| Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length MV Fischetti, TP O'Regan, S Narayanan, C Sachs, S Jin, J Kim, Y Zhang IEEE Transactions on Electron Devices 54 (9), 2116-2136, 2007 | 143 | 2007 |
| Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors J Kim, MV Fischetti Journal of Applied Physics 108 (1), 2010 | 123 | 2010 |
| Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons MV Fischetti, J Kim, S Narayanan, ZY Ong, C Sachs, DK Ferry, SJ Aboud Journal of Physics: Condensed Matter 25 (47), 473202, 2013 | 102 | 2013 |
| Structural, electronic, and transport properties of silicane nanoribbons J Kim, MV Fischetti, S Aboud Physical Review B 86 (20), 205323, 2012 | 34 | 2012 |
| Ti and NiPt/Ti liner silicide contacts for advanced technologies P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 30 | 2016 |
| Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001],[110], and [111] silicon nanowires J Kim, MV Fischetti Journal of Applied Physics 110 (3), 2011 | 21 | 2011 |
| Semiclassical and quantum electronic transport in nanometer-scale structures: empirical pseudopotential band structure, Monte Carlo simulations and Pauli master equation MV Fischetti, B Fu, S Narayanan, J Kim Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling, 183-247, 2011 | 18 | 2011 |
| Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers Y Zhang, J Kim, MV Fischetti Journal of Computational Electronics 7, 176-180, 2008 | 16 | 2008 |
| Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs J Kim, SA Krishnan, S Narayanan, MP Chudzik, MV Fischetti Microelectronics Reliability 52 (12), 2907-2913, 2012 | 15 | 2012 |
| Specific contact resistivity of n-type Si and Ge MS and MIS contacts J Kim, PJ Oldiges, H Li, H Niimi, M Raymond, P Zeitzoff, V Kamineni, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 8 | 2015 |
| Resonance characteristics through double quantum dots embedded in series in an Aharonov–Bohm ring YS Joe, J Kim, AM Satanin Journal of Physics D: Applied Physics 39 (9), 1766, 2006 | 8 | 2006 |
| Fano Resonance Through Quantum Dots in Tunable Aharonov-Bohm Rings YS Joe, JS Kim, ER Hedin, RM Cosby, AM Satanin Journal of Computational Electronics 4 (1), 129-133, 2005 | 8 | 2005 |
| Flux-dependent anti-crossing of resonances in parallel non-coupled double quantum dots YS Joe, ER Hedin, J Kim Physics Letters A 372 (33), 5488-5491, 2008 | 6 | 2008 |
| Empirical pseudopotential calculation of band structure and deformation potentials of biaxially strained semiconductors J Kim, MV Fischetti 2009 13th International Workshop on Computational Electronics, 1-4, 2009 | 3 | 2009 |
| Electronic and transport properties of armchair and zigzag sp3-hybridized silicane nanoribbons J Kim, MV Fischetti, S Aboud Energy (eV) 1 (2), 3, 0 | 3* | |
| Contact model based on TCAD-experimental interactive algorithm P Feng, J Kim, J Cho, SM Pandey, S Narayanan, M Tng, B Liu, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 2 | 2015 |
| ab-initio study on Schottky-Barrier modulation in NiSi2/Si interface J Kim, B Lee, Y Park, KVRM Murali, F Benistant 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 1 | 2015 |
Shela AboudSr. Research Scientist, Stanford UniversityVerified email at stanford.edu
