IEEE transactions on electron devices 48 (5), 845-851, 2001 | 628 | 2001 |
| A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, B Wagner, MR King, JS Mason, EB Jones, ... IEEE Electron Device Letters 34 (10), 1313-1315, 2013 | 137 | 2013 |
| A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, BP Wagner, MR King, JS Mason, EB Jones, ... 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013 | 106 | 2013 |
| Polysilicon VGA active matrix OLED displays-technology and performance M Stewart, RS Howell, L Pires, MK Hatalis, W Howard, O Prache International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998 | 92 | 1998 |
| 12.5 THz Fco GeTe inline phase-change switch technology for reconfigurable RF and switching applications N El-Hinnawy, P Borodulin, EB Jones, BP Wagner, MR King, JS Mason, ... 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2014 | 79 | 2014 |
| Phase change material switch and method of making the same P Borodulin, NAM El-Hinnawy, RM Young, RS Howell, JR Mason Jr, ... US Patent 9,257,647, 2016 | 77 | 2016 |
| Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials N El-Hinnawy, P Borodulin, BP Wagner, MR King, EB Jones, RS Howell, ... Applied Physics Letters 105 (1), 2014 | 77 | 2014 |
| Poly-Si thin-film transistors on steel substrates RS Howell, M Stewart, SV Kamik, SK Saha, MK Hatalis IEEE Electron Device Letters 21 (2), 70-72, 2000 | 69 | 2000 |
| The super-lattice castellated field effect transistor (SLCFET): A novel high performance transistor topology ideal for RF switching RS Howell, EJ Stewart, R Freitag, J Parke, B Nechay, H Cramer, M King, ... 2014 IEEE International Electron Devices Meeting, 11.5. 1-11.5. 4, 2014 | 56 | 2014 |
| A 10-kV large-area 4H-SiC power DMOSFET with stable subthreshold behavior independent of temperature RS Howell, S Buchoff, S Van Campen, TR McNutt, A Ezis, B Nechay, ... IEEE Transactions on Electron Devices 55 (8), 1807-1815, 2008 | 49 | 2008 |
| The super-lattice castellated field-effect transistor: A high-power, high-performance RF amplifier J Chang, S Afroz, K Nagamatsu, K Frey, S Saluru, J Merkel, S Taylor, ... IEEE Electron Device Letters 40 (7), 1048-1051, 2019 | 46 | 2019 |
| Pocket-pen ultra-high resolution MEMS projection display in combination with on-axis CCD image capture system including means for permitting 3-D imaging HC Nathanson, RS Howell, R Saxena, GA Storaska US Patent 7,164,811, 2007 | 41 | 2007 |
| Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch RM Young, N El-Hinnawy, P Borodulin, BP Wagner, MR King, EB Jones, ... Journal of Applied Physics 116 (5), 2014 | 35 | 2014 |
| Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha, ... IEEE electron device letters 34 (3), 384-386, 2013 | 35 | 2013 |
| Projector pen image stabilization system C Adams, H Nathanson, R Howell, G Storaska, W Hall US Patent App. 11/126,255, 2005 | 35 | 2005 |
| Development of cap-free sputtered GeTe films for inline phase change switch based RF circuits MR King, BP Wagner, EB Jones, N El-Hinnawy, P Borodulin, ... Journal of Vacuum Science & Technology B 32 (4), 2014 | 33 | 2014 |
| Mouse pointing system/icon identification system C Adams, H Nathanson, R Howell US Patent App. 11/130,277, 2005 | 31 | 2005 |
| Low loss, high performance 1-18 GHz SPDT based on the novel super-lattice castellated field effect transistor (SLCFET) RS Howell, EJ Stewart, R Freitag, J Parke, B Nechay, H Cramer, M King, ... 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICs), 1-5, 2014 | 30 | 2014 |
| Investigation of the suitability of 1200-V normally-off recessed-implanted-gate SiC VJFETs for efficient power-switching applications V Veliadis, H Hearne, EJ Stewart, HC Ha, M Snook, T McNutt, R Howell, ... IEEE electron device letters 30 (7), 736-738, 2009 | 30 | 2009 |
| 600-V/2-A symmetrical bi-directional power flow using vertical-channel JFETs connected in common source configuration V Veliadis, D Urciuoli, H Hearne, HC Ha, R Howell, C Scozzie Materials Science Forum 645, 1147-1150, 2010 | 29 | 2010 |
