Joe Salfi
Joe Salfi
Assistant Professor, University of British Columbia.
Verified email at - Homepage
Cited by
Cited by
Spatially resolving valley quantum interference of a donor in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature materials 13 (6), 605, 2014
Quantum simulation of the Hubbard model with dopant atoms in silicon
J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ...
Nature communications 7, 11342, 2016
Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection
J Salfi, U Philipose, CF De Sousa, S Aouba, HE Ruda
Applied physics letters 89 (26), 2006
Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires
KL Kavanagh, J Salfi, I Savelyev, M Blumin, HE Ruda
Applied Physics Letters 98 (15), 2011
Direct observation of single-charge-detection capability of nanowire field-effect transistors
J Salfi, IG Savelyev, M Blumin, SV Nair, HE Ruda
Nature nanotechnology 5 (10), 737-741, 2010
Roadmap on quantum nanotechnologies
A Laucht, F Hohls, N Ubbelohde, MF Gonzalez-Zalba, DJ Reilly, S Stobbe, ...
Nanotechnology 32 (16), 162003, 2021
Engineering long spin coherence times of spin–orbit qubits in silicon
T Kobayashi, J Salfi, C Chua, J Van Der Heijden, MG House, D Culcer, ...
Nature Materials 20 (1), 38-42, 2021
Spatial metrology of dopants in silicon with exact lattice site precision
M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ...
Nature nanotechnology 11 (9), 763-768, 2016
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits
Z Wang, E Marcellina, AR Hamilton, JH Cullen, S Rogge, J Salfi, D Culcer
npj Quantum Information 7 (1), 54, 2021
Charge-insensitive single-atom spin-orbit qubit in silicon
J Salfi, JA Mol, D Culcer, S Rogge
Physical review letters 116 (24), 246801, 2016
Quantum computing with acceptor spins in silicon
J Salfi, M Tong, S Rogge, D Culcer
Nanotechnology 27 (24), 244001, 2016
Probing the spin states of a single acceptor atom
J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ...
Nano letters 14 (3), 1492-1496, 2014
Electronic properties of quantum dot systems realized in semiconductor nanowires
J Salfi, S Roddaro, D Ercolani, L Sorba, I Savelyev, M Blumin, HE Ruda, ...
Semiconductor Science and Technology 25 (2), 024007, 2010
Quantum computing with acceptor-based qubits
S Rogge, J Salfi, JA Mol
US Patent 9,691,033, 2017
Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition
Z Li, J Salfi, C De Souza, P Sun, SV Nair, HE Ruda
Applied Physics Letters 97 (6), 2010
Valley interference and spin exchange at the atomic scale in silicon
B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ...
Nature communications 11 (1), 6124, 2020
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor
J van der Heijden, T Kobayashi, MG House, J Salfi, S Barraud, ...
Science advances 4 (12), eaat9199, 2018
Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants
JA Mol, J Salfi, JA Miwa, MY Simmons, S Rogge
Physical Review B 87 (24), 245417, 2013
Probing the gate− voltage-dependent surface potential of individual InAs nanowires using random telegraph signals
J Salfi, N Paradiso, S Roddaro, S Heun, SV Nair, IG Savelyev, M Blumin, ...
ACS nano 5 (3), 2191-2199, 2011
Spatially resolved resonant tunneling on single atoms in silicon
B Voisin, J Salfi, J Bocquel, R Rahman, S Rogge
Journal of Physics: Condensed Matter 27 (15), 154203, 2015
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