Benjamin Bruhn
Benjamin Bruhn
Institute of Physics, University of Amsterdam
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Controlled fabrication of individual silicon quantum rods yielding high intensity, polarized light emission
B Bruhn, J Valenta, J Linnros
Nanotechnology 20 (50), 505301, 2009
Blinking statistics of silicon quantum dots
B Bruhn, J Valenta, F Sangghaleh, J Linnros
Nano letters 11 (12), 5574-5580, 2011
Exciton lifetime measurements on single silicon quantum dots
F Sangghaleh, B Bruhn, T Schmidt, J Linnros
Nanotechnology 24 (22), 225204, 2013
Coexistence of 1D and quasi-0D photoluminescence from single silicon nanowires
J Valenta, B Bruhn, J Linnros
Nano letters 11 (7), 3003-3009, 2011
Fabricating single silicon quantum rods for repeatable single dot photoluminescence measurements
B Bruhn, F Sangghaleh, J Linnros
physica status solidi (a) 208 (3), 631-634, 2011
Blinking statistics and excitation-dependent luminescence yield in Si and CdSe nanocrystals
B Bruhn, F Qejvanaj, I Sychugov, J Linnros
The Journal of Physical Chemistry C 118 (4), 2202-2208, 2014
Rapid trapping as the origin of nonradiative recombination in semiconductor nanocrystals
F Pevere, F Sangghaleh, B Bruhn, I Sychugov, J Linnros
ACS Photonics 5 (8), 2990-2996, 2018
Transition from silicon nanowires to isolated quantum dots: Optical and structural evolution
B Bruhn, J Valenta, I Sychugov, K Mitsuishi, J Linnros
Physical Review B 87 (4), 045404, 2013
Multi-chromatic silicon nanocrystals
B Bruhn, BJM Brenny, S Dekker, I Doğan, P Schall, K DohnalovŠ
Light: Science & Applications 6 (6), e17007-e17007, 2017
spectroscopy of carrier multiplication in nanocrystals
B Bruhn, R Limpens, NX Chung, P Schall, T Gregorkiewicz
Scientific Reports 6, 2016
Surface concentration dependent structures of iodine on Pd (110)
M GŲthelid, M Tymczenko, W Chow, S Ahmadi, S Yu, B Bruhn, D Stoltz, ...
The Journal of Chemical Physics 137 (20), 204703, 2012
Strong absorption enhancement in Si nanorods
I Sychugov, F Sangghaleh, B Bruhn, F Pevere, JW Luo, A Zunger, ...
Nano letters 16 (12), 7937-7941, 2016
Polarization of photoluminescence excitation and emission spectra of silicon nanorods within single Si/SiO2 nanowires
J Valenta, B Bruhn, J Linnros
physica status solidi c 8 (3), 1017-1020, 2011
Limits of emission quantum yield determination
B van Dam, B Bruhn, G Dohnal, K DohnalovŠ
AIP advances 8 (8), 085313, 2018
Temporal correlation of blinking events in CdSe/ZnS and Si/SiO2 nanocrystals
B Bruhn, F Qejvanaj, T Gregorkiewicz, J Linnros
Physica B: Condensed Matter 453, 63-67, 2014
Optical absorption cross section and quantum efficiency of a single silicon quantum dot
F Sangghaleh, B Bruhn, I Sychugov, J Linnros
Nanotechnology VI 8766, 876607, 2013
Fabrication and characterization of single luminescing quantum dots from 1D silicon nanostructures
B Bruhn
KTH Royal Institute of Technology, 2012
Quantum yield bias in materials with lower absorptance
B van Dam, B Bruhn, I Kondapaneni, G Dohnal, A Wilkie, J KřivŠnek, ...
Physical Review Applied 12 (2), 024022, 2019
X-ray radiation hardness and influence on blinking in Si and CdSe quantum dots
F Pevere, C von Treskow, E Marino, M Anwar, B Bruhn, I Sychugov, ...
Applied Physics Letters 113 (25), 253103, 2018
Energy Distribution and Exchange Between Spatial Harmonics in Bending Wave Phononic Crystals
B Van Damme, A Zemp
Physical Review Applied 10 (1), 014001, 2018
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