| Structure and access method for magnetic memory cell and circuit of magnetic memory CC Hung, YH Chen, MJ Kao, YJ Lee, YH Wang US Patent 7,515,458, 2009 | 104 | 2009 |
| Adjacent-reference and self-reference sensing scheme with novel orthogonal wiggle MRAM cell CC Hung, YS Chen, DY Wang, YJ Lee, WC Chen, YH Wang, CT Yen, ... 2006 International electron devices meeting, 1-4, 2006 | 100 | 2006 |
| High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier FJ Hsu, CT Yen, CC Hung, HT Hung, CY Lee, LS Lee, YF Huang, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 77 | 2017 |
| Reduction in critical current density for spin torque transfer switching with composite free layer CT Yen, WC Chen, DY Wang, YJ Lee, CT Shen, SY Yang, CH Tsai, ... Applied Physics Letters 93 (9), 2008 | 54 | 2008 |
| Structure of magnetic memory cell and magnetic memory device YJ Lee, DY Wang, CC Hung US Patent App. 11/964,008, 2009 | 42 | 2009 |
| MRAM defect analysis and fault modeling CL Su, RF Huang, CW Wu, CC Hung, MJ Kao, YJ Chang, WC Wu 2004 International Conferce on Test, 124-133, 2004 | 39 | 2004 |
| Magnetic memory cell and manufacturing method thereof CC Hung, JG Zhu, MJ Kao US Patent App. 11/307,658, 2007 | 35 | 2007 |
| 1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination CT Yen, CC Hung, HT Hung, LS Lee, CY Lee, TM Yang, YF Huang, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 33 | 2015 |
| Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping CT Yen, CC Hung, HT Hung, CY Lee, LS Lee, YF Huang, FJ Hsu Applied Physics Letters 108 (1), 2016 | 31 | 2016 |
| Testing MRAM for write disturbance fault C Su, C Tsai, C Wu, C Hung, Y Chen, M Kao 2006 IEEE International Test Conference, 1-9, 2006 | 30 | 2006 |
| Oxide breakdown reliability of SiC MOSFET CT Yen, HY Lee, CC Hung, CY Lee, LS Lee, FJ Hsu, KT Chu 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2019 | 29 | 2019 |
| Multi-sensing level MRAM structures WC Lin, DD Tang, CC Hung US Patent 7,166,881, 2007 | 29 | 2007 |
| Stepped trench MOSFET and method of fabricating the same CT Yen, CC Hung, YS Chen, CY Lee US Patent 8,841,721, 2014 | 25 | 2014 |
| Large photoinduced ferroelectric coercive field increase and photodefined domain pattern in lithium‐tantalate crystal S Chao, CC Hung Applied physics letters 69 (25), 3803-3805, 1996 | 25 | 1996 |
| Magnetic random access memory with memory cells of different resistances connected in series and parallel CC Hung, MJ Kao, TM Pan US Patent 6,757,189, 2004 | 24 | 2004 |
| Magnetic random access memory with memory cells of different resistances connected in series and parallel CC Hung, MJ Kao, TM Pan US Patent 6,757,189, 2004 | 24 | 2004 |
| Write disturbance modeling and testing for MRAM CL Su, CW Tsai, CW Wu, CC Hung, YS Chen, DY Wang, YJ Lee, MJ Kao IEEE Transactions on Very Large Scale Integration (VLSI) Systems 16 (3), 277-288, 2008 | 21 | 2008 |
| Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier CT Yen, FJ Hsu, CC Hung, CY Lee, LS Lee, YF Li, KT Chu 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 20 | 2018 |
| High density magnetic random access memory CC Hung, MJ Kao, TM Pan US Patent App. 10/421,893, 2004 | 20 | 2004 |
| Silicon carbide semiconductor device CT Yen, CC Hung, CY Lee, LS Lee US Patent 9,246,016, 2016 | 18 | 2016 |
Cheng-Tyng YenFast SiC Semiconductor Inc.Verified email at ntu.edu.tw
