| Heat-resistant composite material production method and production device T Nakamura, K Hotozuka, Y Fukushima, Y Shimogaki, T Momose, ... US Patent 10,167,549, 2019 | 286 | 2019 |
| Cu wettability and diffusion barrier property of Ru thin film for Cu metallization H Kim, T Koseki, T Ohba, T Ohta, Y Kojima, H Sato, Y Shimogaki Journal of The Electrochemical Society 152 (8), G594, 2005 | 157 | 2005 |
| Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition SW Lim, Y Shimogaki, Y Nakano, K Tada, HKH Komiyama Japanese journal of applied physics 35 (2S), 1468, 1996 | 111 | 1996 |
| Chemical reaction engineering in the design of CVD reactors H Komiyama, Y Shimogaki, Y Egashira Chemical Engineering Science 54 (13-14), 1941-1957, 1999 | 105 | 1999 |
| Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth H Oh, M Sugiyama, Y Shimogaki Japanese journal of applied physics 42 (10R), 6284, 2003 | 71 | 2003 |
| Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy I Waki, C Kumtornkittikul, Y Shimogaki, Y Nakano Applied physics letters 82 (25), 4465-4467, 2003 | 64 | 2003 |
| Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation H Shimizu, K Sakoda, T Momose, M Koshi, Y Shimogaki Journal of Vacuum Science & Technology A 30 (1), 2012 | 62 | 2012 |
| Reduction Mechanism in the Dielectric Constant of Fluorine‐Doped Silicon Dioxide Film SW Lim, Y Shimogaki, Y Nakano, K Tada, H Komiyama Journal of the Electrochemical Society 144 (7), 2531, 1997 | 57 | 1997 |
| Conformal deposition and gap-filling of copper into ultranarrow patterns by supercritical fluid deposition T Momose, M Sugiyama, E Kondoh, Y Shimogaki Applied physics express 1 (9), 097002, 2008 | 56 | 2008 |
| X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films YS Kim, Y Shimogaki Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (5 …, 2001 | 56 | 2001 |
| Atomic layer deposited Co (W) film as a single-layered barrier/liner for next-generation Cu-interconnects H Shimizu, K Sakoda, T Momose, Y Shimogaki Japanese Journal of Applied Physics 51 (5S), 05EB02, 2012 | 54 | 2012 |
| Diffusion barrier property of TiN and TiN/Al/TiN films deposited with FMCVD for Cu interconnection in ULSI YH Shin, Y Shimogaki Science and Technology of Advanced Materials 5 (4), 399, 2004 | 53 | 2004 |
| Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy M Sugiyama, K Kusunoki, Y Shimogaki, S Sudo, Y Nakano, H Nagamoto, ... Applied surface science 117, 746-752, 1997 | 53 | 1997 |
| Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor IT Im, HJ Oh, M Sugiyama, Y Nakano, Y Shimogaki Journal of crystal growth 261 (2-3), 214-224, 2004 | 50 | 2004 |
| CVD of cobalt–tungsten alloy film as a novel copper diffusion barrier H Shimizu, K Sakoda, Y Shimogaki Microelectronic Engineering 106, 91-95, 2013 | 49 | 2013 |
| The Role of Gas‐Phase Reactions during Chemical Vapor Deposition of Copper from (hfac) Cu (tmvs) YK Chae, Y Shimogaki, H Komiyama Journal of The Electrochemical Society 145 (12), 4226, 1998 | 46 | 1998 |
| Changes in orientational polarization and structure of silicon dioxide film by fluorine addition SW Lim, Y Shimogaki, Y Nakano, K Tada, H Komiyama Journal of the Electrochemical Society 146 (11), 4196, 1999 | 43 | 1999 |
| Kinetics of deposition of Cu thin films in supercritical carbon dioxide solutions from a F-free copper (II) β-diketone complex M Matsubara, M Hirose, K Tamai, Y Shimogaki, E Kondoh Journal of the Electrochemical Society 156 (6), H443, 2009 | 41 | 2009 |
| Macro/microcavity method and its application in modeling chemical vapor deposition reaction systems LS Hong, Y Shimogaki, H Komjyama Thin Solid Films 365 (2), 176-188, 2000 | 41 | 2000 |
| Material consideration on Ta, Mo, Ru, and Os as glue layer for ultra large scale integration Cu interconnects H Kim, Y Naito, T Koseki, T Ohba, T Ohta, Y Kojima, H Sato, Y Shimogaki Japanese journal of applied physics 45 (4R), 2497, 2006 | 40 | 2006 |
Masakazu SugiyamaProfessor, Reserach Center for Advanced Science and Technology, The Universiry of TokyoVerified email at ee.t.u-tokyo.ac.jp
