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Daniel M. Fleetwood
Daniel M. Fleetwood
Professor of Electrical Engineering, Vanderbilt University
Verified email at vanderbilt.edu - Homepage
Title
Cited by
Cited by
Year
Radiation effects in MOS oxides
JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ...
IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008
7972008
Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices
DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ...
Journal of Applied Physics 73 (10), 5058-5074, 1993
5361993
'Border traps' in MOS devices
DM Fleetwood
IEEE transactions on nuclear science 39 (2), 269-271, 1992
4321992
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ...
IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994
3591994
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices
DM Fleetwood
IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013
3122013
Physical model for enhanced interface-trap formation at low dose rates
SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ...
IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002
2782002
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
DM Fleetwood, PS Winokur, JR Schwank
IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988
2401988
1/f noise and radiation effects in MOS devices
DM Fleetwood, TL Meisenheimer, JH Scofield
IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994
2331994
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices
MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes
IEEE transactions on nuclear science 38 (6), 1187-1194, 1991
2221991
Charge separation for bipolar transistors
SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ...
IEEE transactions on nuclear science 40 (6), 1276-1285, 1993
2201993
Defect generation by hydrogen at the Si-SiO 2 interface
SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 87 (16), 165506, 2001
2122001
An overview of high-temperature electronic device technologies and potential applications
PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian
IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994
2091994
ELDRS in bipolar linear circuits: A review
RL Pease, RD Schrimpf, DM Fleetwood
2008 European Conference on Radiation and Its Effects on Components and …, 2008
2082008
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous S i O 2
ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides
Physical review letters 89 (28), 285505, 2002
2062002
Border traps: Issues for MOS radiation response and long-term reliability
DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ...
Microelectronics Reliability 35 (3), 403-428, 1995
2051995
Non-volatile memory device based on mobile protons in SiO2 thin films
K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ...
Nature 386 (6625), 587-589, 1997
2001997
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
DM Fleetwood, JH Scofield
Physical review letters 64 (5), 579, 1990
1961990
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
DM Fleetwood, LC Riewe, JR Schwank, SC Witczak, RD Schrimpf
IEEE Transactions on Nuclear Science 43 (6), 2537-2546, 1996
1911996
Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides
DM Fleetwood, NS Saks
Journal of applied physics 79 (3), 1583-1594, 1996
1851996
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002
1832002
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