| Method for air gap interconnect integration using photo-patternable low k material LA Clevenger, M Darnon, Q Lin, AD Lisi, SV Nitta US Patent 8,241,992, 2012 | 332 | 2012 |
| Intelligent wireless power charging system L Clevenger, T Dalton, L Hsu, C Radens US Patent 8,024,012, 2011 | 286 | 2011 |
| Nucleation and growth during reactions in multilayer Al/Ni films: The early stage of Al3Ni formation E Ma, CV Thompson, LA Clevenger Journal of applied physics 69 (4), 2211-2218, 1991 | 269 | 1991 |
| Self‐propagating explosive reactions in Al/Ni multilayer thin films E Ma, CV Thompson, LA Clevenger, KN Tu Applied physics letters 57 (12), 1262-1264, 1990 | 264 | 1990 |
| Self-trimming method on looped patterns LA Clevenger, LLC Hsu, JA Mandelman, CJ Radens US Patent 6,632,741, 2003 | 263 | 2003 |
| The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films LA Clevenger, A Mutscheller, JME Harper, C Cabral Jr, K Barmak Journal of Applied Physics 72 (10), 4918-4924, 1992 | 236 | 1992 |
| Fuse processing using dielectric planarization pillars L Clevenger, LLC Hsu, C Narayan, JK Stephens, M Wise US Patent 6,420,216, 2002 | 222 | 2002 |
| Method for maximizing air gap in back end of the line interconnect through via landing modification BD Briggs, LA Clevenger, CJ Penny, M Rizzolo US Patent 9,837,355, 2017 | 217 | 2017 |
| Dual damascene structure and method K Kumar, DC La Tulipe, T Dalton, L Clevenger, A Cowley, E Kaltalioglu, ... US Patent 7,125,792, 2006 | 203 | 2006 |
| High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 179 | 2014 |
| Structure and method for monitoring stress-induced degradation of conductive interconnects K Chanda, B Agarwala, LA Clevenger, AP Cowley, RG Filippi, JP Gill, ... US Patent 7,397,260, 2008 | 170 | 2008 |
| Experimental evidence for nucleation during thin‐film reactions KR Coffey, LA Clevenger, K Barmak, DA Rudman, CV Thompson Applied physics letters 55 (9), 852-854, 1989 | 153 | 1989 |
| Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation RW Mann, GL Miles, TA Knotts, DW Rakowski, LA Clevenger, JME Harper, ... Applied physics letters 67 (25), 3729-3731, 1995 | 147 | 1995 |
| Comparison of high vacuum and ultra‐high‐vacuum tantalum diffusion barrier performance against copper penetration LA Clevenger, NA Bojarczuk, K Holloway, JME Harper, C Cabral Jr, ... Journal of applied physics 73 (1), 300-308, 1993 | 143 | 1993 |
| Chip packaging system and method using deposited diamond film LA Clevenger, LL Hsu, LK Wang, TD Yuan US Patent 6,337,513, 2002 | 137 | 2002 |
| Nucleation‐limited phase selection during reactions in nickel/amorphous‐silicon multilayer thin films LA Clevenger, CV Thompson Journal of applied physics 67 (3), 1325-1333, 1990 | 134 | 1990 |
| Silicides and local interconnections for high-performance VLSI applications RW Mann, LA Clevenger, PD Agnello, FR White IBM Journal of Research and Development 39 (4), 403-417, 1995 | 133 | 1995 |
| Reaction kinetics of nickel/silicon multilayer films LA Clevenger, CV Thompson, RC Cammarata, KN Tu Applied physics letters 52 (10), 795-797, 1988 | 132 | 1988 |
| Explosive silicidation in nickel/amorphous‐silicon multilayer thin films LA Clevenger, CV Thompson, KN Tu Journal of Applied Physics 67 (6), 2894-2898, 1990 | 118 | 1990 |
| Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same L Clevenger, TJ Dalton, L Hsu, C Radens, V Ramachandran, KKH Wong, ... US Patent 7,531,407, 2009 | 116 | 2009 |
