| Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films C Wang, H Jiang, Y Li, X Ma, D Yang Journal of Applied Physics 114 (13), 2013 | 8 | 2013 |
| Optically and electrically pumped random lasing from ZnO films annealed at different temperatures Y Tian, X Ma, L Xiang, MV Ryzhkov, AA Borodkin, SI Rumyantsev, D Yang Optics Communications 285 (24), 5323-5326, 2012 | 6 | 2012 |
| Impurity Engineering of Czochralski Silicon JH Chen, XY Ma, DR Yang Solid State Phenomena 156, 261-267, 2010 | 6 | 2010 |
| Impurity Engineering of Czochralski Silicon JH Chen, XY Ma, DR Yang Solid State Phenomena 156, 261-267, 2010 | 6 | 2010 |
| Electrically pumped random lasing in ZnO-based metal-insulator-semiconductor structured devices: Effect of ZnO film thickness Y Li, C Wang, L Jin, X Ma, D Yang Journal of Applied Physics 113 (21), 2013 | 5 | 2013 |
| Electrically pumped random lasing from the light-emitting device based on two-fold-tandem SiO2/ZnO structure Y Li, C Wang, L Jin, X Ma, D Yang Applied Physics Letters 102 (16), 2013 | 5 | 2013 |
| Electrically pumped wavelength-tunable blue random lasing from CdZnO films on silicon Y Tian, X Ma, L Jin, D Li, D Yang Applied Physics Letters 100 (23), 2012 | 5 | 2012 |
| Room temperature visible electroluminescence from SrTiO3/p+–Si heterostructure Y Yang, H Jiang, X Ma, D Yang Scripta Materialia 69 (10), 748-751, 2013 | 4 | 2013 |
| On The Resistivity Increase of Heavily Doped n-Type Si by Rapid Thermal Processing X Zhang, X Ma, C Gao, T Xu, J Zhao, P Dong, D Yang, J Vanhellemont ECS Transactions 52 (1), 683, 2013 | 4 | 2013 |
| Density functional theory study of the impact of tin doping on oxygen diffusion in Czochralski silicon C Gao, X Ma, D Yang physica status solidi (a) 210 (10), 2199-2203, 2013 | 3 | 2013 |
| Retarded oxygen diffusion in heavily phosphorus-doped Czochralski silicon: experiments and first-principles calculations C Gao, Z Wang, X Liang, D Tian, H Liu, X Ma, D Yang Journal of Physics: Condensed Matter 24 (49), 495802, 2012 | 3 | 2012 |
| Copper precipitation in nitrogen-doped Czochralski silicon W Wang, D Yang, X Ma, D Que Journal of Applied Physics 104 (1), 2008 | 3 | 2008 |
| Electroluminescence from ZnO/n+-Si Heterojunction XY Ma, PL Chen, DS Li, DR Yang Solid State Phenomena 131, 625-628, 2008 | 3 | 2008 |
| An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers T Xu, X Zhang, X Ma, D Yang Materials science in semiconductor processing 16 (3), 893-898, 2013 | 2 | 2013 |
| Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing J Chen, D Yang, X Ma, H Li, L Fu, M Li, D Que Journal of crystal growth 308 (2), 247-251, 2007 | 2 | 2007 |
| Synthesis of one-dimensional chalcogenides by a novel hydrothermal process H Zhang, DR Yang, Y Ji, XY Ma, J Xu, DL Que Solid State Phenomena 99, 203-208, 2004 | 2 | 2004 |
| Microdefects in heavily phosphorus-doped Czochralski silicon ZH Wang, XY Ma, DR Yang Solid State Phenomena 178, 201-204, 2011 | 1 | 2011 |
| On the impact of heavy doping on grown-in defects in Czochralski-grown silicon X Zhang, W Xu, J Chen, X Ma, D Yang, L Gong, D Tian, J Vanhellemont ECS Transactions 34 (1), 1151, 2011 | 1 | 2011 |
| Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon H Wang, D Yang, X Yu, X Ma, D Tian, Y Shen, L Li, D Que Journal of applied physics 96 (5), 3031-3033, 2004 | 1 | 2004 |
| Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon X Wang, D Yang, X Yu, X Ma, D Que MATERIALS SCIENCE AND ENGINEERING-HANGZHOU- 21 (3), 353-355, 2003 | 1 | 2003 |
