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Remis Gaska
Remis Gaska
UVTON, Inc.
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Title
Cited by
Cited by
Year
de la source Introduction to solid-state lighting
A Zukauskas, M Shur, R Gaska
distributeur J. Wiley, 2017
9432017
Nonresonant detection of terahertz radiation in field effect transistors
W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, ...
Journal of Applied Physics 91 (11), 9346-9353, 2002
4612002
Nonresonant detection of terahertz radiation in field effect transistors
LCB W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, MS Shur ...
Journal of Applied Physics 91 (11), 9346-9353, 2002
4612002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur
IEEE Electron Device Letters 21 (2), 63-65, 2000
4462000
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%
M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ...
Applied Physics Express 5 (8), 082101, 2012
4402012
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur
Applied Physics Letters 77 (9), 1339-1341, 2000
4152000
Self-heating in high-power AlGaN-GaN HFETs
R Gaska, A Osinsky, JW Yang, MS Shur
IEEE Electron Device Letters 19 (3), 89-91, 1998
3441998
Deep-ultraviolet light-emitting diodes
MS Shur, R Gaska
IEEE Transactions on electron devices 57 (1), 12-25, 2009
3422009
–metal–insulator–semiconductor heterostructure field–effect transistors
X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ...
Applied Physics Letters 79 (17), 2832-2834, 2001
3222001
Low noise p-π-n GaN ultraviolet photodetectors
A Osinsky, S Gangopadhyay, R Gaska, B Williams, MA Khan, ...
Applied Physics Letters 71 (16), 2334-2336, 1997
3121997
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
R Gaska, JW Yang, A Osinsky, Q Chen, MA Khan, AO Orlov, GL Snider, ...
Applied Physics Letters 72 (6), 707-709, 1998
3021998
White light emitting device and method
A Zukauskas, R Gaska, M Shur
US Patent 7,095,056, 2006
2712006
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
R Gaska, Q Chen, J Yang, A Osinsky, MA Khan, MS Shur
IEEE Electron Device Letters 18 (10), 492-494, 1997
2631997
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
X Hu, G Simin, J Yang, MA Khan, R Gaska, MS Shur
Electronics Letters 36 (8), 753-754, 2000
2322000
Electron mobility in modulation-doped AlGaN–GaN heterostructures
R Gaska, MS Shur, AD Bykhovski, AO Orlov, GL Snider
Applied physics letters 74 (2), 287-289, 1999
2201999
Visible-blind GaN Schottky barrier detectors grown on Si (111)
A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, ...
Applied Physics Letters 72 (5), 551-553, 1998
2051998
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ...
Applied Physics Letters 84 (23), 4762-4764, 2004
1922004
Optimization of white polychromatic semiconductor lamps
A Žukauskas, R Vaicekauskas, F Ivanauskas, R Gaska, MS Shur
Applied Physics Letters 80 (2), 234-236, 2002
1912002
High power AlGaN ultraviolet light emitters
M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ...
Semiconductor Science and Technology 29 (8), 084007, 2014
1882014
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur
Applied Physics Letters 80 (6), 977-979, 2002
1822002
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