Neimantas Vainorius
Neimantas Vainorius
Verified email at ftf.lth.se
Title
Cited by
Cited by
Year
Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors
J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson
Nano letters 13 (4), 1380-1385, 2013
1422013
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
N Vainorius, D Jacobsson, S Lehmann, A Gustafsson, KA Dick, ...
Physical Review B 89 (16), 165423, 2014
702014
Confinement in thickness-controlled GaAs polytype nanodots
N Vainorius, S Lehmann, D Jacobsson, L Samuelson, KA Dick, ME Pistol
Nano letters 15 (4), 2652-2656, 2015
652015
Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System
A Berg, S Yazdi, A Nowzari, K Storm, V Jain, N Vainorius, L Samuelson, ...
Nano letters 16 (1), 656-662, 2016
422016
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
A Berg, S Lehmann, N Vainorius, A Gustafsson, ME Pistol, LR Wallenberg, ...
Journal of crystal growth 386, 47-51, 2014
412014
Growth parameter design for homogeneous material composition in ternary GaxIn1− xP nanowires
A Berg, F Lenrick, N Vainorius, JP Beech, LR Wallenberg, MT Borgström
Nanotechnology 26 (43), 435601, 2015
242015
Wurtzite GaAs quantum wires: one-dimensional subband formation
N Vainorius, S Lehmann, A Gustafsson, L Samuelson, KA Dick, ME Pistol
Nano letters 16 (4), 2774-2780, 2016
222016
Electrical and photoelectrical properties of CuInS2–ZnIn2S4 solid solutions
VV Bozhko, AV Novosad, GE Davidyuk, VR Kozer, OV Parasyuk, ...
Journal of alloys and compounds 553, 48-52, 2013
222013
Sn-seeded GaAs nanowires grown by MOVPE
R Sun, N Vainorius, D Jacobsson, ME Pistol, S Lehmann, KA Dick
Nanotechnology 27 (21), 215603, 2016
132016
Temperature dependent electronic band structure of wurtzite GaAs nanowires
N Vainorius, S Kubitza, S Lehmann, L Samuelson, KA Dick, ME Pistol
Nanoscale 10 (3), 1481-1486, 2018
102018
Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu 1− x Zn x InS 2 alloy
AV Novosad, VV Bozhko, HE Davydyuk, OV Parasyuk, OR Gerasymyk, ...
Semiconductors 48 (3), 286-291, 2014
92014
Realization of ultrahigh quality InGaN platelets to be used as relaxed templates for red micro-LEDs
Z Bi, T Lu, J Colvin, E Sjogren, N Vainorius, A Gustafsson, J Johansson, ...
ACS applied materials & interfaces 12 (15), 17845-17851, 2020
82020
Semiconductor-oxide heterostructured nanowires using postgrowth oxidation
J Wallentin, M Ek, N Vainorious, K Mergenthaler, L Samuelson, ME Pistol, ...
Nano letters 13 (12), 5961-5966, 2013
82013
Growth and properties of the single AgCd2GaSe4 crystals
VV Bozhko, LV Bulatetska, GY Davydyuk, OV Parasyuk, AP Tretyak, ...
Journal of crystal growth 330 (1), 5-8, 2011
72011
Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
K Mergenthaler, N Anttu, N Vainorius, M Aghaeipour, S Lehmann, ...
Nature communications 8 (1), 1-6, 2017
52017
Influence of irradiation by neutrons on the properties of p+–n–n+ Si radiation detectors
V Kalendra, V Kažukauskas, N Vainorius, JV Vaitkus
Physica B: Condensed Matter 404 (23-24), 4664-4666, 2009
42009
Electrical properties and electronic structure of Cu1− xZnxInSe2 and Cu1− xZnxInS2 single crystals
VV Bozhko, AV Novosad, OV Parasyuk, OY Khyzhun, N Vainorius, ...
Journal of Physics and Chemistry of Solids 82, 42-49, 2015
32015
Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons
J Vaitkus, R Bondzinskas, V Kažukauskas, P Malinovskis, A Mekys, ...
Lithuanian Journal of Physics 51 (4), 2011
32011
Long-lasting current transient phenomena in TlBr
V Kažukauskas, A Ziminskij, N Vainorius, V Gostilo, M Shorohov, ...
Acta Physica Polonica A 119 (2), 268-270, 2011
22011
Optical Studies of Polytypism in GaAs Nanowires
N Vainorius
Lund University, 2017
12017
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Articles 1–20