| Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A Kanjilal, JL Hansen, P Gaiduk, AN Larsen, N Cherkashin, A Claverie, ... Applied Physics Letters 82 (8), 1212-1214, 2003 | 162 | 2003 |
| Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ... Solid-State Electronics 48 (9), 1511-1517, 2004 | 107 | 2004 |
| Implantation and diffusion of phosphorous in germanium A Chroneos, D Skarlatos, C Tsamis, A Christofi, DS McPhail, R Hung Materials science in semiconductor processing 9 (4-5), 640-643, 2006 | 69 | 2006 |
| Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 68 | 2004 |
| Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss N Ioannou, D Skarlatos, C Tsamis, CA Krontiras, SN Georga, A Christofi, ... Applied Physics Letters 93 (10), 2008 | 62 | 2008 |
| MOS memory structures by very-low-energy-implanted Si in thin SiO2 P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ... Materials Science and Engineering: B 101 (1-3), 14-18, 2003 | 49 | 2003 |
| Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ... Microelectronic engineering 73, 730-735, 2004 | 36 | 2004 |
| Estimation of the number of interstitial atoms injected in silicon during thin oxide formation D Skarlatos, M Omri, A Claverie, D Tsoukalas Journal of the Electrochemical Society 146 (6), 2276, 1999 | 29 | 1999 |
| Inert ambient annealing effect on MANOS capacitor memory characteristics N Nikolaou, P Dimitrakis, P Normand, D Skarlatos, K Giannakopoulos, ... Nanotechnology 26 (13), 134004, 2015 | 24 | 2015 |
| ZrO2 and Al2O3 thin films on Ge (100) grown by ALD: An XPS investigation L Sygellou, V Gianneta, N Xanthopoulos, D Skarlatos, S Georga, ... Surface Science Spectra 18 (1), 58-67, 2011 | 24 | 2011 |
| Measurements and analysis of the Epidaurus Ancient Theatre acoustics S Psarras, P Hatziantoniou, M Kountouras, NA Tatlas, JN Mourjopoulos, ... Acta Acustica United with Acustica 99 (1), 30-39, 2013 | 21 | 2013 |
| Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes M Vasilopoulou, S Kennou, S Ladas, SN Georga, M Botzakaki, ... Organic Electronics 14 (1), 312-319, 2013 | 20 | 2013 |
| Interfacial properties of ALD-deposited Al2O3/p-type germanium MOS structures: Influence of oxidized Ge interfacial layer dependent on Al2O3 thickness M Botzakaki, A Kerasidou, L Sygellou, V Ioannou-Sougleridis, ... ECS Solid State Letters 1 (2), P32, 2012 | 20 | 2012 |
| Measurements and analysis of the acoustics of the ancient theatre of Epidaurus S Vassilantonopoulos, P Hatziantoniou, NA Tatlas, T Zakynthinos, ... Proceedings of EAA Conference on the Acoustics of Ancient Theaters, Patras …, 2011 | 18 | 2011 |
| Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, D Tsoukalas, ... Microelectronic engineering 67, 629-634, 2003 | 18 | 2003 |
| Point defect injection during nitrous oxidation of silicon at low temperatures D Skarlatos, D Tsoukalas, LF Giles, A Claverie Journal of Applied Physics 87 (3), 1103-1109, 2000 | 18 | 2000 |
| Strong diffusion suppression of low energy–implanted phosphorous in germanium by N2 co-implantation C Thomidis, M Barozzi, M Bersani, V Ioannou-Sougleridis, NZ Vouroutzis, ... ECS Solid State Letters 4 (6), P47, 2015 | 17 | 2015 |
| Measurement and analysis of acoustics of Epidaurus theatre S Vassilantonopoulos, T Zakynthinos, P Hatziantoniou, NA Tatlas, ... Hellenic Institute of Acoustics Conference, Thessaloniki, 2004 | 17 | 2004 |
| Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients LF Giles, M Omri, B De Mauduit, A Claverie, D Skarlatos, D Tsoukalas, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 16 | 1999 |
| Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy implantation D Skarlatos, E Kapetanakis, P Normand, C Tsamis, M Perego, S Ferrari, ... Journal of applied physics 96 (1), 300-309, 2004 | 15 | 2004 |
