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Ava Khosravi
Ava Khosravi
Verified email at utdallas.edu
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Cited by
Year
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis
P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ...
2D Materials 5 (3), 031002, 2018
582018
Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ...
Applied Physics Letters 112 (25), 253502, 2018
422018
Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure
P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ...
ACS Applied Electronic Materials 1 (2), 210-219, 2019
322019
Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature
CL Lo, M Catalano, A Khosravi, W Ge, Y Ji, DY Zemlyanov, L Wang, ...
Advanced Materials 31 (30), 1902397, 2019
242019
Atomically Controlled Tunable Doping in High‐Performance WSe2 Devices
CS Pang, TYT Hung, A Khosravi, R Addou, Q Wang, MJ Kim, RM Wallace, ...
Advanced Electronic Materials 6 (8), 1901304, 2020
212020
Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2
A Khosravi, R Addou, CM Smyth, R Yue, CR Cormier, J Kim, CL Hinkle, ...
APL Materials 6 (2), 026603, 2018
212018
Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System
P Zhao, A Padovani, P Bolshakov, A Khosravi, L Larcher, PK Hurley, ...
ACS Applied Electronic Materials 1 (8), 1372-1377, 2019
112019
High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
A Khosravi, R Addou, M Catalano, J Kim, RM Wallace
Materials 12 (7), 1056, 2019
82019
In situ exfoliated 2D molybdenum disulfide analyzed by XPS
X Wang, CR Cormier, A Khosravi, CM Smyth, JR Shallenberger, R Addou, ...
Surface Science Spectra 27 (1), 014019, 2020
72020
Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices With >108 On/Off Ratio
CS Pang, TYT Hung, A Khosravi, R Addou, RM Wallace, Z Chen
IEEE Electron Device Letters 41 (7), 1122-1125, 2020
72020
Investigation of critical interfaces in few-layer MoS2 field effect transistors with high-k dielectrics
CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ...
ECS Transactions 80 (1), 219, 2017
52017
2D topological insulator bismuth selenide analyzed by in situ XPS
X Wang, CM Smyth, A Khosravi, CR Cormier, JR Shallenberger, R Addou, ...
Surface Science Spectra 26 (2), 024014, 2019
12019
Surface and Interface Investigation of Novel Materials for Future Applications in Logic and Memory Devices
A Khosravi
The University of Texas at Dallas, 2020
2020
Contact Engineering for Dual-Gate MoS2 Transistors with O2 Plasma Exposure
P Bolshakov, CM Smyth, A Khosravi, P Zhao, A Azcatl, G Mirabelli, ...
IEEE Semiconductor Interface Specialist Conference (SISC), 2018
2018
Dual-gate MoS₂ transistors with sub-10 nm top-gate high-k dielectrics
P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ...
American Institute of Physics Inc., 2018
2018
Electrical characterization of process induced effects on non-silicon devices
CD Young, P Bolshakov, RA Rodriguez-Davila, P Zhao, A Khosravi, ...
2018 International Conference on IC Design & Technology (ICICDT), 173-176, 2018
2018
Sensitivity of high-k encapsulated MoS2 transistors to I-V measurement execution time
P Bolshakov, A Khosravi, P Zhao, RM Wallace, CD Young, PK Hurley
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
2018
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis
A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, P Zhao, E Caruso, ...
2D Materials, 2018
2018
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