Mohan Kumar
Mohan Kumar
PROFESSOR, EECE DEPARTMENT, SCHOOL OF TECHNOLOGY, GITAM DEEMED TO BE UNIVERSITY,BENGALURU
Verified email at gitam.edu
Title
Cited by
Cited by
Year
Influence of channel and gate engineering on the analog and RF performance of DG MOSFETs
N Mohankumar, B Syamal, CK Sarkar
IEEE transactions on Electron Devices 57 (4), 820-826, 2010
1462010
Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications
N Mohankumar, B Syamal, CK Sarkar
Microelectronics Reliability 49 (12), 1491-1497, 2009
412009
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics
D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar
Microelectronics reliability 53 (3), 499-504, 2013
352013
Influence of barrier thickness on AlInN/GaN underlap DG MOSFET device performance
H Pardeshi, G Raj, S Pati, N Mohankumar, CK Sarkar
Superlattices and Microstructures 60, 47-59, 2013
282013
Nanoscale tri gate MOSFET for ultra low power applications using high-k dielectrics
D Nirmal, PV Kumar, D Joy, BK Jebalin, NM Kumar
2013 IEEE 5th International Nanoelectronics Conference (INEC), 12-19, 2013
272013
Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions
K Koley, B Syamal, A Kundu, N Mohankumar, CK Sarkar
Microelectronics Reliability 52 (11), 2572-2578, 2012
272012
Unique Model of Polarization engineered AlGaN/GaN Based HEMTs for High Power Applications
ND N.Mohankumar, BinolaK.Jebalin, ShobhaRekh, Prajoo.P, Godwinraj.D
Journal of Superlattices and microstructures 78, 210–223, 2015
26*2015
Subthreshold analysis of nanoscale FinFETs for ultra low power application using high-k materials
D Nirmal, P Vijayakumar, PPC Samuel, BK Jebalin, N Mohankumar
International Journal of Electronics 100 (6), 803-817, 2013
252013
The influence of High-k passivation layer on Breakdown voltage of Schottky AlGaN/GaN HEMTs
ND N.Mohankumar, BinolaK.Jebalin, ShobhaRekh, Prajoon.P
Microelectronics Journal 46 (12), 1387–1391, 2015
242015
Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency
HM Pardeshi, G Raj, S Pati, N Mohankumar, CK Sarkar
Superlattices and Microstructures 60, 10-22, 2013
242013
Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET
H Pardeshi, SK Pati, G Raj, N Mohankumar, CK Sarkar
Journal of Semiconductors 33 (12), 124001, 2012
232012
Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET
H Pardeshi, SK Pati, G Raj, N Mohankumar, CK Sarkar
Journal of Semiconductors 33 (12), 124001, 2012
232012
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, CK Sarkar
Solid-state electronics 91, 44-52, 2014
212014
Transistor count optimization of conventional CMOS full adder & optimization of power and delay of new implementation of 18 transistor full adder by dual threshold node design …
S Panda, NM Kumar, CK Sarkar
2009 4th International Conference on Computers and Devices for Communication …, 2009
182009
Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs
SK Pati, K Koley, A Dutta, N Mohankumar, CK Sarkar
Microelectronics Reliability 54 (6-7), 1137-1142, 2014
172014
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high‐k dielectric
D Nirmal, P Vijayakumar, K Shruti, N Mohankumar
International Journal of Circuit Theory and Applications 41 (6), 608-618, 2013
172013
Design of RZF antenna for ECG monitoring using IoT
GP Ramesh, NM Kumar
Multimedia Tools and Applications 79 (5), 4011-4026, 2020
142020
Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
S Baskaran, A Mohanbabu, N Anbuselvan, N Mohankumar, D Godwinraj, ...
Superlattices and Microstructures 64, 470-482, 2013
142013
Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high- power switching boost converter circuits
SKS N. Mohankumar, A.Mohanbabu, D.Godwin raj, Partha Sarkar
Superlattices and Microstructures 103, 270-284, 2017
122017
Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate Metal–Oxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET)
SK Pati, H Pardeshi, G Raj, NM Kumar, CK Sarkar
Superlattices and Microstructures 55, 8-15, 2013
122013
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