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Pramod Reddy
Pramod Reddy
Verified email at ncsu.edu
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The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
3612020
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ...
Applied Physics Letters 112 (6), 2018
1282018
On compensation in Si-doped AlN
JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ...
Applied Physics Letters 112 (15), 2018
1252018
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar
Journal of Applied Physics 116 (12), 2014
992014
KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 2015
892015
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (10), 2016
862016
Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN
P Reddy, S Washiyama, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar
Journal of Applied Physics 122 (24), 2017
702017
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ...
Applied Physics Letters 107 (9), 2015
692015
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
P Reddy, MP Hoffmann, F Kaess, Z Bryan, I Bryan, M Bobea, A Klump, ...
Journal of Applied Physics 120 (18), 2016
642016
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ...
Applied Physics Letters 105 (22), 2014
622014
6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation
R Kirste, Q Guo, JH Dycus, A Franke, S Mita, B Sarkar, P Reddy, ...
Applied Physics Express 11 (8), 082101, 2018
572018
The role of chemical potential in compensation control in Si: AlGaN
S Washiyama, P Reddy, B Sarkar, MH Breckenridge, Q Guo, P Bagheri, ...
Journal of Applied Physics 127 (10), 2020
532020
Point-defect nature of the ultraviolet absorption band in AlN
D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ...
Physical Review Applied 9 (5), 054036, 2018
522018
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
P Reddy, B Sarkar, F Kaess, M Gerhold, E Kohn, R Collazo, Z Sitar
Applied Physics Letters 110 (1), 2017
462017
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications
D Alden, W Guo, R Kirste, F Kaess, I Bryan, T Troha, A Bagal, P Reddy, ...
Applied Physics Letters 108 (26), 261106, 2016
442016
High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing
MH Breckenridge, J Tweedie, P Reddy, Y Guan, P Bagheri, D Szymanski, ...
Applied Physics Letters 118 (2), 2021
432021
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
P Reddy, M Hayden Breckenridge, Q Guo, A Klump, D Khachariya, ...
Applied Physics Letters 116 (8), 2020
412020
Schottky contact formation on polar and non-polar AlN
P Reddy, I Bryan, Z Bryan, J Tweedie, R Kirste, R Collazo, Z Sitar
Journal of Applied Physics 116 (19), 2014
402014
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
A Klump, MP Hoffmann, F Kaess, J Tweedie, P Reddy, R Kirste, Z Sitar, ...
Journal of Applied Physics 127 (4), 2020
312020
Design of AlGaN-based quantum structures for low threshold UVC lasers
Q Guo, R Kirste, S Mita, J Tweedie, P Reddy, B Moody, Y Guan, ...
Journal of Applied Physics 126 (22), 2019
312019
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