Oxygen defects-mediated Z-scheme charge separation in g-C3N4/ZnO photocatalysts for enhanced visible-light degradation of 4-chlorophenol and hydrogen … J Wang, Y Xia, H Zhao, G Wang, L Xiang, J Xu, S Komarneni Applied Catalysis B: Environmental 206, 406-416, 2017 | 71 | 2017 |
Confined Formation of Ultrathin ZnO Nanorods/Reduced Graphene Oxide Mesoporous Nanocomposites for High-Performance Room-Temperature NO2 Sensors Y Xia, J Wang, JL Xu, X Li, D Xie, L Xiang, S Komarneni ACS applied materials & interfaces 8 (51), 35454-35463, 2016 | 53 | 2016 |
Hierarchical ZnO nanosheet-nanorod architectures for fabrication of poly (3-hexylthiophene)/ZnO hybrid NO2 sensor J Wang, X Li, Y Xia, S Komarneni, H Chen, J Xu, L Xiang, D Xie ACS applied materials & interfaces 8 (13), 8600-8607, 2016 | 45 | 2016 |
A wearable and highly sensitive graphene strain sensor for precise home-based pulse wave monitoring T Yang, X Jiang, Y Zhong, X Zhao, S Lin, J Li, X Li, J Xu, Z Li, H Zhu ACS sensors 2 (7), 967-974, 2017 | 37 | 2017 |
Enhanced dielectric and multiferroic properties of single-phase Y and Zr co-doped BiFeO3 ceramics J Xu, D Xie, C Yin, T Feng, X Zhang, G Li, H Zhao, Y Zhao, S Ma, TL Ren, ... Journal of Applied Physics 114 (15), 154103, 2013 | 34 | 2013 |
Reduced graphene oxide/hierarchical flower-like zinc oxide hybrid films for room temperature formaldehyde detection X Li, J Wang, D Xie, J Xu, R Dai, L Xiang, H Zhu, Y Jiang Sensors and Actuators B: Chemical 221, 1290-1298, 2015 | 30 | 2015 |
Scaling-down characteristics of nanoscale diamond-like carbon based resistive switching memories J Xu, D Xie, T Feng, C Zhang, X Zhang, P Peng, D Fu, H Qian, T Ren, ... Carbon 75, 255-261, 2014 | 28 | 2014 |
Influence of La and Mn dopants on the current-voltage characteristics of BiFeO3/ZnO heterojunction J Xu, Z Jia, N Zhang, T Ren Journal of Applied Physics 111 (7), 074101, 2012 | 27 | 2012 |
Freestanding transparent metallic network based ultrathin, foldable and designable supercapacitors YH Liu, JL Xu, X Gao, YL Sun, JJ Lv, S Shen, LS Chen, SD Wang Energy & Environmental Science 10 (12), 2534-2543, 2017 | 22 | 2017 |
MoS 2 Field-Effect Transistors With Lead Zirconate-Titanate Ferroelectric Gating XW Zhang, D Xie, JL Xu, YL Sun, X Li, C Zhang, RX Dai, YF Zhao, XM Li, ... IEEE Electron Device Letters 36 (8), 784-786, 2015 | 20 | 2015 |
Temperature and gate voltage dependent electrical properties of graphene field-effect transistors T Feng, D Xie, G Li, J Xu, H Zhao, T Ren, H Zhu Carbon 78, 250-256, 2014 | 15 | 2014 |
High-performance, ultra-flexible and transparent embedded metallic mesh electrodes by selective electrodeposition for all-solid-state supercapacitor applications YH Liu, JL Xu, S Shen, XL Cai, LS Chen, SD Wang Journal of Materials Chemistry A 5 (19), 9032-9041, 2017 | 14 | 2017 |
Mg-doped Bi0. 8Ca0. 2FeO3 with enhanced ferromagnetic properties J Xu, D Xie, C Yin, T Feng, X Zhang, H Zhao, G Li, TL Ren, Y Guan, X Gao, ... Materials Letters 122, 139-142, 2014 | 14 | 2014 |
Novel Transfer Behaviors in 2D MoS2/WSe2 Heterotransistor and Its Applications in Visible‐Near Infrared Photodetection M Sun, Q Fang, D Xie, Y Sun, J Xu, C Teng, R Dai, P Yang, Z Li, W Li, ... Advanced Electronic Materials 3 (4), 1600502, 2017 | 13 | 2017 |
Back-gate graphene field-effect transistors with double conductance minima T Feng, D Xie, J Xu, H Zhao, G Li, T Ren, H Zhu Carbon 79, 363-368, 2014 | 13 | 2014 |
Ligand-directed rapid formation of ultralong ZnO nanowires by oriented attachment for UV photodetectors J Wang, X Li, C Teng, Y Xia, J Xu, D Xie, L Xiang, S Komarneni Journal of Materials Chemistry C 4 (24), 5755-5765, 2016 | 12 | 2016 |
Temperature-dependent electrical transport properties in graphene/Pb (Zr0. 4Ti0. 6) O3 field effect transistors XW Zhang, D Xie, JL Xu, C Zhang, YL Sun, YF Zhao, X Li, XM Li, HW Zhu, ... Carbon 93, 384-392, 2015 | 11 | 2015 |
Lateral multilayer/monolayer MoS 2 heterojunction for high performance photodetector applications M Sun, D Xie, Y Sun, W Li, C Teng, J Xu Scientific Reports 7 (1), 4505, 2017 | 10 | 2017 |
Pulse widths dependence of programming and erasing behaviors for diamond like carbon based resistive switching memories J Xu, D Xie, C Zhang, X Zhang, P Peng, D Fu, H Qian, T Ren, L Liu Applied Physics Letters 105 (17), 172101, 2014 | 10 | 2014 |
The influence of channel layer thickness on the electrical properties of ZnO TFTs G Li, D Xie, T Feng, J Xu, X Zhang, T Ren Solid-State Electronics 95, 32-35, 2014 | 10 | 2014 |