| Study of MOS capacitors with TiO2 and SiO2/TiO2 gate dielectric KF Albertin, MA Valle, I Pereyra Journal of Integrated Circuits and Systems 2 (2), 89-93, 2007 | 64 | 2007 |
| Thin titanium oxide films deposited by e-beam evaporation with additional rapid thermal oxidation and annealing for ISFET applications AD Barros, KF Albertin, J Miyoshi, I Doi, JA Diniz Microelectronic Engineering 87 (3), 443-446, 2010 | 56 | 2010 |
| Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors KF Albertin, I Pereyra Thin Solid Films 517 (16), 4548-4554, 2009 | 38 | 2009 |
| Optimized Ti polishing techniques for enhanced order in TiO2 NT arrays KF Albertin, A Tavares, I Pereyra Applied surface science 284, 772-779, 2013 | 20 | 2013 |
| Study of PECVD SiOxNy films dielectric properties with different nitrogen concentration utilizing MOS capacitors KF Albertin, I Pereyra Microelectronic engineering 77 (2), 144-149, 2005 | 19 | 2005 |
| MOS capacitors with PECVD SiOxNy insulating layer KF Albertin, I Pereyra, MI Alayo Materials Characterization 50 (2-3), 149-154, 2003 | 16 | 2003 |
| Amorphous and excimer laser annealed SiC films for TFT fabrication B Garcia, M Estrada, KF Albertin, MNP Carreno, I Pereyra, L Resendiz Solid-state electronics 50 (2), 241-247, 2006 | 15 | 2006 |
| Photoluminescence in silicon/silicon oxide films produced by the Pulsed Electron Beam Ablation technique M Araya, DE Díaz-Droguett, M Ribeiro, KF Albertin, J Avila, ... Journal of non-crystalline solids 358 (5), 880-884, 2012 | 12 | 2012 |
| Correlation of PECVD SiOxNy dielectric layer structural properties and Si/SiOxNy/Al capacitors interface electrical properties KF Albertin, I Pereyra Journal of non-crystalline solids 352 (9-20), 1438-1443, 2006 | 12 | 2006 |
| Synthesis of lysozyme-reduced graphene oxide films for biosensor applications J Zuñiga, L Akashi, T Pinheiro, M Rivera, L Barreto, KF Albertin, A Champi Diamond and Related Materials 126, 109093, 2022 | 11 | 2022 |
| Estudo de camadas dielétricas para aplicação em capacitores MOS. KF Albertin Universidade de São Paulo, 2007 | 11 | 2007 |
| Low voltage organic devices with high-k tioxny and pmma dielectrics for future application on flexible electronics VR Zanchin, MR Cavallari, FJ Fonseca, KF Albertin, I Pereyra, ... ECS Transactions 39 (1), 455, 2011 | 10 | 2011 |
| Estudo e fabricação de capacitores MOS com camada isolante de SiOxNy depositada por PECVD. KF Albertin Universidade de São Paulo, 2003 | 10 | 2003 |
| Optimized synthesis for improved TiO2 NT array surface PA Marques, KF Albertin, GZ Monteiro, I Pereyra Cerâmica 65, 327-334, 2019 | 9 | 2019 |
| Study of TiO2 and SiO2/TiO2 as Gate Dielectric Maaterials KF Albertin, MA Valle, I Pereyra ECS Transactions 4 (1), 409, 2007 | 9 | 2007 |
| Study of TiO2 nanotubes for sensors and integrated devices KF Albertin, TM Fraga, MZ Mielli, MNP Carreño, I Pereyra Precis. Instrum. Mechanology 2 (3), 114-121, 2013 | 8 | 2013 |
| PECVD silicon oxynitride as insulator for MDMO-PPV thin-film transistors MR Cavallari, KF Albertin, G dos Santos, CAS Ramos, I Pereyra, ... Journal of Integrated Circuits and Systems 5 (2), 116-124, 2010 | 7 | 2010 |
| Improved effective charge density in MOS capacitors with PECVD SiOxNy dielectric layer obtained at low RF power KF Albertin, I Pereyra Journal of non-crystalline solids 354 (19-25), 2646-2651, 2008 | 7 | 2008 |
| Study of metal‐oxide‐semiconductor capacitors with r.f. magnetron sputtering TiOxNy films dielectric layer KF Albertin, I Pereyra physica status solidi c 7 (3‐4), 937-940, 2010 | 6 | 2010 |
| Production of TiO2 Nanotubes and Nanoparticles TM Fraga, I Pereyra, KF Albertin ECS Transactions 39 (1), 131, 2011 | 5 | 2011 |
