Joe Salfi

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Sven RoggeProfessor of Physics, University of New South WalesVerified email at unsw.edu.au
Michelle Y. SimmonsDirector, Centre of Excellence for Quantum Computation and Communication TechnologyVerified email at unsw.edu.au
Rajib RahmanAssociate Professor of Physics, University of New South WalesVerified email at unsw.edu.au
Lloyd C. L. HollenbergThomas Baker Chair, School of Physics, University of MelbourneVerified email at unimelb.edu.au
Jan MolProfessor of Physics, Queen Mary University of LondonVerified email at qmul.ac.uk
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
Dimitrie CulcerThe University of New South WalesVerified email at unsw.edu.au
Alex HamiltonProfessor of Physics, UNSWVerified email at unsw.edu.au
Jeffrey McCallumUniversity of MelbourneVerified email at unimelb.edu.au
Brett C JohnsonRMIT UniversityVerified email at rmit.edu.au
Matthew G. HousePsiQuantum Corp.Verified email at psiquantum.com
Jill MiwaAssociate Professor, Aarhus UniversityVerified email at phys.au.dk
Fabio BeltramScuola Normale Superiore, Pisa, ItalyVerified email at sns.it
Stefano RoddaroUniversità di PisaVerified email at unipi.it
Karen L KavanaghSimon Fraser UniversityVerified email at sfu.ca
Sylvain BARRAUDCEA-LETI, Minatec CampusVerified email at cea.fr
Nadine CollaertimecVerified email at imec.be
Belita KoillerInstituto de Física, Universidade Federal do Rio de JaneiroVerified email at if.ufrj.br
Rodrigo B. CapazDirector, Brazilian Nanotechnology National Laboratory (LNNano/CNPEM)Verified email at if.ufrj.br
María José CalderónInstituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones CientíficasVerified email at icmm.csic.es

Joe Salfi

Assistant Professor, University of British Columbia.

Verified email at ece.ubc.ca - Homepage

Quantum Physics Quantum Devices Condensed Matter Physics Quantum Information


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Quantum simulation of the Hubbard model with dopant atoms in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature communications 7, 11342, 2016	123	2016
Spatially resolving valley quantum interference of a donor in silicon J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, ... Nature materials 13 (6), 605, 2014	122	2014
Roadmap on quantum nanotechnologies A Laucht, F Hohls, N Ubbelohde, MF Gonzalez-Zalba, DJ Reilly, S Stobbe, ... Nanotechnology 32 (16), 162003, 2021	96	2021
Electrical properties of Ohmic contacts to ZnSe nanowires and their application to nanowire-based photodetection J Salfi, U Philipose, CF De Sousa, S Aouba, HE Ruda Applied physics letters 89 (26), 2006	93	2006
Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires KL Kavanagh, J Salfi, I Savelyev, M Blumin, HE Ruda Applied Physics Letters 98 (15), 2011	78	2011
Engineering long spin coherence times of spin–orbit qubits in silicon T Kobayashi, J Salfi, C Chua, J Van Der Heijden, MG House, D Culcer, ... Nature Materials 20 (1), 38-42, 2021	76	2021
Direct observation of single-charge-detection capability of nanowire field-effect transistors J Salfi, IG Savelyev, M Blumin, SV Nair, HE Ruda Nature nanotechnology 5 (10), 737-741, 2010	76	2010
Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits Z Wang, E Marcellina, AR Hamilton, JH Cullen, S Rogge, J Salfi, D Culcer npj Quantum Information 7 (1), 54, 2021	68*	2021
Spatial metrology of dopants in silicon with exact lattice site precision M Usman, J Bocquel, J Salfi, B Voisin, A Tankasala, R Rahman, ... Nature nanotechnology 11 (9), 763-768, 2016	68	2016
Charge-insensitive single-atom spin-orbit qubit in silicon J Salfi, JA Mol, D Culcer, S Rogge Physical review letters 116 (24), 246801, 2016	62	2016
Quantum computing with acceptor spins in silicon J Salfi, M Tong, S Rogge, D Culcer Nanotechnology 27 (24), 244001, 2016	56	2016
Probing the spin states of a single acceptor atom J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ... Nano letters 14 (3), 1492-1496, 2014	55	2014
Electronic properties of quantum dot systems realized in semiconductor nanowires J Salfi, S Roddaro, D Ercolani, L Sorba, I Savelyev, M Blumin, HE Ruda, ... Semiconductor Science and Technology 25 (2), 024007, 2010	51	2010
Quantum computing with acceptor-based qubits S Rogge, J Salfi, JA Mol US Patent 9,691,033, 2017	44	2017
Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor J van der Heijden, T Kobayashi, MG House, J Salfi, S Barraud, ... Science advances 4 (12), eaat9199, 2018	40*	2018
Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition Z Li, J Salfi, C De Souza, P Sun, SV Nair, HE Ruda Applied Physics Letters 97 (6), 2010	39	2010
Valley interference and spin exchange at the atomic scale in silicon B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, ... Nature communications 11 (1), 6124, 2020	32	2020
Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants JA Mol, J Salfi, JA Miwa, MY Simmons, S Rogge Physical Review B—Condensed Matter and Materials Physics 87 (24), 245417, 2013	29	2013
Probing the gate− voltage-dependent surface potential of individual InAs nanowires using random telegraph signals J Salfi, N Paradiso, S Roddaro, S Heun, SV Nair, IG Savelyev, M Blumin, ... ACS nano 5 (3), 2191-2199, 2011	29	2011
Two-electron states of a group-V donor in silicon from atomistic full configuration interactions A Tankasala, J Salfi, J Bocquel, B Voisin, M Usman, G Klimeck, ... Physical Review B 97 (19), 195301, 2018	28	2018

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