| 13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V … P Jain, U Arslan, M Sekhar, BC Lin, L Wei, T Sahu, J Alzate-Vinasco, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 212-214, 2019 | 135 | 2019 |
| Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM BJ Choi, ABK Chen, X Yang, IW Chen Advanced Materials 23 (33), 3847-3852, 2011 | 126 | 2011 |
| A size-dependent nanoscale metal–insulator transition in random materials ABK Chen, SG Kim, Y Wang, WS Tung, IW Chen Nature Nanotechnology 6 (4), 237-241, 2011 | 74 | 2011 |
| Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 65 | 2019 |
| A Parallel Circuit Model for Multi‐State Resistive‐Switching Random Access Memory ABK Chen, BJ Choi, X Yang, IW Chen Advanced Functional Materials 22 (3), 546-554, 2012 | 42 | 2012 |
| Demonstration and modeling of multi-bit resistance random access memory X Yang, ABK Chen, B Joon Choi, IW Chen Applied Physics Letters 102 (4), 2013 | 34 | 2013 |
| Cause and prevention of moisture-induced degradation of resistance random access memory nanodevices X Yang, BJ Choi, ABK Chen, IW Chen ACS nano 7 (3), 2302-2311, 2013 | 33 | 2013 |
| Resolving voltage–time dilemma using an atomic-scale lever of subpicosecond electron–phonon interaction X Yang, I Tudosa, BJ Choi, ABK Chen, IW Chen Nano Letters 14 (9), 5058-5067, 2014 | 25 | 2014 |
| eNVM RRAM reliability performance and modeling in 22FFL FinFET technology YF Chang, JA O'Donnell, T Acosta, R Kotlyar, A Chen, PA Quintero, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 12 | 2020 |
| Embedded emerging memory technologies for neuromorphic computing: Temperature instability and reliability YF Chang, I Karpov, R Hopkins, D Janosky, J Medeiros, B Sherrill, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 7 | 2021 |
| Non-volatile resistance-switching thin film devices IW Chen, SG Kim, A Chen, Y Wang US Patent 9,236,118, 2016 | 5 | 2016 |
| Size-dependent metal-insulator transition in Pt-dispersed SiO2 thin film: A candidate for future nonvolatile memory AB Chen Ph. D. Thesis, 117, 2011 | 3 | 2011 |
| Size-dependent metal-insulator transition in platinum-dispersed silicon dioxide thin film: A candidate for future non-volatile memory ABK Chen University of Pennsylvania, 2011 | 1 | 2011 |
| Asymmetric source and drain contacts for a thin film transistor (tft) structure C Tan, VH Le, A Garg, SA Pardaev, JEN Timothy, AA Sharma, ... US Patent App. 17/742,664, 2023 | | 2023 |
| Multi-tier memory structure with graded characteristics AA Sharma, TW LaJoie, F Mahmoudabadi, SK Madisetti, VH Le, ... US Patent App. 17/742,628, 2023 | | 2023 |
| Multi-layered or graded gate dielectric in thin film transistor (tft) structures AA Sharma, AB Chen, M Armstrong, A Sultana, VH Le, TW LaJoie, ... US Patent App. 17/742,656, 2023 | | 2023 |
| Multi-layered source and drain contacts for a thin film transistor (tft) structure AA Sharma, TW LaJoie, VH Le, JEN Timothy, KH Baloch, M Armstrong, ... US Patent App. 17/742,636, 2023 | | 2023 |
| Hybrid etch stop layers D Taneja, TW LaJoie, AA Sharma, GJ George, T Tiasha, H Liu, Y Liu, ... US Patent App. 17/708,051, 2023 | | 2023 |
| Resistive random-access memory devices and methods of fabrication N Strutt, A Chen, P Quintero, O Golonzka US Patent 11,621,395, 2023 | | 2023 |
| Backend memory with air gaps in upper metal layers AA Sharma, AB Chen, W Gomes, F Hamzaoglu, TW LaJoie, VH Le, ... US Patent App. 17/351,301, 2022 | | 2022 |
