Gérard BenAssayag
Gérard BenAssayag
Directeur de Recherche, Université de Toulouse CEMES-CNRS
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Basic mechanisms involved in the Smart-Cut® process
B Aspar, M Bruel, H Moriceau, C Maleville, T Poumeyrol, AM Papon, ...
Microelectronic Engineering 36 (1-4), 233-240, 1997
The generic nature of the Smart-Cut® process for thin film transfer
B Aspar, H Moriceau, E Jalaguier, C Lagahe, A Soubie, B Biasse, ...
Journal of Electronic Materials 30 (7), 834-840, 2001
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ...
Applied Physics Letters 83 (1), 168-170, 2003
In situ high voltage TEM observation of an electrohydrodynamic (EHD) ion source
G Benassayag, P Sudraud, B Jouffrey
Ultramicroscopy 16 (1), 1-8, 1985
Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS
S Schamm, C Bonafos, H Coffin, N Cherkashin, M Carrada, GB Assayag, ...
Ultramicroscopy 108 (4), 346-357, 2008
Amorphization kinetics of germanium during ion implantation
S Koffel, P Scheiblin, A Claverie, G Benassayag
Journal of Applied Physics 105 (1), 013528, 2009
Transient enhanced diffusion of boron in presence of end-of-range defects
C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ...
Journal of applied physics 82 (6), 2855-2861, 1997
Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of …
D Cooper, C Ailliot, JP Barnes, JM Hartmann, P Salles, G Benassayag, ...
Ultramicroscopy 110 (5), 383-389, 2010
Amorphization, recrystallization and end of range defects in germanium
A Claverie, S Koffel, N Cherkashin, G Benassayag, P Scheiblin
Thin Solid Films 518 (9), 2307-2313, 2010
Three dimensional design of silver nanoparticle assemblies embedded in dielectrics for raman spectroscopy enhancement and dark-field imaging
R Carles, C Farcau, C Bonafos, G Benassayag, M Bayle, P Benzo, ...
ACS nano 5 (11), 8774-8782, 2011
End of range defects in Ge
S Koffel, N Cherkashin, F Houdellier, MJ Hytch, G Benassayag, ...
Journal of Applied Physics 105 (12), 126110, 2009
Plasmon-resonant Raman spectroscopy in metallic nanoparticles: Surface-enhanced scattering by electronic excitations
R Carles, M Bayle, P Benzo, G Benassayag, C Bonafos, G Cacciato, ...
Physical Review B 92 (17), 174302, 2015
The synthesis of single layers of Ag nanocrystals by ultra-low-energy ion implantation for large-scale plasmonic structures
R Carles, C Farcău, C Bonafos, G Benassayag, B Pécassou, A Zwick
Nanotechnology 20 (35), 355305, 2009
Si and Ge nanocrystals for future memory devices
C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ...
Materials Science in Semiconductor Processing 15 (6), 615-626, 2012
MOS memory structures by very-low-energy-implanted Si in thin SiO2
P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ...
Materials Science and Engineering: B 101 (1-3), 14-18, 2003
Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon
G Seguini, C Castro, S Schamm-Chardon, G Benassayag, P Pellegrino, ...
Applied Physics Letters 103 (2), 023103, 2013
Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers
M Carrada, N Cherkashin, C Bonafos, G Benassayag, D Chassaing, ...
Materials Science and Engineering: B 101 (1-3), 204-207, 2003
Honeycomb voids due to ion implantation in germanium
RJ Kaiser, S Koffel, P Pichler, AJ Bauer, B Amon, A Claverie, ...
Thin Solid Films 518 (9), 2323-2325, 2010
Assessing bio-available silver released from silver nanoparticles embedded in silica layers using the green algae Chlamydomonas reinhardtii as bio-sensors
A Pugliara, K Makasheva, B Despax, M Bayle, R Carles, P Benzo, ...
Science of the Total Environment 565, 863-871, 2016
Stability of Ag nanocrystals synthesized by ultra-low energy ion implantation in SiO2 matrices
P Benzo, L Cattaneo, C Farcau, A Andreozzi, M Perego, G Benassayag, ...
Journal of Applied Physics 109 (10), 103524, 2011
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