Yuh-Renn Wu
Title
Cited by
Cited by
Year
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
YR Wu, R Shivaraman, KC Wang, JS Speck
Applied Physics Letters 101 (8), 083505, 2012
1172012
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
TJ Yang, R Shivaraman, JS Speck, YR Wu
Journal of Applied Physics 116 (11), 113104, 2014
1132014
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
YR Wu, YY Lin, HH Huang, J Singh
Journal of applied physics 105 (1), 013117, 2009
1112009
Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs
CK Li, YR Wu
IEEE transactions on electron devices 59 (2), 400-407, 2011
1042011
Strain-enhanced photoluminescence from Ge direct transition
TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ...
Applied Physics Letters 96 (21), 211108, 2010
942010
Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment
A Datta, YR Wu, YL Wang
Physical Review B 63 (12), 125407, 2001
792001
Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs
YR Wu, C Chiu, CY Chang, P Yu, HC Kuo
IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1226-1233, 2009
752009
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
JR Lang, NG Young, RM Farrell, YR Wu, JS Speck
Applied Physics Letters 101 (18), 181105, 2012
672012
Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process
HA Chin, IC Cheng, CI Huang, YR Wu, WS Lu, WL Lee, JZ Chen, KC Chiu, ...
Journal of Applied Physics 108 (5), 054503, 2010
652010
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck
Journal of applied physics 115 (19), 193702, 2014
642014
Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors
F Lee, LY Su, CH Wang, YR Wu, J Huang
IEEE Electron Device Letters 36 (3), 232-234, 2015
632015
Device scaling physics and channel velocities in AIGaN/GaN HFETs: Velocities and effective gate length
YR Wu, M Singh, J Singh
IEEE transactions on electron devices 53 (4), 588-593, 2006
622006
+Capacitance-voltage characteristics of heteroepitaxial structures
SY Yang, Q Zhan, PL Yang, MP Cruz, YH Chu, R Ramesh, YR Wu, ...
Applied physics letters 91 (2), 022909, 2007
612007
Influence of polarity on carrier transport in semipolar () and () multiple-quantum-well light-emitting diodes
Y Kawaguchi, CY Huang, YR Wu, Q Yan, CC Pan, Y Zhao, S Tanaka, ...
Applied Physics Letters 100 (23), 231110, 2012
592012
Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics
TG Chen, P Yu, SW Chen, FY Chang, BY Huang, YC Cheng, JC Hsiao, ...
Progress in Photovoltaics: Research and Applications 22 (4), 452-461, 2014
572014
Performance and polarization effects in () long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ...
Applied Physics Letters 101 (12), 121106, 2012
562012
Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance
YR Wu, J Singh
Journal of applied physics 101 (11), 113712, 2007
522007
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ...
Physical Review B 95 (14), 144206, 2017
512017
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures
DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan
Applied Physics Letters 103 (2), 022102, 2013
502013
Study of polarization properties of light emitted from -plane InGaN/GaN quantum well-based light emitting diodes
HH Huang, YR Wu
Journal of Applied Physics 106 (2), 023106, 2009
502009
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Articles 1–20