Peter Pichler
Peter Pichler
Fraunhofer IISB
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Cited by
Cited by
Intrinsic point defects, impurities, and their diffusion in silicon
P Pichler
Springer Science & Business Media, 2012
Simulation of critical IC fabrication processes using advanced physical and numerical methods
W Jungling, P Pichler, S Selberherr, E Guerrero, HW Potzl
IEEE Transactions on Electron Devices 32 (2), 156-167, 1985
Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
M Jacob, P Pichler, H Ryssel, R Falster
Journal of applied physics 82 (1), 182-191, 1997
Simulation of critical IC-fabrication steps
P Pichler, W Jungling, S Selberherr, E Guerrero, HP Potzl
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1985
Advanced activation of ultra-shallow junctions using flash-assisted RTP
W Lerch, S Paul, J Niess, S McCoy, T Selinger, J Gelpey, F Cristiano, ...
Materials Science and Engineering: B 124, 24-31, 2005
A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
CJ Ortiz, P Pichler, T Fühner, F Cristiano, B Colombeau, NEB Cowern, ...
Journal of applied physics 96 (9), 4866-4877, 2004
Determination of aluminum diffusion parameters in silicon
O Krause, H Ryssel, P Pichler
Journal of Applied Physics 91 (9), 5645-5649, 2002
Ab Initio Identification of the Nitrogen Diffusion Mechanism in Silicon
N Stoddard, P Pichler, G Duscher, W Windl
Physical review letters 95 (2), 025901, 2005
Current understanding and modeling of Boron-Interstitial Clusters
P Pichler
MRS Online Proceedings Library Archive 717, 2002
Influence of RTP on vacancy concentrations
M Jacob, P Pichler, M Wohs, H Ryssel, R Falster
MRS Online Proceedings Library Archive 490, 1997
Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
B Colombeau, AJ Smith, NEB Cowern, BJ Pawlak, F Cristiano, R Duffy, ...
MRS Online Proceedings Library Archive 810, 2004
Radiation-enhanced diffusion during high-temperature ion implantation
R Schork, P Pichler, A Kluge, H Ryssel
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1991
Honeycomb voids due to ion implantation in germanium
RJ Kaiser, S Koffel, P Pichler, AJ Bauer, B Amon, A Claverie, ...
Thin Solid Films 518 (9), 2323-2325, 2010
Distribution and segregation of arsenic at the interface
C Steen, A Martinez-Limia, P Pichler, H Ryssel, S Paul, W Lerch, L Pei, ...
Journal of Applied Physics 104 (2), 023518, 2008
Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
V Uhnevionak, A Burenkov, C Strenger, G Ortiz, E Bedel-Pereira, V Mortet, ...
IEEE Transactions on Electron Devices 62 (8), 2562-2570, 2015
Diffusion and electrical activation of indium in silicon
S Scalese, M Italia, A La Magna, G Mannino, V Privitera, M Bersani, ...
Journal of applied physics 93 (12), 9773-9782, 2003
Solid State Phenom
R Falster, M Pagani, D Gambaro, M Cornara, M Olmo, G Ferrero, ...
Solid State Phenom. 57, 129, 1997
Anomalous Impurity Segregation and Local Bonding Fluctuation in -Si
G Fisicaro, K Huet, R Negru, M Hackenberg, P Pichler, N Taleb, ...
Physical review letters 110 (11), 117801, 2013
MINIMOS 6 user’s guide
C Fischer, P Habas, O Heinreichsberger, H Kosina, P Lindorfer, P Pichler, ...
Institut für Mikroelektronik, Technische Universität Wien, 1994
Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium
S Koffel, RJ Kaiser, AJ Bauer, B Amon, P Pichler, J Lorenz, L Frey, ...
Microelectronic Engineering 88 (4), 458-461, 2011
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