Hannah Joyce
TitleCited byYear
Phase perfection in zinc blende and wurtzite III− V nanowires using basic growth parameters
HJ Joyce, J Wong-Leung, Q Gao, HH Tan, C Jagadish
Nano letters 10 (3), 908-915, 2010
4682010
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926, 2007
3312007
Carrier lifetime and mobility enhancement in nearly defect-free core− shell nanowires measured using time-resolved terahertz spectroscopy
P Parkinson, HJ Joyce, Q Gao, HH Tan, X Zhang, J Zou, C Jagadish, ...
Nano letters 9 (9), 3349-3353, 2009
2672009
III–V semiconductor nanowires for optoelectronic device applications
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, J Zou, LM Smith, ...
Progress in Quantum Electronics 35 (2-3), 23-75, 2011
2582011
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
Y Kim, HJ Joyce, Q Gao, HH Tan, C Jagadish, M Paladugu, J Zou, ...
Nano letters 6 (4), 599-604, 2006
2412006
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
A Mishra, LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 91 (26), 263104, 2007
2252007
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
HJ Joyce, CJ Docherty, Q Gao, HH Tan, C Jagadish, J Lloyd-Hughes, ...
Nanotechnology 24 (21), 214006, 2013
2142013
Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires
LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, Y Kim, ...
Applied Physics Letters 89 (17), 173126, 2006
2062006
Unexpected benefits of rapid growth rate for III− V nanowires
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Nano letters 9 (2), 695-701, 2009
1552009
Growth mechanism of truncated triangular III–V nanowires
J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393, 2007
1382007
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
HJ Joyce, J Wong-Leung, CK Yong, CJ Docherty, S Paiman, Q Gao, ...
Nano letters 12 (10), 5325-5330, 2012
1352012
Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition
CJ Docherty, P Parkinson, HJ Joyce, MH Chiu, CH Chen, MY Lee, LJ Li, ...
ACS nano 8 (11), 11147-11153, 2014
1302014
Nearly intrinsic exciton lifetimes in single twin-free core-shell nanowire heterostructures
S Perera, MA Fickenscher, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 93 (5), 053110, 2008
1222008
Extreme sensitivity of graphene photoconductivity to environmental gases
CJ Docherty, CT Lin, HJ Joyce, RJ Nicholas, LM Herz, LJ Li, MB Johnston
Nature communications 3 (1), 1-6, 2012
1172012
High purity GaAs nanowires free of planar defects: growth and characterization
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Advanced Functional Materials 18 (23), 3794-3800, 2008
1152008
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
M Paladugu, J Zou, YN Guo, X Zhang, Y Kim, HJ Joyce, Q Gao, HH Tan, ...
Applied Physics Letters 93 (10), 101911, 2008
1042008
Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures
M Paladugu, J Zou, YN Guo, GJ Auchterlonie, HJ Joyce, Q Gao, ...
Small 3 (11), 1873-1877, 2007
1022007
Super deformability and Young’s modulus of GaAs nanowires
YB Wang, LF Wang, HJ Joyce, Q Gao, XZ Liao, YW Mai, HH Tan, J Zou, ...
Advanced Materials 23 (11), 1356-1360, 2011
982011
Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation
MH Sun, HJ Joyce, Q Gao, HH Tan, C Jagadish, CZ Ning
Nano letters 12 (7), 3378-3384, 2012
882012
Single nanowire photoconductive terahertz detectors
K Peng, P Parkinson, L Fu, Q Gao, N Jiang, YN Guo, F Wang, HJ Joyce, ...
Nano letters 15 (1), 206-210, 2015
802015
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Articles 1–20