| High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ... IEEE Electron Device Letters 39 (2), 256-259, 2017 | 64 | 2017 |
| Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation SH Sohel, MW Rahman, A Xie, E Beam, Y Cui, M Kruzich, H Xue, ... IEEE Electron Device Letters 41 (1), 19-22, 2019 | 47 | 2019 |
| X-band power and linearity performance of compositionally graded AlGaN channel transistors SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ... IEEE Electron Device Letters 39 (12), 1884-1887, 2018 | 37 | 2018 |
| Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ... Applied Physics Express 12 (6), 066502, 2019 | 33 | 2019 |
| Polarization engineering of AlGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band applications SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, Y Cao, C Lee, W Lu, ... IEEE Electron Device Letters 40 (4), 522-525, 2019 | 33 | 2019 |
| BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ... Applied Physics Letters 116 (2), 2020 | 28 | 2020 |
| Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ... IEEE Electron Device Letters 41 (5), 677-680, 2020 | 24 | 2020 |
| Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors T Razzak, S Hwang, A Coleman, H Xue, SH Sohel, S Bajaj, Y Zhang, ... Applied Physics Letters 115 (4), 043502, 2019 | 24 | 2019 |
| All MOCVD grown Al0. 7Ga0. 3N/Al0. 5Ga0. 5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors H Xue, S Hwang, T Razzak, C Lee, GC Ortiz, Z Xia, SH Sohel, J Hwang, ... Solid-State Electronics 164, 107696, 2020 | 22 | 2020 |
| Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors MW Rahman, NK Kalarickal, H Lee, T Razzak, S Rajan Applied Physics Letters 119 (19), 2021 | 21 | 2021 |
| RF operation in graded AlxGa1−xN (x = 0.65 to 0.82) channel transistors T Razzak, S Hwang, A Coleman, S Bajaj, H Xue, Y Zhang, ... Electronics Letters 54 (23), 1351-1353, 2018 | 20 | 2018 |
| Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates H Chandrasekar, T Razzak, C Wang, Z Reyes, K Majumdar, S Rajan Advanced Electronic Materials 6 (8), 2000074, 2020 | 17 | 2020 |
| Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance MW Rahman, H Chandrasekar, T Razzak, H Lee, S Rajan Applied Physics Letters 119 (1), 2021 | 11 | 2021 |
| Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, S Campbell, D White, ... Applied Physics Express 13 (3), 036502, 2020 | 11 | 2020 |
| High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V H Xue, K Hussain, V Talesara, T Razzak, M Gaevski, S Mollah, S Rajan, ... physica status solidi (RRL)–Rapid Research Letters 15 (6), 2000576, 2021 | 8 | 2021 |
| High Current Density SmTiO3/SrTiO3 Field-Effect Transistors H Chandrasekar, K Ahadi, T Razzak, S Stemmer, S Rajan ACS Applied Electronic Materials 2 (2), 510-516, 2020 | 8 | 2020 |
| Ultra-wide band gap materials for high frequency applications T Razzak, H Xue, Z Xia, S Hwang, A Khan, W Lu, S Rajan 2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018 | 8 | 2018 |
| Ultra-Wide Bandgap Alx1-xN Channel Transistors T Razzak, S Rajan, A Armstrong Wide Bandgap Semiconductor Electronics And Devices 63, 163, 2019 | 7 | 2019 |
| Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation AM Potts, S Bajaj, DR Daughton, AA Allerman, AM Armstrong, T Razzak, ... IEEE Transactions on Electron Devices 68 (9), 4278-4282, 2021 | 6 | 2021 |
| Wide Bandgap Semiconductor Electronics and Devices U Singisetti, T Razzak, Y Zhang World Scientific, 2019 | 6 | 2019 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
