Sayeef Salahuddin
Sayeef Salahuddin
TSMC Distinguished Professor of Electrical Engineering and Computer Sciences, University of
Verified email at
Cited by
Cited by
Progress, challenges, and opportunities in two-dimensional materials beyond graphene
SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ...
ACS nano 7 (4), 2898-2926, 2013
How Good Can Monolayer MoS2 Transistors Be?
Y Yoon, K Ganapathi, S Salahuddin
Nano letters 11 (9), 3768-3773, 2011
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
S Salahuddin, S Datta
Nano letters 8 (2), 405-410, 2008
Proposal for an all-spin logic device with built-in memory
B Behin-Aein, D Datta, S Salahuddin, S Datta
Nature nanotechnology 5 (4), 266-270, 2010
Room-temperature antiferromagnetic memory resistor
X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ...
Nature materials 13 (4), 367-374, 2014
Deterministic switching of ferromagnetism at room temperature using an electric field
JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ...
Nature 516 (7531), 370-373, 2014
Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure
JT Heron, M Trassin, K Ashraf, M Gajek, Q He, SY Yang, DE Nikonov, ...
Physical review letters 107 (21), 217202, 2011
Memory leads the way to better computing
HSP Wong, S Salahuddin
Nature nanotechnology 10 (3), 191-194, 2015
Negative capacitance in a ferroelectric capacitor
AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ...
Nature materials 14 (2), 182-186, 2015
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
A Islam Khan, D Bhowmik, P Yu, S Joo Kim, X Pan, R Ramesh, ...
Applied Physics Letters 99 (11), 113501, 2011
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
AI Khan, CW Yeung, C Hu, S Salahuddin
2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011
Spin Hall effect clocking of nanomagnetic logic without a magnetic field
D Bhowmik, L You, S Salahuddin
Nature nanotechnology 9 (1), 59-63, 2014
Transport effects on signal propagation in quantum wires
S Salahuddin, M Lundstrom, S Datta
IEEE Transactions on Electron Devices 52 (8), 1734-1742, 2005
Sub-60mV-swing negative-capacitance FinFET without hysteresis
KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ...
2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015
Built-in and induced polarization across LaAlO 3/SrTiO 3 heterojunctions
G Singh-Bhalla, C Bell, J Ravichandran, W Siemons, Y Hikita, ...
Nature Physics 7 (1), 80-86, 2011
Negative capacitance in short-channel FinFETs externally connected to an epitaxial ferroelectric capacitor
AI Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ...
IEEE Electron Device Letters 37 (1), 111-114, 2015
Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy
L You, OJ Lee, D Bhowmik, D Labanowski, J Hong, J Bokor, ...
Proceedings of the National Academy of Sciences 112 (33), 10310-10315, 2015
Non-volatile spin switch for Boolean and non-Boolean logic
S Datta, S Salahuddin, B Behin-Aein
Applied Physics Letters 101 (25), 252411, 2012
A modified a priori SNR for speech enhancement using spectral subtraction rules
MK Hasan, S Salahuddin, MR Khan
IEEE signal processing letters 11 (4), 450-453, 2004
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