| Atomic-layer deposition of Lu2O3 G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ... Applied Physics Letters 85 (4), 630-632, 2004 | 136 | 2004 |
| Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ... Materials science in semiconductor processing 11 (5-6), 279-284, 2008 | 108 | 2008 |
| Combining high resolution and tensorial analysis in Raman stress measurements of silicon E Bonera, M Fanciulli, DN Batchelder Journal of applied physics 94 (4), 2729-2740, 2003 | 103 | 2003 |
| Phonon strain shift coefficients in Si1− xGex alloys F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ... Journal of Applied Physics 103 (9), 2008 | 92 | 2008 |
| Energy-band diagram of metal//silicon structures G Seguini, E Bonera, S Spiga, G Scarel, M Fanciulli Applied physics letters 85 (22), 5316-5318, 2004 | 70 | 2004 |
| Dielectric Properties of High- Oxides: Theory and Experiment for E Bonera, G Scarel, M Fanciulli, P Delugas, V Fiorentini Physical review letters 94 (2), 027602, 2005 | 69 | 2005 |
| High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy F Basso Basset, S Bietti, M Reindl, L Esposito, A Fedorov, D Huber, ... Nano letters 18 (1), 505-512, 2018 | 61 | 2018 |
| Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. F Isa, M Salvalaglio, YA Dasilva, M Meduňa, M Barget, A Jung, T Kreiliger, ... Advanced materials (Deerfield Beach, Fla.) 28 (5), 884-888, 2015 | 47 | 2015 |
| Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon E Bonera, M Fanciulli, DN Batchelder Applied Physics Letters 81 (18), 3377-3379, 2002 | 47 | 2002 |
| Band alignment at the La2Hf2O7∕(001) Si interface G Seguini, S Spiga, E Bonera, M Fanciulli, A Reyes Huamantinco, ... Applied physics letters 88 (20), 2006 | 34 | 2006 |
| Raman spectroscopy of strain in subwavelength microelectronic devices E Bonera, M Fanciulli, M Mariani Applied Physics Letters 87 (11), 2005 | 34 | 2005 |
| Crystal defects and junction properties in the evolution of device fabrication technology I Mica, ML Polignano, G Carnevale, P Ghezzi, M Brambilla, F Cazzaniga, ... Journal of Physics: Condensed Matter 14 (48), 13403, 2002 | 34 | 2002 |
| Development of a combined confocal and scanning near‐field Raman microscope for deep UV laser excitation HS Sands, F Demangeot, E Bonera, S Webster, R Bennett, IP Hayward, ... Journal of Raman Spectroscopy 33 (9), 730-739, 2002 | 34 | 2002 |
| Raman efficiency in SiGe alloys A Picco, E Bonera, E Grilli, M Guzzi, M Giarola, G Mariotto, D Chrastina, ... Physical Review B 82 (11), 115317, 2010 | 32 | 2010 |
| Raman stress maps from finite-element models of silicon structures E Bonera, M Fanciulli, G Carnevale Journal of applied physics 100 (3), 2006 | 32 | 2006 |
| Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations E Bonera, F Pezzoli, A Picco, G Vastola, M Stoffel, E Grilli, M Guzzi, ... Physical Review B 79 (7), 075321, 2009 | 31 | 2009 |
| Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies E Bonera, G Scarel, M Fanciulli Journal of non-crystalline solids 322 (1-3), 105-110, 2003 | 31 | 2003 |
| High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots S Bietti, FB Basset, A Tuktamyshev, E Bonera, A Fedorov, S Sanguinetti Scientific Reports 10 (1), 6532, 2020 | 30 | 2020 |
| A novel 0.16 μm—300 V SOIBCD for ultrasound medical applications M Sambi, D Merlini, P Galbiati, E Bonera, F Belletti 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 30 | 2011 |
| Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers M Perego, S Ferrari, S Spiga, E Bonera, M Fanciulli, V Soncini Applied physics letters 82 (1), 121-123, 2003 | 30 | 2003 |
