Roberto Balboni
Roberto Balboni
Researcher, CNR-IMM Bologna Italy
Adresse e-mail validée de bo.imm.cnr.it
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Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy
V Senez, A Armigliato, I De Wolf, G Carnevale, R Balboni, S Frabboni, ...
Journal of applied physics 94 (9), 5574-5583, 2003
1102003
Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon
GF Cerofolini, L Meda, R Balboni, F Corni, S Frabboni, G Ottaviani, ...
Physical Review B 46 (4), 2061, 1992
1021992
Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices
A Armigliato, R Balboni, GP Carnevale, G Pavia, D Piccolo, S Frabboni, ...
Applied physics letters 82 (13), 2172-2174, 2003
752003
Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography
E Mafakheri, AH Tavabi, PH Lu, R Balboni, F Venturi, C Menozzi, ...
Applied Physics Letters 110 (9), 093113, 2017
582017
Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction
R Balboni, S Frabboni, A Armigliato
Philosophical Magazine A 77 (1), 67-83, 1998
511998
Measuring the orbital angular momentum spectrum of an electron beam
V Grillo, AH Tavabi, F Venturi, H Larocque, R Balboni, GC Gazzadi, ...
Nature Communications 8, 15536, 2017
502017
Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures
A Armigliato, R Balboni, S Frabboni
Applied Physics Letters 86 (6), 063508-063508-3, 2005
472005
Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modeling
I De Wolf, V Senez, R Balboni, A Armigliato, S Frabboni, A Cedola, ...
Microelectronic engineering 70 (2), 425-435, 2003
432003
Hydrogen precipitation in highly oversaturated single‐crystalline silicon
GF Cerofolini, R Balboni, D Bisero, F Corni, S Frabboni, G Ottaviani, ...
physica status solidi (a) 150 (2), 539-586, 1995
401995
Observation of nanoscale magnetic fields using twisted electron beams
V Grillo, TR Harvey, F Venturi, JS Pierce, R Balboni, F Bouchard, ...
Nature Communications 8 (1), 689, 2017
382017
TEM/CBED determination of strain in silicon-based submicrometric electronic devices
A Armigliato, R Balboni, S Balboni, S Frabboni, A Tixier, GP Carnevale, ...
Micron 31 (3), 203-209, 2000
352000
Generation and application of bessel beams in electron microscopy
V Grillo, J Harris, GC Gazzadi, R Balboni, E Mafakheri, MR Dennis, ...
Ultramicroscopy 166, 48-60, 2016
302016
On the assessment of local stress distributions in integrated circuits
J Vanhellemont, I De Wolf, KGF Janssens, S Frabboni, R Balboni, ...
Applied surface science 63 (1-4), 119-125, 1993
301993
Structural and analytical characterization of Si1-x Gex/Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double …
A Armigliato, M Servidori, F Cembali, R Fabbri, R Rosa, F Corticelli, ...
Microscopy Microanalysis Microstructures 3 (4), 363-384, 1992
261992
Particle nucleation in high solids batch miniemulsion polymerization stabilized with a polymeric surfactant
SJ Bohórquez, JM Asua
Journal of Polymer Science Part A: Polymer Chemistry 46 (19), 6407-6415, 2008
232008
Determination of lattice strain in local isolation structures by electron-diffraction techniques and micro-Raman spectroscopy
A Armigliato, R Barboni, I Dewolf, S Frabboni, KGF Janssens, ...
Microscopy of semiconducting materials 134, 229-234, 1993
21*1993
Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high‐order Laue zone line profiles
A Spessot, S Frabboni, R Balboni, A Armigliato
Journal of Microscopy 226 (2), 140-155, 2007
202007
EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon
L Sealy, RC Barklie, G Lulli, R Nipoti, R Balboni, S Milita, M Servidori
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
201995
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon
D Bisero, F Corni, S Frabboni, R Tonini, G Ottaviani, R Balboni
Journal of applied physics 83 (8), 4106-4110, 1998
191998
A comparison between normally and highly accelerated electromigration tests
S Foley, A Scorzoni, R Balboni, M Impronta, I De Munari, A Mathewson, ...
Microelectronics Reliability 38 (6-8), 1021-1027, 1998
181998
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