Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature JF Wang, FF Yan, Q Li, ZH Liu, H Liu, GP Guo, LP Guo, X Zhou, JM Cui, ... Physical review letters 124 (22), 223601, 2020 | 133 | 2020 |
Temperature-dependent energy-level shifts of spin defects in hexagonal boron nitride W Liu, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, ZC Li, NJ Guo, FF Yan, ... ACS Photonics 8 (7), 1889-1895, 2021 | 70 | 2021 |
On-demand generation of single silicon vacancy defects in silicon carbide JF Wang, Q Li, FF Yan, H Liu, GP Guo, WP Zhang, X Zhou, LP Guo, ... Acs Photonics 6 (7), 1736-1743, 2019 | 67 | 2019 |
Generation of spin defects by ion implantation in hexagonal boron nitride NJ Guo, W Liu, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, XD Zeng, FF Yan, ... ACS omega 7 (2), 1733-1739, 2022 | 65 | 2022 |
Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast Q Li, JF Wang, FF Yan, JY Zhou, HF Wang, H Liu, LP Guo, X Zhou, A Gali, ... National Science Review 9 (5), nwab122, 2022 | 63 | 2022 |
Coherent control of defect spins in silicon carbide above 550 K FF Yan, JF Wang, Q Li, ZD Cheng, JM Cui, WZ Liu, JS Xu, CF Li, GC Guo Physical Review Applied 10 (4), 044042, 2018 | 48 | 2018 |
Experimental simulation of anti-parity-time symmetric Lorentz dynamics Q Li, CJ Zhang, ZD Cheng, WZ Liu, JF Wang, FF Yan, ZH Lin, Y Xiao, ... Optica 6 (1), 67-71, 2019 | 46 | 2019 |
High-sensitivity strain sensor with an in-fiber air-bubble Fabry-Perot interferometer K Zhou, MZ Ai, ZH Qian, XX Gao, ZH Hu, Q Li, L Yuan, Z Wang, YF Huang, ... Applied Physics Letters 113 (18), 2018 | 33 | 2018 |
Coherent dynamics of multi-spin V center in hexagonal boron nitride W Liu, V Ivády, ZP Li, YZ Yang, S Yu, Y Meng, ZA Wang, NJ Guo, FF Yan, ... Nature Communications 13 (1), 5713, 2022 | 31 | 2022 |
Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature NJ Guo, S Li, W Liu, YZ Yang, XD Zeng, S Yu, Y Meng, ZP Li, ZA Wang, ... Nature Communications 14 (1), 2893, 2023 | 27 | 2023 |
Room-temperature coherent control of implanted defect spins in silicon carbide FF Yan, AL Yi, JF Wang, Q Li, P Yu, JX Zhang, A Gali, Y Wang, JS Xu, ... npj Quantum Information 6 (1), 38, 2020 | 27 | 2020 |
Experimental optical properties of single nitrogen vacancy centers in silicon carbide at room temperature JF Wang, ZH Liu, FF Yan, Q Li, XG Yang, L Guo, X Zhou, W Huang, JS Xu, ... Acs Photonics 7 (7), 1611-1616, 2020 | 26 | 2020 |
Spin-active defects in hexagonal boron nitride W Liu, NJ Guo, S Yu, Y Meng, ZP Li, YZ Yang, ZA Wang, XD Zeng, LK Xie, ... Materials for Quantum Technology 2 (3), 032002, 2022 | 25 | 2022 |
Optimization of power broadening in optically detected magnetic resonance of defect spins in silicon carbide JF Wang, JM Cui, FF Yan, Q Li, ZD Cheng, ZH Liu, ZH Lin, JS Xu, CF Li, ... Physical Review B 101 (6), 064102, 2020 | 22 | 2020 |
Robust coherent control of solid-state spin qubits using anti-Stokes excitation JF Wang, FF Yan, Q Li, ZH Liu, JM Cui, ZD Liu, A Gali, JS Xu, CF Li, ... Nature communications 12 (1), 3223, 2021 | 21 | 2021 |
Rabi Oscillation of VB-spin in hexagonal boron nitride W Liu, Z Li, Y Yang, S Yu, Y Meng, Z Wang, N Guo, F Yan, Q Li, J Wang, ... arXiv preprint arXiv:2101.11220, 2021 | 20 | 2021 |
Photonic implementation of quantum information masking ZH Liu, XB Liang, K Sun, Q Li, Y Meng, M Yang, B Li, JL Chen, JS Xu, ... Physical Review Letters 126 (17), 170505, 2021 | 17 | 2021 |
Nanoscale depth control of implanted shallow silicon vacancies in silicon carbide Q Li, JF Wang, FF Yan, ZD Cheng, ZH Liu, K Zhou, LP Guo, X Zhou, ... Nanoscale 11 (43), 20554-20561, 2019 | 17 | 2019 |
Degenerate cavity supporting more than 31 Laguerre–Gaussian modes ZD Cheng, ZD Liu, XW Luo, ZW Zhou, J Wang, Q Li, YT Wang, JS Tang, ... Optics letters 42 (10), 2042-2045, 2017 | 16 | 2017 |
Magnetic detection under high pressures using designed silicon vacancy centres in silicon carbide JF Wang, L Liu, XD Liu, Q Li, JM Cui, DF Zhou, JY Zhou, Y Wei, HA Xu, ... Nature Materials 22 (4), 489-494, 2023 | 15 | 2023 |