Remis Gaska

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Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
Grigory SiminUniversity of South CarolinaVerified email at engr.sc.edu
Max ShatalovCVD Equipment CorporationVerified email at cvdequipment.com
Nezih PalaElectrical & Computer Engineering, Florida International UniversityVerified email at fiu.edu
Juras MickeviciusVilnius UniversityVerified email at ff.vu.lt
Craig MoeAkoustis TechnologiesVerified email at akoustis.com
Saulius Jursenasprofesorius, Vilniaus universitetasVerified email at ff.vu.lt
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences WARSAW POLAND & L2C CNRS Montpellier FRANCEVerified email at umontpellier.fr
Karolis KazlauskasChief Researcher, Vilnius UniversityVerified email at ff.vu.lt
Marcinkevicius SauliusKTH Royal Institute of TechnologyVerified email at kth.se
Ramunas AleksiejunasVilnius UniversityVerified email at ff.vu.lt
Jonas JurkevičiusResearch fellow, Vilnius UniversityVerified email at ff.vu.lt
Thomas M KatonaCalifornia Polytechnic State UniversityVerified email at calpoly.edu
Kai LiuTAECVerified email at taec.toshiba.com
Changqing ChenHuazhong University of Science and TechnologyVerified email at hust.edu.cn
Alok KumarProfessor of Finance, University of MiamiVerified email at miami.edu
Ilesanmi AdesidaUniversity of IllinoisVerified email at nu.edu.kz
Gregory SniderProfessor of Electrical EngineeringVerified email at nd.edu
Alexei O. OrlovResearch Professor of Electrical Engineering, University of Notre DameVerified email at nd.edu
Eric FRAYSSINETIngénieur de Recherche, CNRS-CRHEA, Université Côte d'AzurVerified email at crhea.cnrs.fr

Remis Gaska

UVTON, Inc.

Verified email at uvton.com - Homepage

science


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
de la source Introduction to solid-state lighting A Zukauskas, M Shur, R Gaska distributeur J. Wiley, 2017	943	2017
Nonresonant detection of terahertz radiation in field effect transistors W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ... Journal of Applied Physics 91 (11), 9346-9353, 2002	461	2002
Nonresonant detection of terahertz radiation in field effect transistors LCB W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, MS Shur ... Journal of Applied Physics 91 (11), 9346-9353, 2002	461	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	446	2000
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	440	2012
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur Applied Physics Letters 77 (9), 1339-1341, 2000	415	2000
Self-heating in high-power AlGaN-GaN HFETs R Gaska, A Osinsky, JW Yang, MS Shur IEEE Electron Device Letters 19 (3), 89-91, 1998	344	1998
Deep-ultraviolet light-emitting diodes MS Shur, R Gaska IEEE Transactions on electron devices 57 (1), 12-25, 2009	342	2009
–metal–insulator–semiconductor heterostructure field–effect transistors X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ... Applied Physics Letters 79 (17), 2832-2834, 2001	322	2001
Low noise p-π-n GaN ultraviolet photodetectors A Osinsky, S Gangopadhyay, R Gaska, B Williams, MA Khan, ... Applied Physics Letters 71 (16), 2334-2336, 1997	312	1997
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates R Gaska, JW Yang, A Osinsky, Q Chen, MA Khan, AO Orlov, GL Snider, ... Applied Physics Letters 72 (6), 707-709, 1998	302	1998
White light emitting device and method A Zukauskas, R Gaska, M Shur US Patent 7,095,056, 2006	271	2006
High-temperature performance of AlGaN/GaN HFETs on SiC substrates R Gaska, Q Chen, J Yang, A Osinsky, MA Khan, MS Shur IEEE Electron Device Letters 18 (10), 492-494, 1997	263	1997
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate X Hu, G Simin, J Yang, MA Khan, R Gaska, MS Shur Electronics Letters 36 (8), 753-754, 2000	232	2000
Electron mobility in modulation-doped AlGaN–GaN heterostructures R Gaska, MS Shur, AD Bykhovski, AO Orlov, GL Snider Applied physics letters 74 (2), 287-289, 1999	220	1999
Visible-blind GaN Schottky barrier detectors grown on Si (111) A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, ... Applied Physics Letters 72 (5), 551-553, 1998	205	1998
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ... Applied Physics Letters 84 (23), 4762-4764, 2004	192	2004
Optimization of white polychromatic semiconductor lamps A Žukauskas, R Vaicekauskas, F Ivanauskas, R Gaska, MS Shur Applied Physics Letters 80 (2), 234-236, 2002	191	2002
High power AlGaN ultraviolet light emitters M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ... Semiconductor Science and Technology 29 (8), 084007, 2014	188	2014
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur Applied Physics Letters 80 (6), 977-979, 2002	182	2002

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