khalid hoummada
khalid hoummada
Aix Marseille University
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Cited by
Cited by
Impact of directional walk on atom probe microanalysis
B Gault, F Danoix, K Hoummada, D Mangelinck, H Leitner
Ultramicroscopy 113, 182-191, 2012
Snowplow effect and reactive diffusion in the Pt doped Ni–Si system
O Cojocaru-Mirédin, D Mangelinck, K Hoummada, E Cadel, D Blavette, ...
Scripta materialia 57 (5), 373-376, 2007
Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si
D Mangelinck, K Hoummada, A Portavoce, C Perrin, R Daineche, ...
Scripta Materialia 62 (8), 568-571, 2010
Phase transitions, energy storage performances and electrocaloric effect of the lead-free Ba0. 85Ca0. 15Zr0. 10Ti0. 90O3 ceramic relaxor
Z Hanani, D Mezzane, AG Razumnaya, S Fourcade, Y Gagou, ...
Journal of Materials Science: Materials in Electronics 30 (7), 6430-6438, 2019
Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility
K Hoummada, C Perrin-Pellegrino, D Mangelinck
Journal of Applied Physics 106 (6), 063511, 2009
First stages of the formation of Ni silicide by atom probe tomography
K Hoummada, E Cadel, D Mangelinck, C Perrin-Pellegrino, D Blavette, ...
Applied physics letters 89 (18), 181905, 2006
Nickel segregation on dislocation loops in implanted silicon
K Hoummada, D Mangelinck, B Gault, M Cabie
Scripta Materialia 64 (5), 378-381, 2011
Kinetics of a transient silicide during the reaction of Ni thin film with (100) Si
D Mangelinck, K Hoummada, I Blum
Applied Physics Letters 95 (18), 181902, 2009
Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck
Applied Physics Letters 99 (5), 051911, 2011
Composition measurement of the Ni-silicide transient phase by atom probe tomography
K Hoummada, I Blum, D Mangelinck, A Portavoce
Applied Physics Letters 96 (26), 261904, 2010
Grain-boundary segregation of boron in high-strength steel studied by nano-SIMS and atom probe tomography
G Da Rosa, P Maugis, A Portavoce, J Drillet, N Valle, E Lentzen, ...
Acta Materialia 182, 226-234, 2020
Atom probe tomography for advanced metallization
D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ...
Microelectronic engineering 120, 19-33, 2014
Effect of stress on the transformation of into NiSi
D Mangelinck, K Hoummada
Applied Physics Letters 92 (25), 254101, 2008
Structural, dielectric, and ferroelectric properties of lead-free BCZT ceramics elaborated by low-temperature hydrothermal processing
Z Hanani, D Mezzane, Y Gagou, K Hoummada, C Perrin, AG Razumnaya, ...
Journal of Materials Science: Materials in Electronics 31 (13), 10096-10104, 2020
A methodology for the measurement of the interfacial excess of solute at a grain boundary
P Maugis, K Hoummada
Scripta Materialia 120, 90-93, 2016
Progress in the understanding of Ni silicide formation for advanced MOS structures
D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ...
physica status solidi (a) 211 (1), 152-165, 2014
Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ...
Microelectronic engineering 107, 167-172, 2013
Effect of external stress on the Fe–Cr phase separation in 15-5 PH and Fe–15Cr–5Ni alloys
F Danoix, J Lacaze, A Gibert, D Mangelinck, K Hoummada, E Andrieu
Ultramicroscopy 132, 193-198, 2013
Static and dynamical ageing processes at room temperature in a Fe25Ni0. 4C virgin martensite: effect of C redistribution at the nanoscale
S Allain, F Danoix, M Goune, K Hoummada, D Mangelinck
Philosophical magazine letters 93 (2), 68-76, 2013
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate
F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ...
Scripta Materialia 78, 9-12, 2014
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