Gabriel Cadilha Marques
Gabriel Cadilha Marques
Research Group Leader, Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT)
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Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics
G Cadilha Marques, SK Garlapati, S Dehm, S Dasgupta, H Hahn, ...
Applied Physics Letters 111 (10), 2017
Progress report on “from printed electrolyte‐gated metal‐oxide devices to circuits”
G Cadilha Marques, D Weller, AT Erozan, X Feng, M Tahoori, ...
Advanced Materials 31 (26), 1806483, 2019
Electrolyte-gated FETs based on oxide semiconductors: Fabrication and modeling
GC Marques, SK Garlapati, D Chatterjee, S Dehm, S Dasgupta, J Aghassi, ...
IEEE Transactions on Electron Devices 64 (1), 279-285, 2016
Influence of humidity on the performance of composite polymer electrolyte-gated field-effect transistors and circuits
GC Marques, F von Seggern, S Dehm, B Breitung, H Hahn, S Dasgupta, ...
IEEE Transactions on Electron Devices 66 (5), 2202-2207, 2019
Laser printed microelectronics
L Yang, H Hu, A Scholz, F Feist, G Cadilha Marques, S Kraus, ...
Nature Communications 14 (1), 1103, 2023
Inkjet-printed EGFET-based physical unclonable function—Design, evaluation, and fabrication
AT Erozan, GC Marques, MS Golanbari, R Bishnoi, S Dehm, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018
A smooth EKV-based DC model for accurate simulation of printed transistors and their process variations
F Rasheed, MS Golanbari, GC Marques, MB Tahoori, ...
IEEE Transactions on Electron Devices 65 (2), 667-673, 2018
An inkjet-printed low-voltage latch based on inorganic electrolyte-gated transistors
D Weller, GC Marques, J Aghassi-Hagmann, MB Tahoori
IEEE Electron Device Letters 39 (6), 831-834, 2018
High performance printed oxide field-effect transistors processed using photonic curing
SK Garlapati, GC Marques, JS Gebauer, S Dehm, M Bruns, M Winterer, ...
Nanotechnology 29 (23), 235205, 2018
Impact of intrinsic capacitances on the dynamic performance of printed electrolyte-gated inorganic field effect transistors
X Feng, C Punckt, GC Marques, M Hefenbrock, MB Tahoori, ...
IEEE Transactions on Electron Devices 66 (8), 3365-3370, 2019
From silicon to printed electronics: A coherent modeling and design flow approach based on printed electrolyte gated FETs
GC Marques, F Rasheed, J Aghassi-Hagmann, MB Tahoori
2018 23rd Asia and South Pacific Design Automation Conference (ASP-DAC), 658-663, 2018
Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors
J Jeong, GC Marques, X Feng, D Boll, SA Singaraju, J Aghassi‐Hagmann, ...
Advanced Materials Interfaces 6 (21), 1901074, 2019
Inkjet-printed bipolar resistive switching device based on Ag/ZnO/Au structure
H Hu, A Scholz, SA Singaraju, Y Tang, GC Marques, J Aghassi-Hagmann
Applied Physics Letters 119 (11), 2021
Fully printed inverters using metal‐oxide semiconductor and graphene passives on flexible substrates
SA Singaraju, GC Marques, P Gruber, R Kruk, H Hahn, B Breitung, ...
physica status solidi (RRL)–Rapid Research Letters 14 (9), 2000252, 2020
Printed logic gates based on enhancement-and depletion-mode electrolyte-gated transistors
GC Marques, A Birla, A Arnal, S Dehm, E Ramon, MB Tahoori, ...
IEEE Transactions on Electron Devices 67 (8), 3146-3151, 2020
Nonquasi-static capacitance modeling and characterization for printed inorganic electrolyte-gated transistors in logic gates
X Feng, GC Marques, F Rasheed, MB Tahoori, J Aghassi-Hagmann
IEEE Transactions on Electron Devices 66 (12), 5272-5277, 2019
High-entropy materials for energy and electronic applications
S Schweidler, M Botros, F Strauss, Q Wang, Y Ma, L Velasco, ...
Nature Reviews Materials 9 (4), 266-281, 2024
High‐Resolution Capillary Printing of Eutectic Gallium Alloys for Printed Electronics
N Hussain, T Fu, G Marques, C Das, T Scherer, U Bog, L Berner, I Wacker, ...
Advanced Materials Technologies 6 (11), 2100650, 2021
Fabrication and modeling of pn-diodes based on inkjet printed oxide semiconductors
GC Marques, AM Sukuramsyah, AA Rus, S Bolat, A Aribia, X Feng, ...
IEEE Electron Device Letters 41 (1), 187-190, 2019
A fully inkjet-printed unipolar metal oxide memristor for nonvolatile memory in printed electronics
H Hu, A Scholz, Y Liu, Y Tang, GC Marques, J Aghassi-Hagmann
IEEE Transactions on Electron Devices, 2023
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